Preparation method of high-performance double-sided heat dissipation gasket for packaging high-power IGBT (insulated gate bipolar transistor) module
A technology of module packaging and double-sided heat dissipation, which is applied in the field of thermal management materials, can solve the problems of difficulty in processing, poor surface treatment effect, and high production cost of double-sided heat dissipation gaskets, and achieve low shear strength and solder wetting The effect of poor performance and low resistance
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[0045] Such as figure 1 with figure 2 As shown, the preparation method of the high-power IGBT module encapsulation of the present embodiment comprises the following steps:
[0046] The first step: preparing an AlSiC raw material ingot with a SiC volume percentage of 55%~68% by spark plasma sintering;
[0047] Step 2: Machining the AlSiC raw material billet, cutting it into a sheet with a set size and a flat surface to obtain the AlSiC matrix material 1, see Figure 5 ;
[0048] Step 3: Clean the AlSiC base material 1 with pure water for the first time and then bake the AlSiC base material 1 for the first time. The first baking is under vacuum or inert gas atmosphere above 250°C for 1 ~3 hours, then wash with pure water to remove impurities and oil stains on the surface of the AlSiC base material 1 and during machining, effectively improving the cleanliness of the surface of the AlSiC base material 1;
[0049] Step 4: Sand blast the surface of the AlSiC base material 1 aft...
Embodiment 1
[0059] The preparation method of the high-performance double-sided heat dissipation gasket for high-power IGBT module packaging of the present embodiment comprises the following steps:
[0060] Step 1: Prepare an AlSiC raw material ingot with a SiC volume percentage of 58% by spark plasma sintering at 590°C and 45MPa. The main materials used are 6061 alloy aluminum powder and spherical silicon carbide powder with a purity greater than or equal to 99.8%;
[0061] Step 2: Machining the AlSiC raw material billet, cutting it into a sheet with a set size and a flat surface to obtain an AlSiC base material 1, preferably a sheet of 100mm*100mm*4mm;
[0062] Step 3: Clean the AlSiC base material 1 with pure water for the first time and then bake the AlSiC base material 1 for the first time. The first baking is in a vacuum environment or an inert gas atmosphere at 300°C for 1 Hours, then wash with pure water to remove impurities and oil stains on the surface of the AlSiC base material ...
Embodiment 2
[0072] After the first sheet is obtained based on the scheme of Example 1, a thickened layer 4 is electroplated on the base layer of the first sheet to obtain the second sheet; the thickened layer 4 is a conductive copper layer with a thickness of 25 μm, which is electrically conductive. The copper layer has good wettability, solderability and electrical conductivity; the current density of electroplating is 2ASD, the temperature is 50°C, the pH is 8.8, and the electroplating solution is potassium pyrophosphate with a concentration of 270g / l. Subsequent steps are the same as in Example 1.
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