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Organic film-forming material, pattern-forming method, and polymer

A technology of organic film and polymer, which is applied in the field of industry, can solve the problems of damaging etch resistance and cannot avoid the deterioration of etch resistance, and achieve the effect of excellent etch resistance

Pending Publication Date: 2022-07-01
SHIN ETSU CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the resin used for such a material is composed of naphthalene, fluorene, adamantane, etc. with high carbon density as the main skeleton, it cannot avoid the deterioration of etching resistance due to oxygen atoms caused by phenolic hydroxyl groups
[0010] In addition, as the resin for an organic film material that does not contain heteroatoms such as oxygen in order not to impair etching resistance, the resin having a fluorene structure described in Patent Document 6 is exemplified. Compounds and other cross-linking agents are used to form a cured film, so even if the carbon content of the resin is increased, there is a problem that the etching resistance is impaired due to the low carbon content of the cross-linking agent
[0011] Also, in terms of organic film materials for improving etch resistance, there have been researches on organic film materials introduced with a benzopyran structure as shown in Patent Document 7, but for organic film materials such as heat resistance and etch resistance, There is still room for improvement in various required physical properties

Method used

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  • Organic film-forming material, pattern-forming method, and polymer
  • Organic film-forming material, pattern-forming method, and polymer
  • Organic film-forming material, pattern-forming method, and polymer

Examples

Experimental program
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Embodiment

[0289] Hereinafter, the present invention will be described more specifically by showing synthesis examples, examples, and comparative examples, but the present invention is not limited by these. In addition, regarding the molecular weight and the degree of dispersion, the weight average molecular weight (Mw) and the number average molecular weight (Mn) in terms of polystyrene by gel permeation chromatography (GPC) using tetrahydrofuran as the mobile phase were obtained, and The degree of dispersion (Mw / Mn) was obtained.

Synthetic example

[0290] [Synthesis example of polymer for organic film-forming material]

[0291] The following diol compounds (B1) to (B6) and fluorenols were used in the synthesis of the polymers (A1) to (A11) for organic film-forming materials and the compounds (R1) and (R2) for comparative examples. (C1) to (C4), water as a terminal blocking agent, or (D1) to (D3).

[0292] Diol Compounds:

[0293] [Chemical 42]

[0294]

[0295] Fluorenols:

[0296] [Chemical 43]

[0297]

[0298] End capping agent:

[0299] [Chemical 44]

[0300]

Synthetic example 1

[0302] Synthesis of Polymer (A1)

[0303] [Chemical 45]

[0304]

[0305] Under a nitrogen atmosphere, 5.7 g of diol compound (B1), 30.0 g of fluorenols (C1), and 100 g of 1,2-dichloroethane were added, and the mixture was heated to an internal temperature of 50°C to prepare a uniform dispersion. 15.4 g of methanesulfonic acid was gradually added, and the reaction was carried out at an internal temperature of 50° C. for 6 hours, and 2.3 g of pure water was further added, and the reaction was further carried out for 3 hours. After completion of the reaction, the mixture was cooled to room temperature, 200 ml of MIBK (methyl isobutyl ketone) was added, and the mixture was washed 6 times with 100 ml of pure water, and the organic layer was dried under reduced pressure. After adding 100 g of THF to the residue to prepare a homogeneous solution, it was crystallized from 300 g of methanol. The precipitated crystals were separated by filtration, washed twice with 200 g of methan...

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Abstract

The invention relates to an organic film forming material, a pattern forming method and a polymer. The present invention addresses the problem of providing: an organic film-forming material which is capable of exhibiting high etching resistance and excellent distortion resistance without impairing the carbon content of a resin itself; a pattern-forming method using the organic film-forming material; and a polymer suitable for such an organic film-forming material. [Solution] An organic film-forming material characterized by containing (A) a polymer having a repeating unit represented by general formula (1), and (B) an organic solvent, in general formula (1), AR1, AR2, AR3, and AR4 are benzene rings or naphthalene rings, W1 is a tetravalent organic group having 6-70 carbon atoms and having at least one aromatic ring, and W2 is a divalent organic group having 1-50 carbon atoms.

Description

【Technical field】 [0001] The present invention relates to a coating-type organic film-forming material suitable for microfabrication in manufacturing steps of semiconductor elements and the like, and an organic film-forming material suitable for extreme ultraviolet rays, KrF excimer laser light (248 nm), and ArF excimer laser light (193nm), F 2 Laser light (157nm), Kr 2 Laser light (146nm), Ar 2 Patterning methods of laser light (126 nm), extreme ultraviolet (EUV, 13.5 nm), electron beam (EB), and X-ray exposure. 【Background technique】 [0002] In recent years, along with the high integration and high speed of semiconductor elements, the miniaturization of pattern rules has been sought. In lithography using light exposure, which is currently used as a general technique, it is necessary to perform fine and For high-precision pattern processing, various technologies have been developed. [0003] As a light source for lithography used for forming a resist pattern, light exp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/038C08G61/12
CPCG03F7/004G03F7/0384C08G61/12C08G2261/124C08G2261/1424C08G2261/18C08G2261/3142C08G2261/3242G03F7/094C08F38/00G03F7/0002G03F7/0045G03F7/20G03F7/32C08G61/02H01L21/0337C08G65/4081G03F7/11
Inventor 郡大佑橘诚一郎野中汐里荻原勤
Owner SHIN ETSU CHEM CO LTD
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