Polymer surface treatment method
A processing method and polymer technology, applied in the direction of plating, ion implantation plating, coating, etc. of superimposed layers, can solve the problems of difficult fire control, easy explosion, high water and energy consumption, etc., and achieve improved scratch resistance Friction and corrosion resistance, improve wear resistance and anti-corrosion performance, increase the effect of film performance
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Embodiment 1
[0031] In the present embodiment, the PC substrate surface is processed as follows sequentially:
[0032] (1) First, the surface of the PC substrate is bombarded with an oxygen ion beam to form a carbon-oxygen double bond polar group on the surface. The bombardment process parameters are: oxygen flow rate 50sccm, linear ion beam current 0.2A, substrate bias voltage -100V, bombardment time 8min.
[0033] (2) A chromium nitride film layer is deposited by intermediate frequency magnetron sputtering with a thickness of 3 μm, and the temperature is kept below 70° C. during the deposition process. The deposition process parameters are: argon gas flow rate 50 sccm, nitrogen gas flow rate 20 sccm, chromium target sputtering current 3A, deposition time 180 min, cooling six times during deposition, each cooling time 10 min.
[0034] (3) The chromium film is deposited by arc ion plating, and the deposition time is 1 min. The deposition process parameters are: argon gas flow rate 100 sc...
Embodiment 2
[0038] In the present embodiment, the PMMA substrate surface is processed as follows successively:
[0039] (1) First, nitrogen ion beams are used to bombard the surface of the PMMA substrate to form amino groups on the surface. The bombardment process parameters are: nitrogen flow rate 50 sccm, linear ion beam current 0.2A, substrate bias voltage -100V, and bombardment time 8 min.
[0040](2) A titanium nitride film is deposited by high-power pulsed magnetron sputtering, the thickness of which is 2 μm, and the temperature is kept below 70° C. during the deposition process. The deposition process parameters are: argon gas flow rate 50 sccm, nitrogen gas flow rate 20 sccm, titanium target pulse voltage 1000 V, pulse frequency 200 Hz, pulse width 200 μs, deposition time 120 min, cooling four times during deposition, each cooling time 10 min.
[0041] (3) The chromium film is deposited by arc ion plating, and the deposition time is 1 min. The deposition process parameters are: ...
Embodiment 3
[0045] In the present embodiment, the surface of the ABS substrate is sequentially processed as follows:
[0046] (1) First, the surface of the ABS substrate is bombarded with an oxygen ion beam to form a carbon-oxygen double bond polar group on the surface. The bombardment process parameters are: oxygen flow rate 50sccm, linear ion beam current 0.2A, substrate bias voltage -100V, bombardment time 8min.
[0047] (2) The aluminum titanium nitrogen film layer was deposited by DC magnetron sputtering, and Ar ion beam assisted deposition was used to make the film thickness to 2 μm, and the temperature was kept below 70°C during the deposition process. The deposition process parameters are: argon gas flow rate 50 sccm, nitrogen gas flow rate 20 sccm, aluminum-titanium target atomic ratio 67:33, target sputtering current 3A, deposition time 120 min, cooling four times during deposition, each cooling time 10 min.
[0048] (3) The chromium film is deposited by arc ion plating, and th...
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