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Fe3O4 microsphere corn-shaped pyramid structure silicon-based photoelectric composite material and preparation method thereof

A pyramid structure and composite material technology, applied in the direction of electrodes, electrolytic components, electrolytic process, etc., can solve the problems of high overpotential, poor material cycle stability, etc., to reduce reflectivity, reduce photogenerated charge recombination, and enhance light capture effect Effect

Pending Publication Date: 2022-07-08
HUNAN INSTITUTE OF SCIENCE AND TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a Fe 3 o 4 Silicon Wafer Fe with Corn-like Pyramid Structure Modified and Etched by Nanospheres 3 o 4 @SiMPs composite photoelectric material and its preparation method to solve the problems of high overpotential and poor cycle stability of materials for photocatalytic decomposition of water to produce hydrogen (oxygen)

Method used

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  • Fe3O4 microsphere corn-shaped pyramid structure silicon-based photoelectric composite material and preparation method thereof
  • Fe3O4 microsphere corn-shaped pyramid structure silicon-based photoelectric composite material and preparation method thereof
  • Fe3O4 microsphere corn-shaped pyramid structure silicon-based photoelectric composite material and preparation method thereof

Examples

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Embodiment 1

[0027] (1) The single crystal silicon wafer was cut into 1.5cm×1.5cm, ultrasonically cleaned in acetone, ethanol, and purified water for 10 minutes respectively, and then placed in HNO with a substance ratio of 4:1 3 and KMnO 4 Soak the mixed solution at room temperature for 26 minutes, and then wash with pure water; (2) Put the single crystal silicon wafer after the treatment in step (1) in a 5% hydrofluoric acid solution for 2 minutes to remove the oxide on the surface, and then use Clean with pure water; (3) Put the single crystal silicon wafer after cleaning in step (2) into a pre-cleaning solution (aqueous solution containing NaOH and oxidant) for 5 minutes, and then clean with pure water; (4) Put step (3) The pre-cleaned silicon wafers are placed in the texturing solution (containing NaOH and a specially formulated additive aqueous solution) for texturing for 8 minutes, and then washed with pure water; (5) The silicon wafers after texturing in step (4) are placed in The...

Embodiment 2

[0029] (1) Cut the single-crystal silicon wafer into 1.5cm×1.5cm, ultrasonically clean each in acetone, ethanol, and pure water for 10 minutes, and then place them in HCl and H with a substance ratio of 5:1. 2 O 2 Soak the mixed solution at room temperature for 28 minutes, and then wash with pure water; (2) Put the single crystal silicon wafer after the treatment in step (1) in a 5% hydrofluoric acid solution for 2 minutes to remove the oxide on the surface, and then use Clean with pure water; (3) Put the single crystal silicon wafer after cleaning in step (2) into a pre-cleaning solution (aqueous solution containing NaOH and oxidant) for 5 min, and then clean with pure water; (4) Put step (3) The pre-cleaned silicon wafers in step (4) were placed in the texturing solution (containing NaOH and a specially formulated additive aqueous solution) for texturing for 7 min, and then washed with pure water; (5) The silicon wafers after texturing in step (4) were placed in It was wash...

Embodiment 3

[0031] (1) Cut the single-crystal silicon wafer into 1.5cm×1.5cm, ultrasonically clean each in acetone, ethanol, and pure water for 10 minutes, and then place them in H with a substance ratio of 3:1. 2 SO 4 and H 2 O 2 Soak the mixed solution at room temperature for 25 minutes, and then wash with pure water; (2) Put the single crystal silicon wafer after the treatment in step (1) in a 5% hydrofluoric acid solution for 2 minutes to remove the oxide on the surface, and then use Clean with pure water; (3) Put the single crystal silicon wafer after cleaning in step (2) into a pre-cleaning solution (aqueous solution containing NaOH and oxidant) for 5 min, and then clean with pure water; (4) Put step (3) The pre-cleaned silicon wafers in step (4) were placed in the texturing solution (aqueous solution containing NaOH and special formula additives) for texturing for 6 min, and then washed with pure water; (5) The silicon wafers after texturing in step (4) were placed in Washed wit...

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Abstract

The invention discloses a preparation method of a Fe3O4-coated SiMPs photoelectric composite material with iron oxide nanospheres deposited on a silicon wafer in a corn-shaped arrangement pyramid structure, and the preparation method specifically comprises the following steps: cutting a monocrystalline silicon wafer into square blocks, carrying out ultrasonic cleaning, soaking the square blocks in a mixed solution of inorganic acid and an oxidizing agent, and soaking the soaked square blocks in a 5% HF solution; putting the cleaned silicon wafer into a pre-cleaning solution for cleaning, putting the silicon wafer into a texturing solution for texturing, then cleaning the silicon wafer with mixed acid liquor, and drying to obtain the pyramid structure silicon wafer with the surface arranged in a corn shape; the method comprises the following steps: weighing Fe2 (SO4) 3, an iron ion complexing agent and a weak reducing agent, putting into an alcoholic solution, uniformly mixing, transferring into a high-pressure reaction kettle together with a texturing silicon wafer, reacting for several hours at a certain temperature, and naturally cooling for later use; after a sample is subjected to temperature programming roasting, the PEC efficiency of the composite material is 20 times higher than that of planar silicon, and the composite material has high and stable photocurrent density. The method has the characteristics of simple process, mild reaction conditions, and obviously improved electrochemical performance and stability of the product.

Description

technical field [0001] The invention relates to a solvothermal reaction deposition of Fe on the surface of a bract-shaped pyramid structure silicon wafer 3 O 4 Nanosphere composite optoelectronic material and preparation method, in particular to etching silicon wafers with pyramidal structures arranged in bracts on the surface of single crystal silicon by wet chemical alkali solution method, and using Fe 2 (SO 4 ) 3 Deposition of Fe on silicon wafers by solvothermal conditions as iron source 3 O 4 Nanospheres, the obtained precursor is calcined at a temperature-programmed temperature in the desired atmosphere to obtain Fe 3 O 4 The @SiMPs optoelectronic composite material exhibits good photoelectrocatalytic water splitting performance and electrochemical stability. Background technique [0002] Photoelectrochemical (PEC) water splitting provides a promising new way to solve the energy crisis and environmental pollution caused by the depletion of traditional fossil fue...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/091C25B1/04
CPCC25B11/091C25B1/04Y02P70/50
Inventor 张丽陈婉君程龙孙祥杨海华邓小梅钟卓阎建辉
Owner HUNAN INSTITUTE OF SCIENCE AND TECHNOLOGY
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