Method for preparing copper film through controlled atmosphere cold spraying

Abstract

The invention discloses a method for preparing a copper film through controlled atmosphere cold spraying. The method comprises the steps that firstly, original copper powder is conveyed into a powder oxygen content control unit, copper oxide on the surfaces of copper powder particles is reduced into copper, and the oxygen content of the copper powder is reduced; secondly, the copper powder treated through the powder oxygen content control unit is conveyed into a powder granularity control and powder feeding unit, the input copper powder is scattered and screened, and the granularity of the output copper powder particles is controlled within the set range; thirdly, the copper powder treated in the second step is conveyed into a cold spraying nozzle in a controlled oxygen partial pressure cavity; and fourthly, the speed and temperature of the copper powder particles are regulated and controlled through a gas pressure, flow and temperature control unit, and the copper powder particles in the controlled oxygen partial pressure cavity collide with base body depositions to form the copper film. The film obtained through the method is dense in structure and low in oxygen content, the conductivity is not lower than 80% that of corresponding component dense block materials, and the film is superior to a traditional electrolysis or copper electroplating film in the aspects of environment protection and cost.

Description

technical field

[0001] The invention relates to the field of copper thin film preparation technology and controlled atmosphere cold spraying, in particular to a method for preparing copper thin film by controlled atmosphere cold spraying. Background technique

[0002] Copper has good electrical and thermal conductivity and is often used in electronic or power equipment. Due to the needs of process requirements or cost control, copper mainly exists in the form of copper film in many places, such as electroplating a layer of copper film on the surface of aluminum alloy and other metals to increase the conductivity and welding characteristics of the material, or using copper foil in copper clad laminates. Applications as key materials, etc. However, there are problems such as high energy consumption and pollution of electroplating waste liquid in the electroplating process of electroplating copper film on the metal surface. As for the copper foil used in the preparation of co...

Examples

Embodiment 1

[0044] In this embodiment, spherical submicron pure copper powder is selected as the raw material, the particle size range of the original copper powder particles is 0.3-1.5 μm, a polished single crystal silicon wafer is selected as the substrate, helium is used as the carrier gas, and the gas pressure during spraying is 0.1MPa, the gas preheating temperature is 200°C, the spraying distance is 5mm, and the copper film is prepared on the single crystal silicon wafer by the controlled atmosphere cold spraying, the film thickness is about 10μm, Figure 4 It is a cross-sectional SEM photo of the copper thin film. From the cross-sectional morphology of the prepared copper thin film, it can be seen that the copper thin film is uniform, continuous, well bonded to the substrate, and has no cracks.

Embodiment 2

[0046] In this embodiment, spherical submicron pure copper powder is selected as the raw material, the particle size range of the original copper powder particles is 0.3-1.5 μm, a polished single crystal silicon wafer is selected as the substrate, helium is used as the carrier gas, and the gas pressure during spraying is 0.1MPa, the gas preheating temperature is 100°C, the spraying distance is 5mm, and the copper film is prepared on the single crystal silicon wafer by controlled atmosphere cold spraying, and the film thickness is about 7μm.

Embodiment 3

[0048]In this embodiment, spherical submicron pure copper powder is selected as the raw material, the particle size range of the original copper powder particles is 0.3-1.5 μm, a polished single crystal silicon wafer is selected as the substrate, helium is used as the carrier gas, and the gas pressure during spraying is 0.1MPa, the gas preheating temperature is 200°C, the spraying distance is 10mm, and the copper thin film pattern is prepared on the single crystal silicon wafer by controlled atmosphere cold spraying. The single line width of the pattern is 0.14±0.02mm, and the thickness is about 4μm. Figure 5 It is a photo of the copper thin film pattern. From the overall appearance of the prepared copper pattern, it can be seen that the copper pattern lines are uniform and continuous, and various required two-dimensional copper thin film patterns can be prepared according to requirements.

technical field

[0001] The invention relates to the field of copper thin film preparation technology and controlled atmosphere cold spraying, in particular to a method for preparing copper thin film by controlled atmosphere cold spraying. Background technique

[0002] Copper has good electrical and thermal conductivity and is often used in electronic or power equipment. Due to the needs of process requirements or cost control, copper mainly exists in the form of copper film in many places, such as electroplating a layer of copper film on the surface of aluminum alloy and other metals to increase the conductivity and welding characteristics of the material, or using copper foil in copper clad laminates. Applications as key materials, etc. However, there are problems such as high energy consumption and pollution of electroplating waste liquid in the electroplating process of electroplating copper film on the metal surface. As for the copper foil used in the preparation of co...

Examples

Embodiment 1

[0044] In this embodiment, spherical submicron pure copper powder is selected as the raw material, the particle size range of the original copper powder particles is 0.3-1.5 μm, a polished single crystal silicon wafer is selected as the substrate, helium is used as the carrier gas, and the gas pressure during spraying is 0.1MPa, the gas preheating temperature is 200°C, the spraying distance is 5mm, and the copper film is prepared on the single crystal silicon wafer by the controlled atmosphere cold spraying, the film thickness is about 10μm, Figure 4 It is a cross-sectional SEM photo of the copper thin film. From the cross-sectional morphology of the prepared copper thin film, it can be seen that the copper thin film is uniform, continuous, well bonded to the substrate, and has no cracks.

Embodiment 2

[0046] In this embodiment, spherical submicron pure copper powder is selected as the raw material, the particle size range of the original copper powder particles is 0.3-1.5 μm, a polished single crystal silicon wafer is selected as the substrate, helium is used as the carrier gas, and the gas pressure during spraying is 0.1MPa, the gas preheating temperature is 100°C, the spraying distance is 5mm, and the copper film is prepared on the single crystal silicon wafer by controlled atmosphere cold spraying, and the film thickness is about 7μm.

Embodiment 3

[0048]In this embodiment, spherical submicron pure copper powder is selected as the raw material, the particle size range of the original copper powder particles is 0.3-1.5 μm, a polished single crystal silicon wafer is selected as the substrate, helium is used as the carrier gas, and the gas pressure during spraying is 0.1MPa, the gas preheating temperature is 200°C, the spraying distance is 10mm, and the copper thin film pattern is prepared on the single crystal silicon wafer by controlled atmosphere cold spraying. The single line width of the pattern is 0.14±0.02mm, and the thickness is about 4μm. Figure 5 It is a photo of the copper thin film pattern. From the overall appearance of the prepared copper pattern, it can be seen that the copper pattern lines are uniform and continuous, and various required two-dimensional copper thin film patterns can be prepared according to requirements.

Images