Hole transport layer containing organic conjugated polymer semiconductor material and application thereof

A technology of hole transport layer and conjugated polymer, which is applied in the field of electronic devices with photoelectric conversion characteristics, can solve the problems of time consumption, achieve the effects of improving performance, simplifying structure and synthesis, and reducing costs

Active Publication Date: 2017-11-21
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the highest efficiency of doped-free polymer HTM has reached 17.3%, these high-efficiency polymer materials either have a relatively complex molecular structure, or are relatively time-consuming due to the need for multi-step synthesis operations, so they have short synthetic routes. A polymer HTM with a simple structure would be ideal

Method used

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  • Hole transport layer containing organic conjugated polymer semiconductor material and application thereof
  • Hole transport layer containing organic conjugated polymer semiconductor material and application thereof
  • Hole transport layer containing organic conjugated polymer semiconductor material and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Synthesis of conjugated polymer DTB based on p-alkoxybenzene and dithiophene:

[0053] Synthetic route such as figure 1 Shown. First, the H atom in the -OH group of p-phenylene glycol is replaced with an alkyl group, and then the product is copolymerized with the distannide of dithiophene to obtain the target polymer DTB.

[0054] Product B: Raw material A (2.0 g) and anhydrous potassium carbonate (4.13 g) were added to a pre-dried 250 ml flask, followed by vacuum and argon filling operations, and repeated twice. Then DMF (37 ml) was added, and bromoisooctane (3.6 g) was added all at once after the mixed system was dissolved. After that, the flask was stirred at 100°C for 20 hours. After the reaction system is cooled to room temperature, it is concentrated using a rotary evaporator, and then the organic layer is extracted, washed with water, and concentrated. Finally, the product is further purified by silica gel column chromatography to obtain the final product. 2.3 gra...

Embodiment 2

[0057] Preparation of photoelectric devices containing polymer DTB

[0058] Preparation with FTO / c-TiO 2 / m-TiO 2 / Perovskite / HTL / Au structure photoelectric devices, such as Figure 2a As shown (which is specifically a schematic diagram of the formal structure of a perovskite solar cell), where FTO (fluorine-doped tin oxide) is the bottom layer; c-TiO 2 / m-TiO 2 Dense TiO without pinholes 2 Layer and mesoporous TiO 2 Layer; HTL is a hole transport layer, which is the hole transport layer of DTB.

[0059] The manufacturing process of optoelectronic devices is summarized as follows:

[0060] First, clean the FTO glass (Nippon Sheet Glass) with detergent, deionized water, acetone and ethanol, and ultrasonically treat it in an ultrasonic bath for 30 minutes. After that, the FTO glass was treated in an ultraviolet ozone device for 30 minutes. Prepare 0.15M diisopropoxylate bis(acetylacetone) diacetate in n-butanol solution, then use spin coating method to coat the cleaned FTO glass at 20...

Embodiment 3

[0062] Preparation of photoelectric devices containing polymer DTB

[0063] Preparation of optoelectronic devices with ITO / HTL / perovskite / PCBM / BCP / Ag structure, such as Figure 2b As shown (which is specifically a schematic diagram of the trans structure of a perovskite solar cell). Among them, ITO (indium-doped tin oxide) is the bottom layer; HTL is the hole transport layer, which is the hole transport layer of DTB; PCBM is a fullerene derivative; BCP is 2,9-dimethyl-4, 7-Biphenyl-1,10-phenanthroline.

[0064] The manufacturing process of optoelectronic devices is summarized as follows:

[0065] First, clean the ITO glass (Nippon Sheet Glass) with detergent, deionized water, acetone and ethanol, and ultrasonically treat it in an ultrasonic bath for 30 minutes. After that, the ITO glass was treated in an ultraviolet ozone device for 30 minutes. DTB was dissolved in chlorobenzene (30 mg / ml) and preheated at 80°C to prepare a hole transport layer (HTL) by spin-coating the DTB soluti...

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Abstract

The invention discloses a hole transport layer containing an organic conjugated polymer semiconductor material and application thereof. The repeating unit of the main chain of the organic conjugated polymer semiconductor material is composed of a p-alkoxybenzene unit and an aromatic ring unit; and the organic conjugated polymer has a structural formula as described in the specification. In the structural formula, each of R1 and R2 is one or a combination of at least two selected from a group consisting of C1-C20 alkyl groups; and Ar is an aromatic ring group. According to the invention, p-alkoxybenzene [B(bisOR)] is used for construction of the polymer, so the structure and synthesis of the organic conjugated polymer used for a conjugated polymer-based hole transport material, and cost can be reduced; the high planarity of a B(bisOR) derivative unit and weak steric hindrance of adjacent units are beneficial for hole transport; and the polymer containing the B(bisOR) unit has a proper energy level relative to a perovskite material, so collection of photo-generated holes is promoted and compounding of photo-induced electrons is prevented.

Description

Technical field [0001] The present invention relates to a hole transport layer containing organic conjugated polymer semiconductor material and its use, in particular to a hole transport layer containing organic conjugated polymer semiconductor material and its application in perovskite solar cells and other photo-electric Conversion characteristics of electronic devices. Background technique [0002] As one of the most widely studied photovoltaic technologies, perovskite solar cells (PSC) have many unique properties of perovskite materials, such as high absorption coefficient, low exciton binding energy, and excellent hole and electron conduction. Ability, etc., has made considerable progress since its inception in 2009. [0003] At present, the highest efficiency of PSC is 22.1%, which is based on 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene ( Spiro-OMeTAD) is a hole transport material (HTM) device. However, Spiro-OMeTAD has a relatively low intrinsic co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G61/12H01L51/50H01L51/54
CPCC08G61/126C08G2261/1424C08G2261/124C08G2261/3223C08G2261/228C08G2261/354C08G2261/91H10K85/00H10K50/15C08G2261/312C08G2261/364C08G2261/414C08G2261/512Y02E10/549H10K85/113H10K85/151H10K30/151H10K30/211H10K85/50
Inventor 徐保民张罗正刘畅张杰
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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