Solar-blind ultraviolet detector, its manufacturing method and application

Abstract

The invention discloses a sun-blind ultraviolet detector, its manufacturing method and application. The detector includes: an array structure, which includes a plurality of microstructures arranged at intervals, and the microstructures are formed of broadband semiconductor materials; a high-mobility film, which is in electrical contact with one end surface of the array structure, And cooperate with the array structure to form a Schottky heterojunction; and an electrode, which is electrically connected with the high mobility film. The solar-blind ultraviolet detector of the present invention cooperates with high-mobility films such as graphene by using gallium oxide nanocolumn arrays, etc., to effectively increase the actual light-receiving area of ​​the device, promote the generation of electron-hole photogenerated carrier pairs, and increase the photocurrent , so as to effectively improve the device responsivity and reduce the relaxation time, which has great potential for reducing the size of the device and realizing the miniaturization and integration of the device.

Description

technical field [0001] The invention relates to a solar-blind ultraviolet detector, in particular to a solar-blind ultraviolet detector based on a Schottky heterojunction of nano-array gallium oxide and a high-mobility film and a preparation method thereof, belonging to the technical field of optical detection devices. Background technique [0002] Usually we call the photodetectors that detect light in the wavelength range of 200-280nm as solar-blind ultraviolet detectors. Because the use of solar-blind ultraviolet detectors is not interfered by sunlight, it has high sensitivity and can accurately detect light in any environment, so it is widely used in military, civilian and communication fields. In the military, it can detect the sun-blind ultraviolet light emitted by the tail flame of the missile for missile early warning. Compared with infrared detection technology, it has the advantages of high target detection accuracy and simple signal processing. In civilian use, i...

AI Technical Summary

Problems solved by technology

For the current UV detectors made of AlGaN materials, the forbidden band width of the photosensitive material can be adjusted by changing the Al composition, and the range is 3.4-6.2eV. However, when the Al composition is high, the quality of the AlGaN epitaxial film deteriorates seriously, resulting in At present, it is very difficult to grow AlGaN thin film with good quality, and its cost is also very high. It is only suitable for laboratory research and not suitable for industrial production, which limits its further development in the field of solar blind detection.

The bandgap width of diamond material is 5.5eV, which has the advantages of high temperature resistance, fast heat conduction, and radiation resistance, but it is difficult to achieve controllable doping, it is difficult to prepare high-quality diamond films, and the actual application cost is high, all of which have become diamond films. application barrier

MgZnO material can adjust the band gap range of 3.3-7.8eV by adjusting the Mg component. It has a large adjustment range and excellent optical properties; MgZnO can only be detected under strong light and low noise background, and the responsivity is not high, so it is difficult to prepare High-performance MgZnO ultraviolet detectors have been produced, which largely limits its development

[0011] Furthermore, for the currently existing graphene / gallium oxide Schottky heterojunction solar-blind ultraviolet detector devices, the graphene constituting the Schottky structure is in direct contact with gallium oxide. Grow or transfer one or more layers of graphene on the surface, and the mobility of graphene can theoretically exceed 200,000 cm at room temperature 2 / Vs, but it is actually affected by the quality of the crystal material in direct contact with graphene, that is, the mobility of graphene will be greatly reduced due to the serious influence of the surface state

At the same time, the surface state is composed of many deep energy levels, which intensifies the recombination of electron-hole photogenerated carrier pairs and reduces the performance of the device. However, it is very difficult to eliminate the surface state, which restricts the development of Schottky structure devices to a certain extent.

Images