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Method for preparing aluminum nitride electronic ceramic base plate by using tape casting method and solvent for tape casting method for preparing ceramic

A technology of aluminum nitride ceramics and electronic ceramics, applied in the field of ceramic materials, can solve problems such as operator's physical harm and environmental pollution, and achieve the effects of huge environmental protection benefits, improvement of operating conditions, and reduction of industrialized energy consumption ratio.

Active Publication Date: 2017-12-29
李军廷
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Tape casting using traditional solvents containing benzene rings has the advantage of suitable solvent vapor pressure and volatilization rate is suitable for casting process equipment, but the volatilization of its contents will pollute the environment and harm the body of operators.

Method used

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  • Method for preparing aluminum nitride electronic ceramic base plate by using tape casting method and solvent for tape casting method for preparing ceramic
  • Method for preparing aluminum nitride electronic ceramic base plate by using tape casting method and solvent for tape casting method for preparing ceramic
  • Method for preparing aluminum nitride electronic ceramic base plate by using tape casting method and solvent for tape casting method for preparing ceramic

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0092] The aluminum nitride ceramic substrate is prepared by benzene-free casting method, and the steps are as follows:

[0093] (1) Take 122.97g of AIN powder, and the measured oxygen content of the powder is 1.52at%. Because the powder contains other metal oxides and oxygen impurities, other oxygen content is deducted in this calculation. According to the addition rule of yttrium ion, it is The ratio of the molar mass to the oxygen content of the aluminum nitride powder is (0.3~0.6):(M-A-B), where M is the measured oxygen content of the aluminum nitride powder, and A is the oxygen content of the metal oxide in the aluminum nitride ceramic powder , B is the oxygen content of other sintering aids; preferably 0.5:(M-A-B), the amount of yttrium ions or lanthanide rare earth ions to be added is calculated to be 0.01844mol, wherein the molar ratio of yttrium ions to praseodymium ions is 0.8:0.2, join Y 2 o 3 Powder 3.33g, Pr 2 o 3 Powder 1.22g, in order to make this part of th...

Embodiment 2

[0109] (1) Take 122.97g of AIN powder, and the measured oxygen content of the powder is 1.52at%. Because the powder contains other metal oxides and oxygen impurities, other oxygen content is deducted in this calculation. According to the addition rule of yttrium ion, it is The ratio of the molar mass to the oxygen content of the aluminum nitride powder is (0.3~0.6):(M-A-B), where M is the measured oxygen content of the aluminum nitride powder, and A is the oxygen content of the metal oxide in the aluminum nitride ceramic powder , B is the oxygen content of other sintering aids; preferably 0.6:(M-A-B), the total amount of yttrium ions or lanthanide rare earth ions to be added is calculated to be 0.03074mol, and the molar ratio of yttrium ions to dysprosium ions is 0.5:0.5 , join Y 2 o 3 Powder 3.47g, Dy 2 o 3 Powder 5.733g, in order to make this part of oxygen ions can form Y with enough yttrium ions or lanthanide rare earth ions 3 Al 5 o 12 Spinel or lanthanide spinel ph...

Embodiment 3

[0123] (1) Take 131.17g of AIN powder, and the measured oxygen content of the powder is 1.52at%. After calculation, the total amount of yttrium ions or lanthanide rare earth ions to be added is 0.0276mol, and the molar ratio of yttrium ions to ytterbium ions is 0.3 :0.7, join YF 3 Powder 1.208g, Yb 2 o 3 Powder 7.614g, in order to make this part of oxygen ions can form Y with enough yttrium ions or lanthanide rare earth ions 3 Al 5 o 12 Spinel or lanthanide spinel phase, and then add 1.2wt% of aluminum nitride powder and 1.57g of CaO powder.

[0124] (2) Then according to the designed 38.5Vol% volume ratio solid content, add absolute ethanol 12g, isopropanol 5.4g, n-butanol 3.95g, triethyl phosphate 8.33g, dibasic acid ester mixture 4.5g.

[0125] (3) After adding 2.08 g of polyoxyethylene sorbitol ester as a dispersant and 1.5 g of fish oil, put the above-mentioned powder and solvent into a ball milling tank, and set the ball milling speed to 240 rpm for a ball milling t...

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Abstract

The invention discloses a method for preparing an aluminum nitride electronic ceramic base plate by using a tape casting method. The method comprises the following steps: preparing tape casting slurry, and molding the tape casting slurry by using the tape casting method, thereby obtaining the aluminum nitride electronic ceramic base plate, wherein the tape casting slurry comprises a benzene-free mixed organic solvent, aluminum nitride ceramic powder and sintering aids; the benzene-free mixed organic solvent comprises three or more than three of absolute ethyl alcohol, isopropyl alcohol, n-butyl alcohol, triethyl phosphate and dibasic acid ester; and the solvent accounts for 28-40% of the mass of the aluminum nitride ceramic powder. The invention further provides a method for preparing high-solid content aluminum nitride tape casting by using an organic solvent which is non-toxic, relatively environmentally friendly and low in cost. The aluminum nitride electronic ceramic base plate which is high in density, uniform in microstructure and high in heat conductivity is prepared under a relatively low high temperature condition, and the tape casting production process is green and environmentally friendly and applicable to industrial popularization.

Description

technical field [0001] The invention belongs to the field of ceramic materials, and in particular relates to a method for preparing an aluminum nitride electronic ceramic substrate by using a casting method. Background technique [0002] Aluminum Nitride Ceramic is a ceramic whose main crystal phase is aluminum nitride (AIN). With the development of a new generation of large-scale integrated circuits, semiconductor module circuits and high-power LED lighting devices, it has a high thermal conductivity (the theoretical value of single crystal is 320W / m K) and a thermal expansion coefficient suitable for gallium arsenide crystals (4.5 ×10 -6 / K), high strength, high volume resistivity, high insulation withstand voltage and low dielectric loss aluminum nitride materials have great advantages in the fields of IGBT and fourth-generation LED lighting source circuit bearings and heat dissipation substrates, and are increasingly used Extensive, the market demand will be more and m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/581C04B35/622
CPCC04B35/581C04B35/622C04B2235/3203C04B2235/3208C04B2235/3222C04B2235/3224C04B2235/3225C04B2235/3865C04B2235/445C04B2235/96C04B2235/9607
Inventor 李军廷陈根富周张健张家豪杨儒曹永强
Owner 李军廷
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