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Method for producing metal oxide film, metal oxide film, element using the metal oxide film, substrate with metal oxide film, and device using the substrate with metal oxide film

一种氧化物膜、制造方法的技术，应用在稀土金属氧化物/氢氧化物、镧系元素氧化物/氢氧化物、氧气/臭氧/氧化物/氢氧化物等方向，能够解决难致密化、致密性低、膜强度低等问题

Inactive Publication Date: 2013-02-13
SUMITOMO METAL MINING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0024] In order to obtain a high-quality and high-permittivity metal oxide film suitable for the gate insulating film of the above thin-film transistor device, a high-quality and high-work function metal oxide film suitable for the hole injection layer of the organic EL device, or also Various metal oxides suitable for other purposes, it is difficult to achieve the purpose by coating method at a relatively low firing temperature
The reason for this is as follows. In the metal oxide film formed by applying a coating liquid for forming a metal oxide film on a substrate, drying and heat treatment, the organometallic compound etc. In the process of decomposing or burning (oxidizing) and converting into a metal oxide film, the formed metal oxide particles are difficult to densify, and the resulting metal oxide film has low compactness, low film strength and low film strength. Problems such as flatness deterioration

Method used

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  • Method for producing metal oxide film, metal oxide film, element using the metal oxide film, substrate with metal oxide film, and device using the substrate with metal oxide film
  • Method for producing metal oxide film, metal oxide film, element using the metal oxide film, substrate with metal oxide film, and device using the substrate with metal oxide film
  • Method for producing metal oxide film, metal oxide film, element using the metal oxide film, substrate with metal oxide film, and device using the substrate with metal oxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0258] [Preparation of coating solution]

[0259] Hafnium n-butoxide (liquid at room temperature) [Hf(OC 4 h 9 ) 4 ] (molecular weight = 470.95) 10g, N-methyl-2-pyrrolidone (NMP) 14g, diethylene glycol monoethyl ether (ethyl carbitol) 25g, hydroxypropyl cellulose (HPC; low molecular weight type) 1g Mix, heat to 120°C, stir for 60 minutes to dissolve, then mix 43g of ethanol (EA) and 7g of isopropanol (IPA) into 50g of the obtained solution, stir well until uniform, and make n-butanol A coating liquid for forming a metal oxide film comprising 10% by weight of hafnium and 1% by weight of hydroxypropyl cellulose. The viscosity (25° C.) of the coating liquid for forming a metal oxide film is about 10 mPa·s.

[0260] [Production of metal oxide film]

[0261] The prepared coating solution for forming a metal oxide film was applied on a soda-lime glass substrate (10cm×10cm×thickness 3mm; haze value = 0.26%, visible light transmittance = 91.1%, refractive index = 1.53) at 25°C ov...

Embodiment 2

[0277] [Preparation of coating solution]

[0278] Niobium n-butoxide (liquid at room temperature) [Nb(C 4 h 9 o) 5 ] (molecular weight = 458.12) 10g, N-methyl-2-pyrrolidone (NMP) 14g, diethylene glycol monoethyl ether (ethyl carbitol) 25g, hydroxypropyl cellulose (HPC; low molecular weight type) 1g Mix, heat to 120°C, stir for 60 minutes to dissolve, then mix 43g of ethanol (EA) and 7g of isopropanol (IPA) into 50g of the obtained solution, stir well until uniform, and make n-butanol A coating solution for forming a metal oxide film comprising 10% by weight of niobium and 1% by weight of hydroxypropyl cellulose. The viscosity (25° C.) of the coating liquid for forming a metal oxide film is about 10 mPa·s.

[0279] The prepared coating solution for forming a metal oxide film was applied on a soda-lime glass substrate (10cm×10cm×thickness 3mm; haze value = 0.26%, visible light transmittance = 91.1%, refractive index = 1.53) at 25°C over the entire After forming a spin coating...

Embodiment 3

[0283] [Preparation of coating solution]

[0284] Zirconium n-butoxide (liquid at room temperature) [Zr(C 4 h 9 O) 4 ] (molecular weight = 383.68) 10g, N-methyl-2-pyrrolidone (NMP) 14g, diethylene glycol monoethyl ether (ethyl carbitol) 25g, hydroxypropyl cellulose (HPC; low molecular weight type) 1g Mix, heat to 120°C, stir for 60 minutes to dissolve, then mix 43g of ethanol (EA) and 7g of isopropanol (IPA) into 50g of the obtained solution, stir well until uniform, and make n-butanol A coating liquid for forming a metal oxide film comprising 10% by weight of zirconium and 1% by weight of hydroxypropyl cellulose. The viscosity (25° C.) of the coating liquid for forming a metal oxide film is about 10 mPa·s.

[0285] Except for using the coating solution for forming a metal oxide film, film formation was carried out in the same manner as in Example 2, and a zirconia (ZrO 2 ) The metal oxide film of Example 3 with the main component.

[0286] Various characteristics of the...

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Abstract

Disclosed are: a metal oxide film, which is formed by a coating method that is one of the methods for producing a metal oxide film, and which has a good balance between excellent transparency and high electrical conductivity, while having excellent film strength; and a method for producing the metal oxide film. Specifically disclosed is a method for producing a metal oxide film, which comprises: a coating step wherein a coating film is formed on a substrate using a metal oxide film-forming coating liquid that contains various organic metal compounds; a drying step wherein the coating film is changed into a dry coating film; and a heating step wherein an inorganic film is formed from the dry coating film. The method for producing a metal oxide film is characterized in that in the heating step, the dry coating film, which is mainly composed of the various organic metal compounds, is heated to a temperature at which at least mineralization of organic metal compound components occurs or higher in an oxygen-containing atmosphere at a temperature not higher than the temperature that is lower by 10 DEG C than the dew point, so that the organic components in the dry coating film are removed by thermal decomposition or combustion, or by thermal decomposition and combustion, thereby forming a metal oxide fine particle layer which is densely filled with metal oxide fine particles that are mainly composed of various metal oxides.

Description

technical field [0001] The present invention relates to a metal oxide film and a method for producing the metal oxide film. [0002] Specifically, it relates to a method for producing a metal oxide film formed on a substrate such as glass or plastic, having high density and excellent film strength, and a metal oxide film obtained by the method for producing the metal oxide film. It further relates to an element using the metal oxide film, a substrate with the metal oxide film, and a device using the substrate with the metal oxide film. Background technique [0003] Transparent conductive materials used in functional coatings such as transparent electrodes for liquid crystal displays, electroluminescent elements, plasma displays, etc., transparent electrodes for touch panels, solar cells, etc., infrared reflection, electromagnetic wave shielding, antistatic, and antifog. As a material for forming the film, tin-doped indium oxide (Indium Tin Oxide, hereinafter sometimes refer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G27/02C01F7/02C01F17/00C01G23/04C01G25/02C03C17/25C03C17/27H01B5/14H01B13/00C01B13/32C01F17/212C01F17/218C01F17/224C01F17/229C01F17/235
CPCB05D3/007C03C2217/22C03C17/006C01F7/02C03C2217/218C01G35/00C01G41/02C01G39/02C03C2217/212C03C2218/119C03C2217/42C01G33/00C03C2217/228C01G25/02C01G23/047C01F17/0043C03C2217/219C03C2218/116C01G31/02C01G27/02C03C2217/214H01L21/02565H01L21/02628C01F17/235C01F17/229C01F17/224C01F17/212C01F17/218
Inventor 行延雅也村山勇树永野崇仁大塚良广
Owner SUMITOMO METAL MINING CO LTD
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