Production of hafnium nitride thin-membrane materials from ion beam epitaxial growth apparatus

An epitaxial growth, thin film material technology, applied in ion implantation plating, metal material coating process, semiconductor/solid-state device manufacturing, etc., can solve the problem of expensive raw materials, difficult to purify transition group IVB refractory metal nitrides, etc problem, to achieve the effect of high-quality chemical ratio

Inactive Publication Date: 2006-05-31
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The methods currently used to prepare and grow hafnium nitride (HfN) thin films mainly include magnetron sputtering, pulsed laser deposition (PLD), ion beam assisted deposition (IBAD), plasma vapor deposition (PVD), and chemical vapor deposition (CVD). ) and electron beam evaporation, etc., but to prepare and grow hafnium nitride (HfN) thin films suitable for the semiconductor field, the above method still has the following disadvantages: 1) the existing common preparation and growth methods usually have v

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Production of hafnium nitride thin-membrane materials from ion beam epitaxial growth apparatus
  • Production of hafnium nitride thin-membrane materials from ion beam epitaxial growth apparatus
  • Production of hafnium nitride thin-membrane materials from ion beam epitaxial growth apparatus

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0072] The preparation of hafnium nitride (HfN) thin film materials is carried out on an ion beam epitaxy system with a double-beam structure, and hafnium chloride (HfCl) with low purity requirements is selected. 4 ) solid powder and nitrogen as the two ion sources of the dual ion beam epitaxy system to generate metal hafnium ions (Hf + ) beam and nitrogen ions (N + ) bundle of raw materials, reducing the cost of raw materials for the preparation and growth of hafnium nitride (HfN) thin film materials;

[0073] Using the mass separation function and ion deceleration function of the ion beam epitaxy growth equipment, the isotopically pure and low-energy metal hafnium ions (Hf + ) beam and nitrogen ions (N + ) beam, and the preparation and growth of thin film materials in an ultra-high vacuum growth chamber without any auxiliary working gas, and realized the high-purity growth of hafnium nitride (HfN) thin films that are difficult to purify;

[0074] Isotopically pure low-ene...

Embodiment

[0082] Concrete embodiment sees the relevant experimental data of table 2 and figure 2 , 3 , 4, 5, 6 experimental results.

[0083]

Ion source type

I beam

Berners-type solid ion source

Bundle II

Berners-type gas ion source

Ion source raw material

Hafnium Chloride (HfCl 4 )

(purity 98.5%)

Nitrogen (N 2 )

(purity 99.5%)

ion

the source

to bake

Degas

parameters

I 灯丝加热

20A

30A

I 弧室加热

10A

I 坩埚加热

5A

T 坩埚温度

140℃

140℃

P 离子源烘烤前后真空

1.5×10 -3 Pa

2.5×10 -4 Pa

ion

the source

secondary

heat up

parameters

I 灯丝加热

30A

I 弧室加热

10A

I 坩埚加热

5A

T 坩埚温度

160℃

P 源1工作前气压

2.6×10 -3 Pa

ion

the source

Work

parameters

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A method of producing hafnium nitride(HfN) thin-film material by ion beam epitaxy growing equipment. The process includes selecting hafnium tetrachloride (ZrCl4) powder andnitrogen(N2) as the materials of producing low-energy isotope Hf+ ion beam and N+ ion beam ,choosing twoion beams epitaxy growing equipment with mass separation function and Energetic-Ions depositing function, accurate controlling dosage and mixture ratio ,ion energy and growth temperature of the ion beams; obtaining hafnium nitride thin-film with high quality growth and low temperature extension in ultrahigh vacuum chamber. Ití»s a practical and economical method for producing hafnium nitride thin-film material in semiconductor domain owing to its convenience in growth controlling and optimizing.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for preparing a hafnium nitride (HfN) film material by using ion beam epitaxy (IBE) growth equipment. Background of the invention [0002] Group IVB refractory metal mononitrogen compounds with sodium chloride (NaCl) structure (B1 type), mainly including titanium nitride (TiN), hafnium nitride (ZrN) and hafnium nitride (HfN), all of which have High melting point, high density, high hardness and bright golden luster, in addition to being a good hard coating and decorative material, it has important applications in cutting tools, spare parts anti-corrosion and anti-wear treatment, decoration, etc., because it also has It has high electrical conductivity, good lattice matching with silicon (Si), and good thermal and chemical stability characteristics. It also has important applications in the field of semiconductor technology, such as silicon-based large-scale integr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C14/24C23C14/02C23C14/06H01L21/318H01L21/3205
Inventor 杨少延柴春林刘志凯陈涌海陈诺夫王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap