Preparation method of electrochemical sensor electrode material for detecting aniline

A sensor electrode and electrochemical technology, applied in the direction of material electrochemical variables, gaseous chemical plating, metal material coating technology, etc., can solve the problems of complex coupling and synergistic effects, and achieve large detection range, high detection sensitivity, repeatability The detection effect is stable

Pending Publication Date: 2021-07-16
JILIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Boron-nitrogen co-doped diamond also has good conductivity, and the coupling and synergistic effects of the two doped atoms are complex, and the influence on the electrochemical per

Method used

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  • Preparation method of electrochemical sensor electrode material for detecting aniline
  • Preparation method of electrochemical sensor electrode material for detecting aniline
  • Preparation method of electrochemical sensor electrode material for detecting aniline

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0022] Example 1: Boron, azite to doped with diamond film deposition

[0023] The p-type (100) single crystal silicon wafer was ground by 500 microns of diamond powder for 15 minutes, and then placed in a microwave plasma chemical vapor deposition equipment chamber, boron, nitrogen doped diamond film deposition. The microwave power is 1 kW during the deposition; the gas flow is hydrogen 200 sccm, methane 6Sccm, trimethyl borate 2Sccm, nitrogen 2Sccm; gas pressure 8 kPa, substrate temperature 900 ° C, growth time 6 hours. Scanning electron microscopy shows that boron, nitrogen-doped diamond film, complete, intact, grain size of about 1 to 2 microns (see figure 1 ). Reconsible as sample 1. The sample has good conductive properties to meet electrochemical electrode applications.

Example Embodiment

[0024] Example 2: Boron doped diamond film growth

[0025] The p-type (100) single crystal silicon wafer was ground by a particle diameter of 500 microns for 15 minutes, and then placed in a microwave plasma chemical vapor deposition equipment chamber, a boron doped diamond film deposition was performed. The deposited gas flow is hydrogen 200 sccm, methane 6Sccm, trimethyl borate 2SCCM. Growing pressure 8kpa, substrate temperature 900 ° C, growth time is 6 hours. Scanning electron microscopy shows that the growth of boron doping diamond thin film is tight, complete, grain size of about 2 to 3 microns (see figure 2 ). Reconsible as sample 2. Samples have good conductivity to meet electrochemical electrode applications.

Example Embodiment

[0026] Example 3: Comparison of electrochemical properties of boron doping and boron nitrogen-doped diamond membrane

[0027] Electrochemical electrodes were fabricated using the doped diamond membrane prepared in Example 1 and Example 2, and the electrodes were linearly scanned in a 0.5 m sulfuric acid solution. From test results ( image 3 It can be seen that the boronzapine co-doped diamond electrode potential window is almost as wide as the boron doping diamond electrode, but its reaction current is much larger than the latter. The large reaction current causes the boronzapine co-doped diamond electrode to have higher test sensitivity than the boron doping diamond electrode, so a more excellent sensor performance can be obtained.

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Abstract

The invention relates to a preparation method of an electrochemical sensor electrode material for detecting aniline, and belongs to the technical field of electrochemical sensors, wherein the method comprises the specific steps: by taking a P-type doped monocrystalline silicon wafer as a substrate, treating the surface of the silicon wafer by utilizing micron diamond powder through a manual grinding method or an ultrasonic oscillation method, cleaning by utilizing alcohol, and depositing a boron and nitrogen co-doped diamond film by using a microwave plasma chemical vapor deposition method to obtain the electrochemical sensor electrode material for detecting aniline. The prepared electrode material has good electrochemical performance, the electrode material is used as a working electrode for electrochemical detection of aniline, extremely high detection sensitivity is achieved, meanwhile, the detection range is large, and repeatability is good.

Description

technical field [0001] The invention belongs to the technical field of electrochemical sensors, and relates to a boron and nitrogen co-doped conductive diamond sensor electrode capable of detecting aniline and a preparation method thereof. Background technique [0002] Aniline is an important industrial raw material, widely used in printing and dyeing, dyes, rubber, pharmaceuticals, explosives and pesticides and other industries. It can be absorbed into the body through the skin, respiratory tract and digestive tract and cause damage to the central nervous system of animals. It is highly toxic and highly toxic. The minimum lethal concentration for mice inhaled for 4 hours is 250ppm. In the "Environmental Quality Standards for Surface Water" (GB 3838—2002), the standard limit for aniline is 100 μg / L. At present, the methods for detecting aniline in water mainly include spectrophotometry, liquid chromatography / mass spectrometry, gas chromatography / mass spectrometry, etc. Spe...

Claims

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Application Information

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IPC IPC(8): G01N27/30C23C16/27
CPCG01N27/30C23C16/277C23C16/274
Inventor 李红东李佳翰刘钧松高楠王启亮成绍恒
Owner JILIN UNIV
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