Manufacturing method of silicon carbide-based Schottky contact and manufacturing method of Schottky diode
A Schottky contact and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of reducing the adhesion between the titanium layer and the aluminum layer, increasing the surface resistivity of the titanium, and the aluminum layer falling off. To prevent pollution and natural oxidation, prevent organic matter and particle pollution, and avoid the formation of high-resistance layers
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0086] according to figure 1 The flow chart shown makes the Schottky metal contact, and the specific steps are as follows:
[0087] ① Sputter titanium on the surface of silicon carbide wafer at room temperature, the titanium sputtering rate is 4nm / min, and the target sputtering thickness is 200nm.
[0088] ②After reaching the target sputtering thickness, heat the silicon carbide wafer. The temperature rise rate of the silicon carbide wafer is 20°C / sec, and the temperature is raised to 450°C and maintained at this temperature for 5 minutes. During this process, the Ti / SiC contact interface thermal reaction Generate TiC and Si atomic layers to form a good Schottky contact. After the thermal reaction is completed, argon gas is introduced to cool the silicon carbide wafer to room temperature naturally.
[0089] ③After cooling down to room temperature, aluminum is sputtered on the surface, the aluminum sputtering rate is 200nm / min, and the target sputtering thickness is 4000nm. ...
Embodiment 2
[0096] The silicon carbide Schottky diode is manufactured by the method provided by the invention, and the specific steps are as follows.
[0097] 1) Growth of N-drift layer ( image 3 ): Epitaxial growth on N+ silicon carbide substrate with a thickness of 10 μm and a nitrogen doping concentration of 5×10 15 cm -3 The N-type drift layer; the epitaxy temperature is 1550°C, the reaction gas is silane and propane, the carrier gas is hydrogen, and the impurity source is nitrogen.
[0098] 2) Growth of ion implantation barrier layer ( Figure 4 ): A layer of SiO is grown on the surface of the N-type drift layer by PECVD 2 , with a thickness of 2 μm.
[0099] 3) Etching the ion implantation barrier layer ( Figure 5 ): on SiO 2 The surface is uniformly coated with photoresist, and SiO is fabricated on the surface of the Schottky area by photolithography and etching. 2 , as a barrier to ion implantation in this region. where the etching gas is CF 4 .
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More