Schottky diode based on n-type gallium oxide-p-type diamond and preparation method thereof

Abstract

The invention relates to a Schottky diode based on n-type gallium oxide-p-type diamond and a preparation method of the Schottky diode. The Schottky diode comprises an n-type gallium oxide substrate, an n-type gallium oxide epitaxial layer, a p-type diamond junction region, an anode, an insulating medium and a cathode. The cathode, the n-type gallium oxide substrate and the n-type gallium oxide epitaxial layer are stacked in sequence; the p-type diamond junction region is distributed in the surface layer of the n-type gallium oxide epitaxial layer to form a terminal structure; the anode is positioned on the n-type gallium oxide epitaxial layer, and two end parts of the anode are partially overlapped with the p-type diamond junction region respectively; the insulating medium is located on the n-type gallium oxide epitaxial layer and makes contact with the two ends of the anode. According to the diode, the problems that a gallium oxide-based Schottky barrier diode is low in reverse bias, large in reverse leakage current and obvious in heat effect, and an electric field near a heterogeneous Schottky junction is concentrated are solved, and larger power capacity and higher device reliability are obtained.

Description

technical field [0001] The invention belongs to the field of microelectronics, and in particular relates to a Schottky diode based on n-type gallium oxide-p-type diamond and a preparation method thereof. Background technique [0002] The development of power electronic devices has been more than ten years, and the research on new power devices and related semiconductor materials has continuously promoted the development of power devices in the direction of high voltage, large electric field and low power consumption. The application of semiconductor materials has gradually changed from the first generation of silicon-based semiconductors to include silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga 2 O 3 ) and third-generation semiconductor materials such as diamond. [0003] Compared with the previous two generations of semiconductors, Ga 2 O 3 The material has the advantages of wider forbidden band width, higher thermal conductivity, and larger breakdown f...

AI Technical Summary

Problems solved by technology

[0005] However, the current commercial gallium oxide material β-Ga 2 o 3 research focused on the growth of materials, β-Ga 2 o 3 The material has a high effective mass of holes, and it is very easy to introduce donor levels such as oxygen vacancies and defects, so even undoped gallium oxide materials will exhibit the conductivity characteristics of n-type materials, so high-quality p-type Ga 2 o 3 It is still quite difficult to prepare

At the same time, limited by the Schottky barrier diode's low barrier height, thin reverse barrier, and easy breakdown on its surface, its reverse breakdown voltage is relatively low, and its reverse leakage current is large. The leakage current will increase sharply with the rise of temperature, and the poor thermal conductivity of SBD will also reduce the reliability of the device in a more harsh environment

[0006] To sum up, the current GaO Schottky diodes have the problems of low reverse bias voltage, large reverse leakage, obvious thermal effect, and difficult preparation of p-type materials, which leads to reduced reliability of the device.

Images