Copper-based bonding lead and production process thereof

Abstract

The invention relates to a copper-based bonding lead and a production process thereof. In the copper-based bonding lead, high-purity copper-based alloy is used as a substrate, a surface of the substrate is plated with a high-purity palladium protection layer, and the substrate material comprises microelements such as silver, indium, phosphorus and yttrium. The preparation comprises the following steps of high-purity copper smelting, single-crystal copper-based alloy casting, rough pulling, medium pulling, palladium plating, fine pulling, slight pulling, cleaning and passivation, compound winding and packaging. The prepared copper-based bonding lead has excellent performance such as mechanical property, welding performance, electrical conductivity, heat conductivity and oxidation resistance, and meanwhile, the copper-based bonding lead is small in wire diameter and is suitably used for package of a high-density and multi-pin integrated circuit.

Description

technical field [0001] The invention relates to the technical field of electronic packaging materials, in particular to a production process of copper-based bonding wires for electronic packaging. Background technique [0002] Wire bonding is a key process for electrical connection between the semiconductor chip and the outside world in the packaging process. The connection wire that interconnects the chip and the frame pins through the ultrasonic or thermosonic pressure welding process is called a bonding wire. Commonly used bonding wires include gold , silver, copper, etc. Whether it is integrated circuit packaging or discrete device packaging, bonding wires for chip and frame pin interconnection are crucial materials. Semiconductor technology is advancing towards small volume, high performance, high density, and multi-chip. The requirements for packaging lead materials are getting thinner and thinner, and the leads are required to have good electrical conductivity and th...

AI Technical Summary

Problems solved by technology

[0011] However, compared with gold wires, copper wires are less stable chemically and are easily oxidized. Physical parameters such as hardness and yield strength of copper are higher than gold wires, which means that greater ultrasonic energy and bonding pressure need to be applied during bonding. , so it is easy to cause damage or even destruction to the chip, which is the bottleneck of the copper wire package bonding process

Replacing gold bonding wires with copper bonding wires is an inevitable trend in the development of the semiconductor industry in the future. However, due to poor chemical stability and easy oxidation of copper, it is subject to certain constraints in production, storage, transportation and welding processes, and is not suitable for use. For high-end semiconductor packages with high power and high heat generation (such as ultra-large-scale ICs, bright LEDs, etc.)