Method for removing valence electrons of graphene

A technology of valence electrons and graphene, which is applied in the field of graphene devalence electrons, can solve the problems of undisclosed graphene devalence electron technology, high chemical stability of graphene, difficulty in graphene application, etc., so as to change the characteristics of mutual attraction , easy industrial amplification, and low production cost

Active Publication Date: 2016-10-12
CHONGQING DELING TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, graphene with a complete structure has high chemical stability, weak interaction with other media, and strong van der Waals attraction between layers, making it difficult to disperse in many common solvents to form a stable solution, which poses a challenge to the further application of graphene. It is extremely difficult. To realize the uniform and stable dispersion of graphene in the oil, the surface of graphene should be modified to remove the valence electrons on the surface of graphene.

Method used

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  • Method for removing valence electrons of graphene

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Effect test

Embodiment 1

[0023] Graphene oxide, PEG, urea, and sodium sulfide were sequentially added to ether solvent (graphene oxide: PEG: urea: sodium sulfide: ether = 100g: 4g: 5g: 3g: 2L), ultrasonicated for 2 hours, and the mixed solution was placed in In the fume hood, the graphene / valence electron remover mixture is obtained after the solvent is volatilized. The obtained graphene / valence electron remover mixture is placed in carbon dioxide / water vapor (flow 200ml / min) / argon (flow is 200ml / min) atmosphere, after activating 100min at a temperature of 800°C, stop heating, and The gas flow was switched to diborane, and the reaction was carried out at 200° C. for 15 hours. Finally, the temperature was naturally lowered to room temperature under a mixed atmosphere of argon (flow rate: 200 ml / min), and devalent electron graphene was obtained.

Embodiment 2

[0025] Graphene oxide, 12-potassium tungstophosphate, and phosphoric acid were dissolved in deionized water (graphene oxide: 12-potassium tungstophosphate: phosphoric acid: water=100g: 3g: 5g: 2L), ultrasonically stirred for 1 hour, and centrifuged to obtain The graphene / valence electron remover mixture is placed under the atmosphere of carbon dioxide / water vapor (flow rate 200ml / min) / argon gas (flow rate is 200ml / min), after activation at a temperature of 500°C for 120min, stop heating and switch the gas flow Borane was reacted at 180°C for 12 hours, and finally the temperature was naturally lowered to room temperature under the mixed atmosphere of argon (flow rate: 200ml / min) to obtain devalent electron graphene.

Embodiment 3

[0027] Dissolve graphene oxide, polymethyl methacrylate, siloxane, sodium hydrosulfide, and triphenylphosphine in a mixed solution of cyclohexane and methylpyrrolidone (graphene: polymethyl methacrylate: silicon oxide alkane: sodium hydrosulfide: triphenylphosphine: cyclohexane and methylpyrrolidone mixed solution=100g: 4g: 5g: 3g: 2g: 2L), ultrasonic stirring for 1.5 hours, solvent removal, the obtained graphene / valent Electron remover mixture is placed in carbon dioxide / water vapor (flow rate 200ml / min) / argon (flow rate is 200ml / min) atmosphere, after activation at 750°C for 120min, stop heating, switch the gas flow to propborane, The reaction was carried out at 150°C for 24 hours, and finally the temperature was naturally lowered to room temperature in a mixed atmosphere of argon (flow rate: 200ml / min), and devalent electron graphene was obtained.

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Abstract

The invention discloses a method for removing valence electrons of graphene. The method includes the following steps that oxidized graphene and a valence electron remover are sequentially added into a solvent, the mixture is dispersed and mixed to be uniform through ultrasonic treatment, the solvent is removed, and an oxidized graphene/valence electron remover mixture is obtained; the oxidized graphene/valence electron remover mixture is put in mixed gas flow of inert gas and carbon dioxide/water steam for activation, the gas flow is switched into a boron-bearing gas-state compound, heat is preserved for 5-24 hours at the temperature of 150-230 DEG C, the material is cooled to room temperature, and the graphene with the valence electrons removed is obtained. The valence electrons between layers of the graphene are removed through catalysis of doping elements, the intermolecular force between the layers of the graphene is reduced, stacking and compounding between the slice layers of the graphene are avoided accordingly, the characteristic that the graphene attract is changed, the problem that the graphene is clustered in oil is effectively solved, and the situation that the performance of graphene is lost due to stacking and compounding of the slice layers in the using process is relieved.

Description

technical field [0001] The invention belongs to the field of graphene modification and relates to a method for removing valence electrons from graphene. Background technique [0002] Graphene is a benzene ring structure material in which carbon atoms are closely arranged in two-dimensional space. In 2004, Novoselov et al. from the University of Manchester successfully prepared carbon atoms with sp 2 A two-dimensional single-layer graphene crystal composed of hybrid-connected monoatomic layers, which is the thinnest material found in the world so far. Graphene has a special structure and singular physical properties. In its structure, each carbon atom has 4 valence electrons, of which 3 electrons (2s electrons, 2px electrons and 2py electrons) form a planar sp 2 Hybrid orbitals, connecting three adjacent carbon atoms through σ bonds to form a hexagonal planar structure; the remaining one electron is located in the pz orbital in the normal direction, and forms a π band with a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
CPCC01B2204/22
Inventor 罗廷军
Owner CHONGQING DELING TECH
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