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LIG material as well as preparation method and application thereof

A preparation process and precursor technology, which is applied in the field of LIG material preparation, can solve problems such as hindering large-scale production, environmental pollution, and difficulty in forming membranes, etc., to achieve industrial application, simple preparation process, and simple and easy process Effect

Active Publication Date: 2022-05-31
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] (2) Chemical vapor deposition (CVD) on porous substrates can also produce 3D porous graphene, but high temperature conditions and subsequent etching and drying processes may hinder its large-scale production
[0008] The first type is polymer plastic represented by polyimide, which is relatively expensive and easy to pollute the environment;
[0009] The second category is materials rich in cellulose or lignin, which have many disadvantages: low ignition point, flame retardant treatment is often required before laser irradiation; cellulose and lignin have extremely low solubility and are not easy to manufacture film, which limits the application of laser-induced graphene to a certain extent

Method used

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  • LIG material as well as preparation method and application thereof
  • LIG material as well as preparation method and application thereof
  • LIG material as well as preparation method and application thereof

Examples

Experimental program
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Embodiment 1

[0053] This embodiment provides a method for preparing a LIG material, comprising the following steps:

[0054] (1) Weigh 10 grams of chitosan oligosaccharide powder (purchased from McLean, molecular weight less than 3000) and pour it into a beaker, then add 100 milliliters of deionized water, slowly dissolve under the stirring of a magnetic stirrer to obtain a chitosan oligosaccharide solution.

[0055] (2) The beaker containing the chitosan oligosaccharide solution was left to stand for 5 minutes to remove bubbles, to obtain a uniform dark red solution without bubbles.

[0056] (3) Use a pipette to extract about 20 ml of chitosan oligosaccharide solution and transfer it to a plastic circular sample box.

[0057] (4) Transfer the circular sample box containing the chitosan oligosaccharide solution to a vacuum desiccator, and dry it at 70° C. for 72 hours to obtain a chitosan oligosaccharide film sample.

[0058] (5) Use commercial CO 2 The laser induces the reduction of the...

Embodiment 2

[0060] This embodiment provides a preparation method of LIG material, comprising the following steps: adding 1.5 g of cellulose when preparing the chitosan oligosaccharide solution.

[0061] The advantage compared to Example 1 is: (1) oligochitosan can be flame-retardant for cellulose, so that it can be converted into LIG without flame-retardant under normal temperature and pressure air atmosphere, (2) obtain graphene layer number more Less, more conductive.

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Abstract

The invention discloses an LIG material as well as a preparation method and application thereof, and relates to the technical field of carbon materials. The preparation method of the LIG material comprises the following steps: by taking chitosan oligosaccharide as a precursor material, carrying out laser induction on the precursor material to obtain the graphene material. Chitosan oligosaccharide is used as a raw material, the graphene material is prepared by adopting a laser induction method, the required raw material chitosan oligosaccharide powder is green and environment-friendly, the method can be used for preparing a film or mixing other substances for pulping, the preparation process is simple and efficient, the production cost is low, and the method is suitable for mass production of functionalized graphene materials. The prepared LIG material is very wide in application, can be applied to preparation of supercapacitors or sensors, and can also be applied to the field of manufacturing and packaging of advanced semiconductor devices.

Description

technical field [0001] The invention relates to the technical field of carbon materials, in particular to a LIG material, its preparation method and application. Background technique [0002] Graphene is a carbon material with a two-dimensional layered structure. The structure of graphene consists of sp 2 Composed of hybrid carbon atoms, it presents a honeycomb-like two-dimensional plane with regular hexagons. The connection method of carbon atoms in the structure is the same as that of carbon materials such as zero-dimensional fullerene, one-dimensional carbon nanotubes and three-dimensional graphite. Generally speaking, graphene is a single-layer structure, but in practical applications, few-layer graphene often exhibits excellent performance. Therefore, structures with 10 layers or even thicker are collectively referred to as graphene materials in this field. Among these materials, three-dimensional porous graphene has a high surface area while maintaining high electron ...

Claims

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Application Information

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IPC IPC(8): C01B32/184
CPCC01B32/184C01B2204/20Y02E10/549
Inventor 黄乾明叶怀宇杨荟茹
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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