Photosensitive resin composition and method for manufacturing semiconductor device
A technology of photosensitive resin and composition, which is applied in the field of photosensitive resin composition, can solve the problems of uneven ion density, semiconductor equipment performance and yield reduction, etc., and achieve the effects of process saving, high productivity and high yield
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Embodiment 1~2 and comparative example 1~3
[0145] In Examples 1 to 2 and Comparative Examples 1 to 3 below, a photosensitive resin composition was prepared, and after forming a coating film on a SiC substrate, pattern-forming exposure, development, and calcination of ultraviolet light were performed to obtain the resulting composition. Ion implantation is patterned using a mask. In addition, regarding these Examples and Comparative Examples, evaluations were performed on whether or not pattern formation was possible, whether there was pattern residue after thermal sintering, and whether there was any problem due to charging during ion implantation.
Embodiment 1
[0147] (Production of boron (B) doped silicon particles)
[0148] Silicon nanoparticles are produced by a laser pyrolysis (LP: Laser pyrolysis) method using a carbon dioxide laser using monosilane gas as a raw material. At this time, together with monosilane gas, diborane (B 2 h 6 ) gas to obtain boron-doped silicon particles. The particles had a particle diameter of 20 nm.
[0149] The doping concentration of the obtained boron-doped silicon particles is 1×10 21 atoms / cm 3 . In addition, when the metal impurity content of the obtained boron-doped silicon particles was measured by an inductively coupled plasma mass spectrometer (ICP-MS), the content of Fe was 15 ppb, the content of Cu was 18 ppb, the content of Ni was 10 ppb, and the content of Cr was 21 ppb. , the content of Co is 13ppb, the content of Na is 20ppb, and the content of Ca is 10ppb.
[0150] (Preparation of solution containing boron-doped silicon particles)
[0151] A solution containing boron-doped sili...
Embodiment 2
[0175] As the photosensitive resin composition, instead of mixing a negative photoresist (CTP-100T, manufactured by Merck Paphores Massons Materials Manyufacturing Co., Ltd.), and the above-mentioned solution containing boron-doped silicon particles, a negative photoresist ( CTP-100T, manufactured by Mercury Paphores Massons Materials Manufacturing Co., Ltd.), the solution of the above-mentioned boron-doped silicon particles, and spin-silicon oxide (12000-T, manufactured by Tokyo Ohka Industry Co., Ltd.), in addition, In the same manner as in Example 1, a mask layer was formed on the SiC substrate. At this time, the photosensitive resin composition was prepared so that in the solid content of the photosensitive resin composition after mixing, boron-doped silicon nanoparticles accounted for 10% by weight, and the solid content contained in the spin-synthesized silica solution accounted for 10% by weight. weight%.
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