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A preparation method of flexible copper indium gallium selenide/perovskite tandem solar cell

A technology of solar cells and copper indium gallium selenide, applied in the field of solar cells, can solve the problems of incapable of large-scale preparation and realization, and no study of photovoltaic characteristics, so as to improve the fill factor and photoelectric conversion efficiency, which is conducive to low-cost industrial production, The effect of improving job stability

Active Publication Date: 2019-08-13
UNIV OF SCI & TECH BEIJING
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Problems solved by technology

[0003] The Mitzi research group first studied the organometallic halide CH in 1999 3 NH 3 wxya 3 The photoelectric properties of the material, and applying it to transistors and photodiodes, have obtained good photoelectric properties, but have not studied their photovoltaic properties (KaganC R and Mitzi D B, et al.Science, 1999, 286(5441): 945 -947)
In 2006, Kojima et al. reported for the first time a solar cell using organic / inorganic composite perovskite as a light-absorbing layer at the ECS conference. They were surprised to find that the light absorption rate of this perovskite material is 10 times that of ordinary dyes. A very thin film can absorb all the energy of the corresponding spectrum, but at that time the highest efficiency of this cell was only 2% (Liu D and Kelly T L. Naturephotonics, 2014, 8(2): 133-138)
In 2009, this research group reported a perovskite-sensitized cell with an efficiency of only 3.8% (Kojima A and Teshima K, et al. Journal of the American Chemical Society, 2009, 131(17): 6050-6051)
Although many attempts have been reported to fabricate perovskite / CiGaSe tandem solar cells, either spin-coating and other preparation methods cannot be prepared and realized on a large scale, or the cell structure contains expensive spiro-OMeTAD as a hole transport material

Method used

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  • A preparation method of flexible copper indium gallium selenide/perovskite tandem solar cell
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  • A preparation method of flexible copper indium gallium selenide/perovskite tandem solar cell

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Embodiment 1

[0029] a) First, the stainless steel foil was ground and polished; then deionized water, absolute ethanol and acetone were used for ultrasonic treatment for 15 min; b) Mo was deposited on the stainless steel foil (1) by magnetron sputtering as a CIGS solar cell Back electrode, the parameters are as follows: sputtering power 120W, sputtering pressure 0.4~1.2Pa, sputtering time 15~30min, equipment vacuum 10 - 4 Pa, target base distance 50mm, substrate temperature 50-250°C, Ar flow rate 20-80sccm, the thickness of the prepared back electrode is 1000-1500nm; c) Cu-In-Ga(CIG) precursor is prepared by magnetron sputtering The preset layer, the ratio of each element in the alloy target is Cu:In:Ga=1:0.6:0.2, and the prepared CIG precursor preset layer and selenium powder are respectively placed in two temperature zones of a tube furnace with two temperature zones. In the area, argon protection is introduced. During the heating process, the temperature is first slowly raised to 250...

Embodiment 2

[0033] a) Grind and polish the stainless steel foil first; then use deionized water, absolute ethanol and acetone to ultrasonically treat each for 15 minutes; b) use magnetron sputtering to deposit a layer of 1500nm thick Mo is used as the back electrode of CIGS solar cells; c) Cu-In-Ga (CIG) precursor pre-preparation layer is prepared by magnetron sputtering, and the ratio of each element in the alloy target is Cu:In:Ga=1:0.8:0.4 , the parameters are as follows: equipment vacuum 10 -4 Pa, the gas pressure of Ar is 0.5Pa. The sputtering power is 90-150W, and the sputtering time is 5-30min. Put the prepared CIG precursor pre-layer and selenium powder into the two temperature zones of the dual-temperature zone tube furnace respectively, and pass in argon protection. Then rapidly raise the temperature to a high temperature of 500-600° C. for 20-40 minutes of selenization, thereby preparing a CIGS film with a thickness of 2-5 μm; d) Deposit a layer on the copper indium gallium...

Embodiment 3

[0037] a) Grind and polish the stainless steel foil first; then use deionized water, absolute ethanol and acetone to ultrasonically treat each for 15 minutes; b) use magnetron sputtering to deposit a layer of 1500nm thick Mo is used as the back electrode of CIGS solar cells; c) Cu-In-Ga (CIG) precursor pre-preparation layer is prepared by magnetron sputtering, and the ratio of each element in the alloy target is Cu:In:Ga=1:0.7:0.3 , put the prepared CIG precursor pre-layer and selenium powder into the two temperature zones of the dual-temperature zone tube furnace respectively, and pass in argon protection. , and then rapidly heated to a high temperature of 550° C. for 30 minutes of selenization, thereby preparing a CIGS film with a thickness of 5 μm; d) depositing a layer with a thickness of 60 to 100 nm on the copper indium gallium selenide absorbing layer (3) by magnetron sputtering CdS buffer layer. The parameters are as follows: sputtering power 120W, sputtering pressure...

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Abstract

The invention discloses a method for preparing a flexible copper indium gallium selenide / perovskite stacked solar cell, which belongs to the technical field of solar cells and energy. The flexible copper indium gallium selenide / perovskite tandem solar cell of the present invention is sequentially composed of a stainless steel foil (SS) substrate (1), a metal back electrode (2), a copper indium gallium selenide absorbing layer (3), and a CdS buffer layer (4), a window layer (5), an intermediate compound layer (6), a hole transport layer (7), a perovskite phase absorption layer (8), an electron transport layer (9) and a transparent electrode (10). The battery with this structure is conducive to the balanced extraction of charges, suppresses the hysteresis effect of the current-voltage curve, and improves the filling factor and photoelectric conversion efficiency of the battery; and the all-inorganic material structure improves the working stability of the battery. The copper indium gallium selenide layer is prepared by magnetron sputtering and selenization, and the perovskite layer is prepared by spraying and semi-vapor deposition. This method is beneficial to large-scale production and preparation of large-area solar cells.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to a flexible copper indium gallium selenide / perovskite laminated solar cell and a preparation method thereof. Background technique [0002] In recent years, environmental pollution has seriously threatened the development of society and economy and the survival of everyone. Today, when the global fossil energy is increasingly depleted and environmental pollution is increasing, solar energy will become an ideal choice for non-renewable energy such as oil, coal, and natural gas together with other new energy sources (fuel cells, hydrogen energy, lithium-ion batteries, bio-energy, etc.) Supplementary and alternative energy sources. With the rapid development of the photovoltaic industry, the conversion efficiency of solar cells has been continuously improved and the cost has been continuously reduced, making the prospect of photovoltaic power generation brighter and broader. The d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K30/152H10K30/15Y02E10/549Y02P70/50
Inventor 田建军李梦洁李波
Owner UNIV OF SCI & TECH BEIJING
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