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Composition for forming anti-reflective coating for use in lithography

a technology of anti-reflective coating and composition, which is applied in the direction of photosensitive materials, instruments, photomechanical equipment, etc., can solve the problems of random reflection and standing wave off the substrate, and achieve the effects of effective reflection prevention, useful anti-reflective coating, and high reflection prevention

Inactive Publication Date: 2006-09-28
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a composition for forming an anti-reflective coating that prevents reflection during microfabrication, especially when using light with a wavelength of 193 nm. The composition can be quickly removed in the removal process and leads to a useful anti-reflective coating. The invention also provides a method for forming a resist pattern by using the composition. The anti-reflective coating prevents intermixing with the resist layer and has a higher dry-etching rate compared to the resist. The invention also includes a process for manufacturing a semiconductor device by coating the composition on a substrate, baking it to form an anti-reflective coating, covering it with a photoresist, exposing it to light, developing it, and transferring an image on the substrate by etching to form an integrated circuit element.

Problems solved by technology

Along with this change, influences of random reflection and standing wave off a substrate have become serious problems.

Method used

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  • Composition for forming anti-reflective coating for use in lithography
  • Composition for forming anti-reflective coating for use in lithography
  • Composition for forming anti-reflective coating for use in lithography

Examples

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Effect test

synthesis example 1

Synthesis of Resin

[0064] After 90 g of 2-hydroxypropyl methacrylate was dissolved in 455 g of propylene glycol monomethyl ether, the reaction solution was warmed at 70° C. and simultaneously nitrogen gas was passed into the reaction solution. Thereafter, 0.9 g of azobisisobutyronitrile (manufactured by JUNSEI CHEMICAL CO., LTD.) was added as polymerization initiator and stirred under nitrogen atmosphere for 24 hours, and then 0.1 g of 4-methoxyphenol (manufactured by TOKYO KASEI KOGYO CO., LTD.) was added as polymerization terminator. The resulting resin was subjected to GPC analysis and as a result, its weight average molecular weight was found to be 71,300 in terms of standard polystyrene. The solids content in the solution was 20%.

synthesis example 2

[0065] Cresol novolak resin (manufactured by ASAHI CIBA CO., LTD., trade name ECN1299, weight average molecular weight: 3,900, the structure being shown by formula (5)) was provided.

[0066] 10 g of cresol novolak resin described above was added in 80 g of propylene glycol monomethyl ether and dissolved therein. To the solution, 9.7 g of 9-anthracenecarboxylic acid and 0.26 g of benzyltriethylammonium chloride were added. The resulting mixture was reacted at 105° C. for 24 hours. GPC analysis of the resulting polymer resin gave a weight average molecular weight of 5,600 in terms of standard polystyrene. The chemical structure of the resin is shown by formula (6).

synthesis example 3

[0067] Tris-(2,3-epoxypropyl)-isocyanurate (manufactured by NISSAN CHEMICAL INDUSTRIES, LTD., trade name TEPIC, the structure being shown by formula (7)) was provided.

[0068] 3.0 g of the above-mentioned tris-(2,3-epoxypropyl)-isocyanurate was added and dissolved in 7.0 g of xylene. Then 2.8 g of phenol and 0.17 g of benzyl triethyl ammonium chloride were added to the dissolved solution, and thereafter reacted at 140° C. for 24 hours. After the reaction was completed, the reaction solution was gradually cooled, crystals separated out were filtered, and then purified by recrystalization from a mixed solvent of isopropylalcohol / acetone=9 / 1. The chemical structure of the resulting compound is shown by formula (8).

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Abstract

A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): and can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists.

Description

[0001] This is a Division of application Ser. No. 10 / 472,695 filed Sep. 24, 2003, which in turn is a National Stage of PCT / JP02 / 03576 filed Apr. 10, 2002. The entire disclosure of the prior application is hereby incorporated by reference in its entirety.TECHNICAL FIELD [0002] The present invention relates to a composition for forming anti-reflective coating that is effective in lowering of adverse effects due to reflection off an underlying substrate in a lithographic process by using ArF excimer laser; and a method of forming a resist pattern by using the composition for forming anti-reflective coating. BACKGROUND ART [0003] Conventionally, in the manufacture of semiconductor devices, micro-processing by lithography using a photoresist composition has been carried out. The micro-processing is a processing method including forming a thin film of a photoresist composition on a silicon wafer, irradiating actinic rays such as ultraviolet rays via a mask pattern depicting a pattern for ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G03C5/00C08G18/79C08G73/06C09D179/04G03F7/09H01L21/027
CPCC08G18/791C08G73/0655C09D179/04G03F7/091H01L21/0276G03F7/11
Inventor KISHIOKA, TAKAHIROARASE, SHINYAMIZUSAWA, KEN-ICHI
Owner NISSAN CHEM IND LTD
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