Methods of post chemical mechanical polishing and wafer cleaning using amidoxime compositions

US20090133716A1Inactive Publication Date: 2009-05-28EKC TECH
0 Cites 111 Cited by

Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
EKC TECH
Publication Date
2009-05-28
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to a method for the removal of residues and contaminants from metal or dielectric surfaces and to a method for chemical mechanical polishing of a copper or aluminum surface. The methods of the invention include using an aqueous amidoxime complex agent. Optionally, the pH of the solution can be adjusted with an acid or base. The method includes applying the above composition to the copper or aluminum surface and polishing the surface in the presence of the composition.
Need to check novelty before this filing date? Find Prior Art

Description

CROSS-REFERENCE TO ELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 61 / 000,727, filed Oct. 29, 2007, and U.S. Provisional Application No. 61 / 006,225, filed Dec. 31, 2007, both of which are incorporated herein by reference in their entirety.BACKGROUND OF THE INVENTION

[0002] The present invention relates to compositions and methods for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper or aluminum surface including an aqueous solution comprising an amidoxime complex applied for a time sufficient to remove the chemical residues.

[0003] The National Technology Roadmap for the Semiconductor Industries (1994) indicated that the current computer chips with 0.35 micron feature sizes will be reduced to 0.18 micron feature size in 2001. The DRAM chip will have a memory of 1 gigabit, and typical CPU will have 13 million transistors per cm2 (currently they only contain about 4 million). The...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More