Preparation for catalyst-silicon carbide reactor for preparing ethylene through ethane dehydrogenation

A technology of silicon carbide and reactors, applied in the direction of physical/chemical process catalysts, hydrocarbons, hydrocarbons, etc.

Active Publication Date: 2019-06-07
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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Problems solved by technology

[0004] With the increasing shortage of petroleum resources, the use of abundant sources and cheap ethane dehydrogenation to produce ethylene can avoid the petroleum route, so people are paying more and more attention to it. Although ethane dehydrogenation to ethylene has been industrialized , but due to the limitation of the thermodynamic equilibrium conversion rate, the process needs to be at a higher temperature to obtain the ideal yield, and under the industrial application conditions of large flow rate and low residence time, the heat transfer of the reaction system becomes an influence on the reactor. An important factor of temperature, the metal pipe system widely used now, can have a temperature difference of two hundred degrees between the outer wall temperature and the central temperature, which means the increase of energy consumption. If the temperature difference can be reduced, it is very beneficial to the prospect of industrialization

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  • Preparation for catalyst-silicon carbide reactor for preparing ethylene through ethane dehydrogenation
  • Preparation for catalyst-silicon carbide reactor for preparing ethylene through ethane dehydrogenation
  • Preparation for catalyst-silicon carbide reactor for preparing ethylene through ethane dehydrogenation

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preparation example Construction

[0035] Embodiment 1-12 is the preparation of lattice doping reactor; Embodiment 13-22 is impregnation method supported catalyst; Embodiment 23-32 is gas phase CVD method supported catalyst; Embodiment 33-38 is sol-gel Combined with the high temperature melting method to support the catalyst.

[0036] Catalyst loading methods include impregnation, chemical vapor deposition (MCVD) or sol-gel combined with high-temperature melting coating technology:

[0037] Impregnation method: at 1-3 atmospheric pressure, immerse the shaped silicon carbide reactor in the doped metal salt solution for 0.1-48 hours at a temperature of 20-80°C; then melt it at 1600-2200°C to obtain Corresponding inner wall metal lattice-doped reactor, then cooled immediately to obtain catalyst-reactor after solidification;

[0038] Chemical vapor deposition method: under 1-3 atmospheric pressure, silicon tetrachloride liquid is doped with volatile doped metal salt or non-metallic chlorine gas-doped at 50-500°C w...

Embodiment 1

[0050] Mix 1kg SiC powder, 300g high-purity graphite powder, 300g silicon powder, 20g ferric nitrate, 100mL epoxy resin, and 100mL water. The SiC powder is α-SiC with a particle size of 100-400nm and silicon powder with a particle size of 100μm. , sent to the extruder for extruded molding, the forming reactor is a straight tube, 2 meters in length, 35mm in outer diameter, 25mm in inner diameter, after 4 days of natural drying, it is sent to a 50°C muffle furnace to continue drying and dehumidification, and continue to dry in the N 2 Under the protection of , it was treated in a high-temperature furnace at 2000°C for 2 days, taken out after cooling down, and the surface of the reactor was finely polished to obtain reactor R1.

Embodiment 2

[0052] Mix 1kg SiC powder, 200g high-purity graphite powder, 200g silicon powder, 20g ferric chloride, 100mL epoxy resin, and 100mL water. The SiC powder is α-SiC with a particle size of 300-1000nm. 100 μm, sent to the extruder for extruded molding, the forming reactor is a straight tube type, 2 meters in length, 15mm in outer diameter, 5mm in inner diameter, after 4 days of natural drying, it is sent to a muffle furnace at 50°C to continue drying and dehumidification, and then Carry out pressing treatment, pressing pressure is 100Mpa, and pressing time is 30 minutes. continue at N 2 Under the protection of , it was treated in a high-temperature furnace at 2000°C for 3 days, taken out after cooling down, and the surface of the reactor was finely polished to obtain reactor R2.

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Abstract

The invention relates to preparation for a catalyst-silicon carbide reactor for preparing ethylene through ethane dehydrogenation and a method for catalyzing the ethane dehydrogenation to prepare theethylene under an oxygen-free condition. According to the reactor provided by the invention, a novel prepared silicon carbide material is used and good heat-conducting performance and chemical reaction inertia properties of the material are utilized; and based on the catalyst-reactor and reaction conditions, high-yield synthesis of the ethylene is realized through the process. According to the preparation and the method provided by the invention, the conversion rate of ethane is 70 to 100 percent, the selectivity of ethylene is 80 to 99.99 percent, the selectivity of propylene is 0 to 5 percent and the selectivity of aromatic hydrocarbons is 0 to 5 percent. The preparation and method provided by the invention have the characteristics of long catalyst service life (longer than 1000 h), goodstability of the catalyst at high temperature (lower than 1700 DEG C), high ethylene conversion rate and product selectivity, low energy consumption, good process repeatability, safety and reliability in operation and the like, and have wide industrial application prospects.

Description

technical field [0001] The invention relates to a novel catalyst-reactor based on silicon carbide material, which is successfully applied to the process of producing ethylene, aromatics and hydrogen by direct conversion of ethane. The process realizes high-efficiency conversion of ethane, high-selectivity synthesis of ethylene and zero carbon deposition, and has good catalyst stability, and belongs to the technical field of catalytic reactors. Background technique [0002] Ethylene is the basic chemical raw material for synthetic fibers, synthetic rubber, synthetic plastics (polyethylene and polyvinyl chloride), synthetic ethanol (alcohol), and is also used to manufacture vinyl chloride, styrene, ethylene oxide, acetic acid, acetaldehyde, Ethanol and explosives, etc. The ethylene industry is the core of the petrochemical industry. Ethylene products account for more than 70% of petrochemical products and occupy an important position in the national economy. Ethylene producti...

Claims

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Application Information

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IPC IPC(8): B01J19/02B01J19/00B01J27/224C07C5/333C07C11/04
CPCY02P20/52
Inventor 包信和方光宗潘秀莲吕厚甫谭大力
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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