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Method for preparing high purity silicon carbide sintered body using high purity solid carbon material as main material by silicon blending and composition

A technology of high-purity silicon carbide and carbon materials, applied in the field of preparation methods and compositions of equipment parts, to achieve the effects of increasing strength and chemical corrosion resistance, increasing density, and fast processing speed

Inactive Publication Date: 2005-03-02
西安希朗材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Impurities are easily introduced during processing

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The method for preparing a high-purity silicon carbide sintered body through silicon infiltration based on high-purity solid carbon materials is carried out according to the following steps:

[0023] a, take by weight 92% of carbon black.

[0024] b. Add 3% of thermosetting resin binder epoxy resin and 1% of lubricant machine oil to carbon black, put them into a mechanical mixer and stir and mix for 5 hours to make the raw materials fully uniform;

[0025] c. Put the stirred mixture into a mold for molding; the shape and size of the mold are determined by the product requirements, and molds of any shape and size can be made.

[0026] d. Put the semi-finished blanks formed by the product into the drying kiln and slowly raise the temperature to 160°C for solidification; dry and solidify for 20 hours;

[0027] e. The semi-finished product after mechanical processing is soaked in hydrochloric acid for 1 hour, and then cleaned with deionized water to remove surface adsorpti...

Embodiment 2

[0032] a, take high-purity graphite 93% by mass ratio;

[0033] b. Add 4% thermosetting adhesive phenolic resin and 3% vegetable oil to the high-purity graphite. Put it into a mechanical mixer and stir and mix for 5 hours to make the raw materials fully uniform;

[0034] c. Put the stirred mixture into the mould;

[0035] d. The semi-finished blanks formed by the product are put into the drying kiln and slowly heated to 180°C for solidification. Dry and cure for 30 hours;

[0036] e. The plain embryo is punched and grooved according to the size with a tool on a precision machine tool;

[0037] f. Soak the processed semi-finished product in hydrofluoric acid for 2 hours, and then wash it with deionized water to remove the surface adsorption impurities during processing;

[0038] g. Firing in an intermediate frequency induction furnace, the purity of the lower layer of the plain embryo is greater than 99% silicon grains, the particle size of the silicon grains is 0.5mm, and ...

Embodiment 3

[0042] Realize the composition of preparing high-purity silicon carbide sintered body by siliconizing the high-purity solid-state carbon material described in claim 1, including the described silicon carbide and free silicon, and silicon carbide accounts for 95% by mass ratio, Free silicon accounts for 5%. Carbon black 92% in the formula, the described thermosetting resin adhesive epoxy resin is 7% by mass ratio, the described lubricant is engine oil and is 1% by mass ratio, and the silicon grains of the lower layer are plain embryos 2.70 times the weight. The preparation method is the same as in Example 1.

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Abstract

The preparation process of high purity SiC sintering body includes the steps of: weighing composition, mechanically stirring, forming inside mold, stoving and curing, machining, soaking in acid mixture, washing with deionized water, eliminating surface adsorbed impurity, infiltrating Si particle and sintering in high temperature kiln, acid pickling, and vacuum packing. The material includes high purity solid carbon material, adhesive, lubricant and high purity silicon grain. The present invention has the features of low production cost, no opened air hole, chemical corrosion resistance, etc. and may be used in making semiconductor device with line width below 0.13 micron as well as in making diffusion tube, crystal boat, template wafer, etc.

Description

technical field [0001] The invention relates to a preparation method and composition of equipment parts used in oxidation, diffusion and LPCVD processes of semiconductor devices. Background technique [0002] At present, silicon carbide components used in the manufacturing process of semiconductor devices have defects such as difficult molding and processing, high content of free silicon in components, low content and purity of silicon carbide, low material strength, and resistance to chemical corrosion. Commonly used methods include silicon carbide, organic silicon, organic carbon, and inorganic carbon mixed casting. High cost, difficult to form, high energy consumption during firing. Such as related US patents: (1) 6699411 March 2, 2004 Odaka, etal. First, silicon carbide powder is prepared by mixing high-purity silicon polymers and high-purity carbon organic compounds, and then the silicon carbide powder is dispersed in the flux Suspension; forming a model body by pouri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/573C04B35/622C04B35/64
Inventor 陈刚刘磊磊
Owner 西安希朗材料科技有限公司