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Solar battery with soft copper, indium, gallium and selenium film

A technology of solar cells and copper indium gallium selenide, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems affecting battery performance, difficult to install or carry, peeling off, etc., to achieve wide application and promotion, improve light conversion efficiency, The effect of simple production process

Inactive Publication Date: 2010-03-17
EAST CHINA NORMAL UNIVERSITY
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Problems solved by technology

Use H 2 The disadvantage of Se for selenization is that H 2 Se is very toxic and therefore dangerous for people in mass production environments
In addition, traditional CIGS thin-film solar cells use a rigid glass substrate and molybdenum as the back electrode. Due to the difference in the thermal expansion coefficient of glass and molybdenum, the molybdenum electrode sputtered directly on the glass and the subsequently prepared CIGS absorber layer are at high temperature. The annealing treatment will easily cause chapping and peeling, which will seriously affect the performance of the battery
The use of glass substrates also leads to the production of panels or modules that are bulky, difficult to install or carry

Method used

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  • Solar battery with soft copper, indium, gallium and selenium film

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Embodiment 1

[0027] The following specific examples of preparing copper indium gallium selenium thin film solar cells with polyimide as a flexible substrate will further elaborate the present invention, and its specific preparation is as follows:

[0028] (1) Clean the flexible polyimide substrate 1 of 5cm×5cm×100um with pure acetone, absolute ethanol and deionized water for 15 minutes, and then dry it with pure nitrogen for later use;

[0029] (2) The above-mentioned cleaned polyimide flexible substrate 1 is placed in the vacuum chamber of the magnetron sputtering system, and in a pure argon atmosphere, it is glow-treated for 15 minutes with a plasma with a power of 50W;

[0030] (3) Under the pressure of 1.0Pa and the radio frequency power of 200W, the sodium-containing silicate target (Na 2 O·CaO·5SiO 2 ) target material for 50 minutes, on the polyimide flexible substrate 1, the thickness of the film layer is deposited on the polyimide flexible substrate 1, and the alkali silicate film...

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Abstract

The invention discloses a solar battery with a soft copper, indium, gallium and selenium film, which is characterized in that the solar battery is prepared by sequentially preparing an alkali silicatefilm layer, a lower electrode layer, a copper, indium, gallium and selenium light absorbing layer, a transition layer, an eigen zinc oxide layer, an aluminum-mixed zinc oxide layer and an upper electrode layer on a soft substrate. Compared with the prior art, the invention has the advantages of high battery open-circuit voltage and packing factor, great improvement on light converting efficiency,service life, quality and performance of the solar battery, simple preparation technology and low production cost, and enables Chinese solar battery to be further and widely applied and popularized.

Description

technical field [0001] The invention relates to a solar photovoltaic cell, in particular to a flexible copper indium gallium selenium thin film solar cell with high photoelectric conversion efficiency. Background technique [0002] As mankind enters the 21st century, environmental pollution and energy shortages have increasingly restricted the sustainable development of society. Renewable energy technologies such as solar energy represent the development direction of clean energy. As the most ideal feature of sustainable development, solar photovoltaic Power generation will enter the human energy structure and become an important part of basic energy. It is estimated that by 2030, photovoltaic power generation will become an important part of new energy utilization, and solar cell preparation technology is the basis for the development of photovoltaic power generation industry. The types of solar cells can be divided into silicon, compound semiconductor, organic semiconduct...

Claims

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Application Information

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IPC IPC(8): H01L31/042H01L31/18H01L31/02H01L31/0445
CPCY02E10/50H01L31/03928Y02E10/541Y02P70/50
Inventor 黄素梅王正安孙卓
Owner EAST CHINA NORMAL UNIVERSITY
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