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Cadmium telluride film solar cell and preparation method thereof

A technology of solar cells and cadmium telluride, which is applied in the field of solar cells, can solve problems such as environmental pollution, large amount of toxic cadmium, and hazards to operators, and achieve the effect of avoiding environmental pollution

Active Publication Date: 2010-04-21
REALFORCE POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage is that the amount of toxic cadmium is large, and once the elemental cadmium, cadmium ions and cadmium vapor leak during the preparation of the film, it will cause great harm to the environment and people.
At present, methods such as physical vapor deposition, chemical vapor deposition, vacuum sublimation, and magnetron sputtering are mostly used to prepare cadmium telluride thin films. The use of these methods for cadmium target or vacuum evaporation will bring huge potential hazards to operators and cause environmental pollution at the same time.

Method used

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  • Cadmium telluride film solar cell and preparation method thereof
  • Cadmium telluride film solar cell and preparation method thereof
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preparation example Construction

[0028] The preparation method of the present invention is:

[0029] (1) Use low toxicity compound cadmium as the cadmium source, use sulfur or sulfide as the sulfur source, use tellurium or telluride as the tellurium source, and carry out a molar ratio of cadmium source to sulfur source or tellurium source of 1:1 to 1:50. chemical reaction to prepare cadmium sulfide and cadmium telluride particles with uniform particle size; the cadmium sulfide and cadmium telluride particles are prepared by high temperature pyrolysis method or hydrothermal synthesis method, wherein the cadmium source is cadmium oxide, cadmium oleate, ten Any one of cadmium octaate, cadmium hexadecate, cadmium chloride, cadmium sulfate, and cadmium nitrate; the sulfur source adopts long-chain organic acid or organic amine-treated sulfur in the high-temperature pyrolysis method, and the tellurium source adopts Tellurium treated with long-chain organic acids or organic amines, and the high-boiling organic solven...

Embodiment 1

[0035]Get 3mmol of cadmium oxide, 5mmol of oleic acid, 80g of octadecene mixed into a 500mL three-necked flask, heated to 240°C under nitrogen environment until the solution is completely uniform, get 3mmol of sulfur powder, 36mmol of oleylamine and 100mL of octadecene and heated to 180 The light yellow solution obtained at ℃ was added to the above-mentioned three-necked flask, and then the temperature was set to 220 ℃ for growth, and the reaction was performed for 1 hour to obtain cadmium sulfide.

[0036] The above cadmium sulfide product is added to a mixed solution of 90 mL of acetone and 10 mL of methanol, and purified by centrifugation for 3 to 5 times.

[0037] Take 3mmol of cadmium oleate, 1mmol of oleic acid, and 80g of octadecene mixed into a 500mL three-neck flask, heated to 280°C under nitrogen atmosphere until the solution is completely uniform, and heated by taking 150mmol tellurium powder, 36mmol L octadecylamine and 100mL octadecene. The light yellow solution o...

Embodiment 2

[0048] Get 3mmol cadmium oxide, 5mmol hexadecanoic acid, 80g paraffin mix and put into 500mL three-necked flask, heat to 240 ℃ under nitrogen environment until the solution is completely uniform, get 12mmol sulfur powder 36mmol oleic acid and 100mL octadecene and paraffin mixed solution The light yellow solution obtained by heating to 180 DEG C was added to the above three-necked flask, and then the temperature was set to 220 DEG C for growth, and the reaction was performed for 1 hour to obtain cadmium sulfide.

[0049] Take 3mmol of cadmium octadecanoate, 1mmol of hexadecanoic acid, and 80g of paraffin, mix them into a 500mL three-necked flask, heat to 280°C under nitrogen atmosphere until the solution is completely uniform, take 12mmol of tellurium powder, 36mmol of octadecanoic acid and 100mL of octadecene and heat The light yellow solution obtained at 220° C. was added to the above three-necked flask, and then the temperature was set to 260° C. for growth, and the reaction ...

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Abstract

The invention discloses a cadmium telluride film solar cell and a preparation method thereof. A structure of the cadmium telluride film solar cell is that the cell comprises a substrate with a conducting layer, and the substrate is sequentially deposited with a cadmium sulfide layer, a cadmium telluride layer, a tellurium-rich layer, a back contact layer and a back electrode. According to the method, a treated low-toxicity compound cadmium is adopted as a cadmium source, and treated tellurium or telluride is adopted as a tellurium source to prepare the cadmium telluride film solar cell; the cadmium source and the tellurium source undergo a chemical reaction in a certain molar ratio to prepare cadmium telluride particles with uniform particle size; and then the cadmium telluride particles are purified, cadmium telluride and a low boiling-point solvent containing polyvinylidene fluoride are mixed to obtain sol, and a cadmium telluride film is prepared by a coating method. The method prevents human bodies from contacting high-toxicity cadmium element and cadmium steam, and also avoids environmental pollution at the same time.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a cadmium telluride thin film solar cell and a preparation method thereof. Background technique [0002] With the rapid development of human beings, the demand for energy has increased rapidly, leading to the exhaustion of fossil fuel energy. The development of new energy is the only way, and the development of solar energy is the fundamental way for mankind to solve energy problems. Using solar power to generate electricity is one of the important directions of developing and utilizing solar energy, which is to use the photovoltaic effect of semiconductors to realize solar power generation. Chapin, Fuller and Pearson used this principle to make the first solar cell in 1954 using diffused silicon p-n junction technology. Since then, many scientific researchers have made unremitting efforts to develop solar photovoltaic devices such as monocrystalline silicon, polycrystalline silicon, ...

Claims

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Application Information

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IPC IPC(8): H01L31/042H01L31/18H01L31/0445
CPCY02E10/50Y02P70/50
Inventor 司红磊林道勇王文斌刘月平李青海李林松
Owner REALFORCE POWER
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