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Condensed-ring n-type polymer with main chain containing cyano indanone and application of condensed-ring n-type polymer

A technology of cyanoindanone and polymer, which is applied in the field of polymer optoelectronic materials, can solve the problems of insufficient absorption spectrum and low absorption coefficient, and achieve the goals of improving photocurrent and battery device efficiency, increasing absorption coefficient, and optimizing short-circuit current Effect

Pending Publication Date: 2019-05-14
东莞伏安光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main reason is that the absorption coefficient of the existing receptors is not high and the absorption spectrum is not wide enough.

Method used

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  • Condensed-ring n-type polymer with main chain containing cyano indanone and application of condensed-ring n-type polymer
  • Condensed-ring n-type polymer with main chain containing cyano indanone and application of condensed-ring n-type polymer
  • Condensed-ring n-type polymer with main chain containing cyano indanone and application of condensed-ring n-type polymer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Embodiment 1: the preparation of polymer P1~P5

[0040] Add monomer M1 (0.5 mmol) and monomer M4 (0.5 mmol) into a 25 mL two-necked flask, pass through nitrogen protection, and add 8 mL of toluene. Add 5mg Pd(PPh 3 ) 4 , After reacting at 95°C for 12h, the polymer was precipitated with methanol and washed three times. Obtain dark colored polymer P1, yield 85.7%, 1HNMR(CDCl3 500MHz):δ:7.00-7.48(m,18H),4.13-3.50(m,8H),1.05-1.30(br,112H),0.87(t,12H).GPC:Mn=27.8kDa,Mw = 70.3 kDa, PDI = 2.53. Elem. Anal.: C, 77.05; H, 8.45; N, 2.90; O, 1.66; S, 9.95. The reaction formula is as follows:

[0041]

[0042] Add monomer M2 (0.5mmol) and monomer M4 (0.5mmol) into a 25mL two-necked flask, pass through nitrogen protection, and add 12mL of toluene. After pumping twice, add 7mg of Pd(PPh3)4, react at 95°C for 12h, precipitate the polymer with methanol, and wash three times. Obtain dark colored polymer P2, yield 84.9%, 1 HNMR(CDCl3 500MHz):δ:7.02-7.48(m,16H),4.12-3.60(m,14H)...

Embodiment 2

[0051] Embodiment 2: Polymer P1, P2, P3 (the AB component is the same in the structure) is used in the organic photovoltaic device (ITO negative electrode / cathode interface layer / active layer / positive machine interface layer / anode) as electron acceptor

[0052] Pre-cut the ITO conductive glass with a square resistance of 20 ohms / cm2 into 15mm×15mm square pieces. Use acetone, special detergent for micron-sized semiconductors, deionized water, and isopropanol to clean ultrasonically in sequence, blow nitrogen whistle, and place in a constant temperature oven for later use. Spin-coat a layer of PFN-Br with a thickness of 5nm on the ITO, and then spin-coat the active layer materials PTB7-Th / P1, PTB7-Th / P2, PTB7-Th / P3 (the mass ratio of the donor PTB7-Th to the acceptor Both are 1:2), the thickness is 110 nm, and MoO is finally evaporated 3 and Al electrodes. All preparations were carried out in a glove box under a nitrogen atmosphere. The current-voltage curves of the fabricate...

Embodiment 3

[0053] Embodiment 3: Polymer P1, P2, P3 (the AB component is the same in the structure) is used in organic photovoltaic device (ITO anode / anode interface layer / active layer / cathode interface layer / cathode) as electron acceptor

[0054] Pre-cut the ITO conductive glass with a square resistance of 20 ohms / cm2 into 15mm×15mm square pieces. Use acetone, special detergent for micron-sized semiconductors, deionized water, and isopropanol to clean ultrasonically in sequence, blow nitrogen whistle, and place in a constant temperature oven for later use. Spin-coat a layer of 20nm thick PEDOT:PSS (poly-3,4-ethylenedioxythiophene / polystyrene sulfonate) on ITO, and then spin-coat active layer materials PTB7-Th / P1, PTB7-Th / P2 , PTB7-Th / P3 (in which the mass ratio of donor PTB7-Th and acceptor is 1:2), and the thickness is 100 nm. Then spin-coat a layer of PFN-Br with a thickness of 5nm, and finally evaporate Al electrodes. All preparations were carried out in a glove box under a nitrogen...

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Abstract

The invention belongs to the field of high polymer photoelectric materials and discloses a condensed-ring n-type polymer with a main chain containing cyano indanone and application of the condensed-ring n-type polymer. A structural formula of the condensed-ring n-type polymer is as shown in the specification, wherein n refers to a positive integer greater than 3 and less than 1 million; R2, R2, R3and R4 refer to alkyl chains; A and C refer to conjugated unit structures; B refers to an aromatic ring. The condensed-ring n-type polymer with the main chain containing cyano indanone is high in absorption coefficient and capable of remarkably improving light current and efficiency of battery devices when serving as an electron acceptor; serving as the electron acceptor, the condensed-ring n-type polymer with the main chain containing cyano indanone is capable of realizing excellent short-circuit current, open-circuit voltage and fill factors, and full-polymer photovoltaic devices in energyexchange efficiency higher than 10% can be prepared from the condensed-ring n-type polymer and are much superior to batteries based on existing acceptors.

Description

technical field [0001] The invention belongs to the field of macromolecule photoelectric materials, in particular to a condensed ring n-type polymer containing cyanoindanone in the main chain and an application thereof. Background technique [0002] With the increasing global demand for energy, the depletion of traditional energy sources such as oil and coal, and the need to protect the earth's ecological environment, more and more scientists around the world are focusing their research on inexhaustible hydrogen, solar energy, etc. Inexhaustible renewable clean energy. [0003] Mature photovoltaic devices based on inorganic materials such as inorganic silicon, gallium arsenide, and indium phosphide have dominated the market. However, due to their high requirements for material purity, high energy consumption and pollution will occur during processing. And its price is very expensive, so its large-scale application is limited in today's pursuit of low cost and environmental ...

Claims

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Application Information

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IPC IPC(8): C08G61/12H01L51/42H01L51/46
CPCY02E10/549
Inventor 应磊胡志诚黄飞曹镛
Owner 东莞伏安光电科技有限公司
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