Preparation method of vanadium carbide nanosheet

A vanadium carbide nano, self-propagating technology, applied in chemical instruments and methods, carbon compounds, nanotechnology, etc., can solve the problems of high energy consumption, large heating and cooling temperature gradients, dense structure, etc. Good capacitance performance and stable performance

Pending Publication Date: 2021-06-11
YANCHENG INST OF TECH
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  • Description
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  • Application Information

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Problems solved by technology

[0003] Vanadium carbide nanosheets are usually prepared by selectively etching the precursor material V 2 obtained from Al in AlC, while the precursor material V 2 The preparation method of AlC greatly affects the preparation effect of vanadium carbide nanosheets
Currently, the precursor material V 2 The preparation methods of AlC include: self-propagating high-temperature synthesis, pressureless sintering, hot-pressing sintering and other methods. Among them, pressureless sintering needs to be carried out under high temperature conditions, the heating process is slow, high energy consumption, and high cost; the disadvantages of hot-pressing sintering The process and equipment are complicated, the requirements for production control are strict, the requirements for mold materials are high, the energy consumption is large, the production efficiency is low, the production cost is high, and the prepared grains are small and the structure is dense, which is not conducive to the subsequent preparation of vanadium and niobium carbide nanosheets; Self-propagating high-temperature synthesis is a technology that uses the self-heating and self-conduction of high chemical reaction heat between reactants to synthesize materials. Once the reactants are ignited, they will automatically spread to unreacted areas. Until the reaction is complete, the operation is simple, and it can be carried out under low pressure. The combustion wave of the reaction spreads extremely fast, and the chemical energy generated by the combustion reaction is used to synthesize materials. Generally, no additional energy is needed, and the combustion time is short. Heating and cooling during the combustion process The temperature gradient is large, it is easy to form high-concentration defects and non-equilibrium structures, it is easy to obtain complex phases and metastable phases, and it is easy to directly obtain composite materials, but the performance of the precursor material V2AlC synthesized by self-propagating high temperature in the prior art is unstable and the purity is not enough high

Method used

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  • Preparation method of vanadium carbide nanosheet
  • Preparation method of vanadium carbide nanosheet
  • Preparation method of vanadium carbide nanosheet

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Embodiment 1

[0027] A method for preparing vanadium carbide nanosheets, comprising the steps of:

[0028] (1) According to the molar ratio of V powder: Al powder: C powder = 2:1.2:1, take 100 grams of raw material powders, mix them and place them in argon atmosphere for ball milling (the ball-to-material ratio is 6:1, and the ball milling rate is 300r / min, ball milling time is 4h), obtains solid phase powder;

[0029] (2) Put the solid phase powder into a graphite box with carbon cloth on the inner layer and coated with boron nitride on the surface, roll the tungsten wire into a filament shape and put it in the middle of the powder, and put the graphite box into the self-propagating reaction kettle , carry out self-propagating reaction under argon atmosphere, control the argon pressure at 0.3MPa, ignite at high temperature, the ignition time is 2-6s, take it out after the reaction kettle is cooled to room temperature, pulverize the reaction product, and ball mill it under argon atmosphere ...

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Abstract

The invention relates to a preparation method of a vanadium carbide nanosheet, which comprises the following steps: firstly, weighing raw material powder according to the molar ratio of V powder to Al powder to C powder of 2:(1.0-1.2):1, mixing, and ball-milling in an argon atmosphere to obtain solid-phase powder; putting the solid-phase powder into a self-propagating reaction kettle, carrying out a self-propagating reaction in an argon atmosphere, crushing a reaction product, carrying out ball milling in the argon atmosphere, sieving the obtained powder material, taking the powder material of 300-500 meshes, adding the powder material into a hydrofluoric acid solution, carrying out etching while stirring, taking out the powder material after the etching is finished, and washing the powder material with water to neutral to obtain the multilayer vanadium carbide; finally, adding a tetramethylammonium hydroxide solution with the mass concentration of 25% for intercalation, and centrifugally collecting the solid to obtain the vanadium carbide nanosheet. The method is low in energy consumption, safe, environment-friendly, simple and time-saving to operate and low in cost, and the prepared vanadium carbide nanosheet is stable in performance and high in purity, can be used for a supercapacitor electrode material and has good capacitive performance.

Description

technical field [0001] The invention belongs to the technical field of electrode materials, and in particular relates to a preparation method of vanadium carbide nanosheets. Background technique [0002] Vanadium carbide nanosheets (V 2 C) is a new type of two-dimensional metal transition carbide, which has promising applications in many aspects, such as energy storage and conversion, catalysis, sensing, electromagnetics, optics, and water purification, etc. [0003] Vanadium carbide nanosheets are usually prepared by selectively etching the precursor material V 2 obtained from Al in AlC, while the precursor material V 2 The preparation method of AlC greatly affects the preparation effect of vanadium carbide nanosheets. Currently, the precursor material V 2 The preparation methods of AlC include: self-propagating high-temperature synthesis, pressureless sintering, hot-pressing sintering and other methods. Among them, pressureless sintering needs to be carried out under h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/914B82Y40/00H01G11/30
CPCC01B32/914B82Y40/00H01G11/30C01P2004/24C01P2006/40Y02E60/13
Inventor 许剑光刘志勇何世杰李俊昇李波漫姚为
Owner YANCHENG INST OF TECH
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