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Organic electroluminescence device and preparation method thereof

An electroluminescent device and electroluminescent technology, applied in the directions of organic light-emitting devices, organic light-emitting device structures, organic semiconductor devices, etc., can solve the damage of organic functional layers, poor film formation of lithium fluoride, and reduce the probability of electron and hole recombination And other issues

Inactive Publication Date: 2015-05-27
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The electron injection layer of traditional organic electroluminescent devices generally uses lithium fluoride, but because the melting point of lithium fluoride is too high, a large current must be used for evaporation during evaporation, and the evaporation room of the organic evaporation room is too high , will damage other organic functional layers, and the film-forming property of lithium fluoride is poor, and it is easy to form electron defects, resulting in the quenching of electrons and reducing the recombination probability of electrons and holes

Method used

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  • Organic electroluminescence device and preparation method thereof
  • Organic electroluminescence device and preparation method thereof

Examples

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preparation example Construction

[0034] The preparation method of the organic electroluminescent device 100 according to an embodiment includes the following steps:

[0035] In step S110 , a hole injection layer 20 , a hole transport layer 30 , a light emitting layer 40 , an electron transport layer 50 and an electron injection layer 60 are sequentially formed on the surface of the anode 10 .

[0036]The anode 10 is indium tin oxide glass (ITO), fluorine-doped tin oxide glass (FTO), aluminum-doped zinc oxide glass (AZO) or indium-doped zinc oxide glass (IZO), preferably ITO, the thickness of the anode 10 It is 50 nm to 300 nm, preferably 140 nm.

[0037] In this embodiment, before the hole injection layer 20 is formed on the surface of the anode 10, the anode 10 is pre-treated. The pre-treatment includes: subjecting the anode 10 to photolithography, cutting it into a required size, using detergent, deionization Water, acetone, ethanol, and isoacetone were each ultrasonically cleaned for 15 minutes to remove ...

Embodiment 1

[0052] The structure prepared in this example is ITO / MoO 3 / NPB / Alq 3 / Bphen / Rb 2 CO 3 :MoO 3 : Zn / Ag organic electroluminescence device, in this embodiment and the following embodiments, " / " indicates layer, ":" indicates doping.

[0053] First, the ITO is subjected to photolithography, and then cut into the required size, and then ultrasonicated with detergent, deionized water, acetone, ethanol, and isopropanol for 15 minutes each to remove organic pollutants on the glass surface; after cleaning, the conductive substrate is cleaned. Appropriate treatment: oxygen plasma treatment, treatment time is 5min, power is 30W; thickness is 130nm, hole injection layer is evaporated, and the material is MoO 3 , the thickness is 40nm; the vapor-deposited hole transport layer is made of NPB and the thickness is 30nm; the vapor-deposited light-emitting layer is made of Alq 3 , the thickness is 17nm; the electron transport layer is evaporated, the material is Bphen, the thickness is 16...

Embodiment 2

[0060] The structure prepared in this example is AZO / V 2 O 5 / NPB / DCJTB / Bphen / RbCl:WO 3 : Zn / Al organic electroluminescent devices.

[0061] First, the AZO glass substrate was washed with detergent, deionized water, and ultrasonic for 15 minutes to remove organic pollutants on the surface of the glass; vapor deposition hole injection layer: the material is V 2 O 5 , the thickness is 40nm; the vapor-deposited hole transport layer: the material is NPB, the thickness is 45nm; the vapor-deposited light-emitting layer: the selected material is DCJTB, the thickness is 8nm; the vapor-deposited electron transport layer, the material is TAZ, the thickness is 65nm; Electron beam evaporation electron injection layer, the material is RbCl:WO 3 : Zn, RbCl, WO 3 The mass ratio with Zn is 2:1:1, the thickness is 100nm, and the thickness is 100nm. The material is Al, and the thickness is 80nm.

[0062] The specific process conditions of the electron beam evaporation method are: the worki...

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Abstract

An organic electroluminescence device comprises an anode, a hole injection layer, a hole transporting layer, a luminous layer, an electron transporting layer, an electron injection layer and a cathode which are overlapped in sequence, wherein the electron injection layer is made of one or more rubidium compound materials, one or more metal oxide materials and zinc powder; the rubidium compound material(s) is / are one or more of rubidium carbonate, rubidium chloride, rubidium nitrate and rubidium sulfate; the metal oxide material(s) is / are one or more of molybdenum trioxide, tungsten trioxide and vanadic oxide. The light efficiency of the organic electroluminescence device is relatively high. The invention further provides a preparation method of the organic electroluminescence device.

Description

technical field [0001] The present invention relates to an organic electroluminescence device and a preparation method thereof. Background technique [0002] The light-emitting principle of organic electroluminescence devices is based on the fact that under the action of an external electric field, electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of organic matter, while holes are injected from the anode to the highest occupied molecular orbital (HOMO) of organic matter. Electrons and holes meet, recombine, and form excitons in the light-emitting layer. The excitons migrate under the action of the electric field, transfer energy to the light-emitting material, and excite the electrons to transition from the ground state to the excited state. The energy of the excited state is deactivated by radiation to generate photons. , releasing light energy. [0003] The electron injection layer of traditional organic electroluminescent devices ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/54H01L51/52H01L51/56
CPCH10K50/171H10K2102/00H10K2102/302H10K71/00
Inventor 周明杰黄辉张振华王平
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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