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Two-dimensional metal organic framework semiconductor material, preparation method thereof and application thereof

A metal-organic framework and semiconductor technology, applied in the direction of hybrid capacitor electrodes, etc., to achieve high conductivity, highly reversible redox, and simple synthesis steps

Inactive Publication Date: 2019-07-12
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is a new challenge to prepare new two-dimensional conductive MOF electrode materials with high capacitance and both double-layer capacitance and pseudocapacitance mechanisms.

Method used

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  • Two-dimensional metal organic framework semiconductor material, preparation method thereof and application thereof
  • Two-dimensional metal organic framework semiconductor material, preparation method thereof and application thereof
  • Two-dimensional metal organic framework semiconductor material, preparation method thereof and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A method for preparing a two-dimensional metal organic framework semiconductor material, comprising the steps of:

[0030] Under the protection of argon, 8.6 mg of 2,3,6,7,10,11,14,15-octahydroxytetrabenzonaphthalene I and 5.5 mg of copper acetate monohydrate were dissolved in 500 μl of degassed N , N-dimethylformamide and 2 ml of degassed purified water, sonicated for 10 min, reacted at 85°C for 72 h, lowered to room temperature, centrifuged, washed the solid three times with water and three times with acetone. Vacuum drying at room temperature for one day to obtain a black powder, that is, a two-dimensional metal organic framework semiconductor material II-1;

[0031] The reaction formula is as follows:

[0032]

[0033] figure 1 Scanning electron microscope and high-resolution transmission electron microscope photos of the two-dimensional metal organic framework semiconductor material prepared in Example 1. It proves that the two-dimensional metal organic frame...

Embodiment 2

[0039] A method for preparing a self-supporting two-dimensional metal-organic framework semiconductor material film, the steps are as follows:

[0040] Put 10 mg of two-dimensional metal organic framework semiconductor material powder and 2 mg of conductive carbon black prepared in Example 1 into an agate mortar and grind evenly, add 2 mg of 60% polytetrafluoroethylene (adhesive) and 2 drops of Absolute ethanol, keep grinding to make the mixture even, add a small amount of absolute ethanol continuously during the grinding process to prevent the mixture from drying out. When the mixture becomes batter-like, use a small steel spoon to stir continuously until the solvent is completely evaporated and a malleable dough-like mixture is obtained. The sample was repeatedly rolled by a pair of rollers to make a film with a thickness of 40 μm. Vacuum drying at 70°C for 12 hours to obtain a dry self-supporting two-dimensional metal organic framework semiconductor material film. The abo...

Embodiment 3

[0042] The preparation of a symmetrical solid-state supercapacitor battery device and the testing of an electrochemical capacitor include the following steps:

[0043]Two square membranes obtained in Example 2 were used, NKK-MPF30AC-100 was used as a separator in the middle, and 30 microliters of 1M sodium chloride aqueous solution was used as an electrolyte, and they were packaged in a battery. After standing overnight, the cyclic voltammetry curve, constant current charge-discharge curve and cycle stability performance of the device were tested in sequence. First, the working potential window is determined to be 0-1.0V, during which the battery responds purely capacitively. Subsequently, test 5mV s respectively -1 -100mV s -1 Cyclic voltammetry curves at different scan rates (such as Figure 5 shown). The curve presents an approximately rectangular trajectory with two obvious redox peaks, indicating that the capacitance of the two-dimensional MOF semiconductor material i...

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Abstract

The invention discloses a two-dimensional metal organic framework semiconductor material, a preparation method and application thereof. The preparation method comprises the steps of placing 2, 3, 6, 7, 10, 11, 14, 15-octahydroxy tetraphenyl (I) and divalent metal ions into a solvent under the protection of an inert atmosphere, and reacting for 12 to 72 hours under the condition of room temperature-85 DEG C to obtain the two-dimensional metal organic framework semiconductor material, wherein the reaction formula is shown in the description. The two-dimensional metal organic framework semiconductor material of the invention has the advantages of simple synthesis steps and mild conditions. An obtained two-dimensional sheet structure has a diamond-shaped pore and the advantages of high electrical conductivity, high stability and highly reversible redox property. A capacitor device prepared by the two-dimensional metal organic framework semiconductor material obtained by the method of the present invention has the advantages of simple operation, large electric capacity, good stability and excellent cycle performance.

Description

technical field [0001] The invention belongs to the field of metal-organic framework materials and electrochemical energy storage, and in particular relates to a two-dimensional metal-organic framework semiconductor material with diamond-shaped channels, a preparation method and an application thereof. Background technique [0002] Supercapacitors are an important part of high-power electronic devices in hybrid electric vehicles and portable electronic devices. They have the advantages of high energy density, fast charge and discharge capabilities, and good cycle stability. Generally, supercapacitors can be divided into two types, electric double layer capacitors and pseudocapacitors, according to the energy storage mechanism. They require materials with high electrical conductivity, large specific surface area, and highly reversible redox properties, respectively. Porous carbon materials, conducting polymers, and transition metal oxides are three important classes of elect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G11/48H01G11/24C08G83/00
CPCC08G83/008H01G11/24H01G11/48Y02E60/13
Inventor 陈龙刘婧娟李阳
Owner TIANJIN UNIV