Pouring sealant for integrated circuit board and preparation method thereof
A technology for integrated circuit boards and potting glue, applied in the field of potting glue, can solve the problems of affecting fluidity and mechanical properties, poor flame retardancy and bonding performance, affecting the scope of application, etc., to improve mechanical properties and chemical stability. The effect of strong adhesion, strong adhesion and low equipment requirements
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Embodiment 1
[0032] A potting compound for an integrated circuit board is composed of component A and component B in a weight ratio of 1:1,
[0033] The A component includes the following raw materials in weight percentage: 10 parts of surface-modified silicon-doped nano-diamonds, 60 parts of activated polyurethane;
[0034] The B component includes the following raw materials in weight percentage: 60 parts of dimethyl hydroxy silicone oil, 8 parts of triethylamine;
[0035] Wherein the preparation method of the surface-modified silicon-doped nano-diamond comprises the following steps:
[0036] 1) Silicon-doped nano-diamonds: add 30 g of dried nano-diamonds and 20 g of polydimethylsiloxane to 100 g of ethanol, ultrasonicate for 1 hour, then bake in a vacuum oven at 60°C for 10 hours; Calcined at 550°C under atmosphere to obtain silicon-doped nano-diamond;
[0037] 2) Silicon-doped nano-diamond surface modification: Disperse 30 g of silicon-doped nano-diamond prepared in step 1) in 150 g ...
Embodiment 2
[0044]A kind of encapsulant for integrated circuit board is composed of A component and B component with a weight ratio of 1:1.2,
[0045] The A component includes the following raw materials in weight percentage: 14 parts of surface-modified silicon-doped nano-diamonds, 66 parts of activated polyurethane;
[0046] The B component includes the following raw materials in weight percentage: 68 parts of dimethyl hydroxy silicone oil, 10 parts of triphenylphosphine;
[0047] Wherein the preparation method of the surface-modified silicon-doped nano-diamond comprises the following steps:
[0048] 1) Silicon-doped nano-diamonds: add 40 g of dried nano-diamonds and 20 g of polydimethylsiloxane to 125 g of ethanol, ultrasonicate for 1.6 hours, then bake in a vacuum oven at 69°C for 15 hours; Calcined at 550°C under air atmosphere to obtain silicon-doped nano-diamond;
[0049] 2) Surface modification of silicon-doped nano-diamonds: Disperse 39 g of silicon-doped nano-diamonds prepared...
Embodiment 3
[0056] A kind of encapsulant for integrated circuit board is composed of A component and B component with a weight ratio of 1:1.5,
[0057] The A component includes the following raw materials in weight percentage: 16 parts of surface-modified silicon-doped nano-diamonds, 72 parts of activated polyurethane;
[0058] The B component includes the following raw materials in weight percentage: 72 parts of dimethyl hydroxy silicone oil, 11 parts of benzyl tributyl ammonium bromide;
[0059] Wherein the preparation method of the surface-modified silicon-doped nano-diamond comprises the following steps:
[0060] 1) Silicon-doped nano-diamonds: Add 43 g of dried nano-diamonds and polydimethylsiloxane to 20 g of ethanol, ultrasonicate for 1.7 hours, then bake in a vacuum oven at 72°C for 17 hours; Calcined at 550°C under atmosphere to obtain silicon-doped nano-diamond;
[0061] 2) Silicon-doped nano-diamond surface modification: Disperse 40 g of silicon-doped nano-diamond prepared in...
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