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Ultrathin silicon solar cell and preparation method thereof

A crystalline silicon solar cell, ultra-thin technology, applied in the field of solar cells, can solve the problems of narrow process window and poor matching, and achieve the effects of simple cell structure, reduced fragmentation rate, and reduced operation difficulty

Active Publication Date: 2019-11-12
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, passivation contact materials such as silicon oxide and aluminum oxide have poor matching between their own energy bands and silicon wafers. During use, it is necessary to ensure that the thickness of the material is thin enough to achieve the tunneling effect of carriers and realize the effective transport of carriers.
Therefore, for passivation contact materials such as silicon oxide and aluminum oxide, the process window is extremely narrow, which brings great difficulty to the preparation of subsequent cells.

Method used

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  • Ultrathin silicon solar cell and preparation method thereof
  • Ultrathin silicon solar cell and preparation method thereof
  • Ultrathin silicon solar cell and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0034] Ultra-thin crystalline silicon solar cells were constructed by modifying ITO with ultra-thin metallic aluminum with a work function of 4.28eV.

[0035] (1) Etching and thinning traditional hard monocrystalline silicon wafers at 90°C by using a sodium hydroxide solution with a concentration of 50 wt%, and thinning the silicon wafers with a thickness of 180 μm to 45 μm;

[0036] (2) Using deionized water to clean the surface of the silicon wafer;

[0037] (3) MACE heavy silver solution (0.01mM AgNO3 +4M HF) to deposit silver on the surface of ultra-thin single crystal silicon wafers for 10-20s, and then put into the etching solution (7.36M HF+4.58M H 2 o 2 ) for 60s of catalytic corrosion to prepare a nanoporous structure;

[0038] (4) Immerse the prepared black silicon in the solution for etching to prepare an inverted pyramid black silicon structure: using the anisotropic corrosion effect of the nano-reconstruction solution on silicon, NaF:H 2 o 2 :H 2 O=1:2:4, the...

Embodiment 2

[0045] Ultra-thin crystalline silicon solar cells were constructed by modifying ITO with ultra-thin metal magnesium with a work function of 3.66eV.

[0046] (1) Etching and thinning traditional hard monocrystalline silicon wafers at 90°C by using a sodium hydroxide solution with a concentration of 50 wt%, and thinning the silicon wafers with a thickness of 180 μm to 45 μm;

[0047] (2) Using deionized water to clean the surface of the silicon wafer;

[0048] (3) MACE heavy silver solution (0.01mM AgNO 3 +4M HF) to deposit silver on the surface of ultra-thin single crystal silicon wafers for 10-20s, and then put into the etching solution (7.36M HF+4.58M H 2 o 2 ) for 60s of catalytic corrosion to prepare a nanoporous structure;

[0049] (4) Immerse the prepared black silicon in the solution for etching to prepare an inverted pyramid black silicon structure: using the anisotropic corrosion effect of the nano-reconstruction solution on silicon, NaF:H 2 o 2 :H 2 O=1:2:4, the...

Embodiment 3

[0056] Ultra-thin crystalline silicon solar cells were constructed by modifying ITO with ultra-thin metal magnesium with a work function of 3.66eV.

[0057] (1) Etching and thinning traditional hard monocrystalline silicon wafers at 90°C by using a sodium hydroxide solution with a concentration of 50 wt%, and thinning the silicon wafers with a thickness of 180 μm to 80 μm;

[0058] (2) Using deionized water to clean the surface of the silicon wafer;

[0059] (3) MACE heavy silver solution (0.01mM AgNO 3 +4M HF) to deposit silver on the surface of ultra-thin single crystal silicon wafers for 10-20s, and then put into the etching solution (7.36M HF+4.58M H 2 o 2 ) for 60s of catalytic corrosion to prepare a nanoporous structure;

[0060] (4) Immerse the prepared black silicon in the solution for etching to prepare an inverted pyramid black silicon structure: using the anisotropic corrosion effect of the nano-reconstruction solution on silicon, NaF:H 2 o 2 :H 2 O=1:2:4, the...

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Abstract

The invention relates to an ultrathin silicon solar cell and a preparation method thereof. The ultrathin silicon solar cell employs a random nanometer inverted pyramid as a surface anti-reflection structure, a titanium oxide thin film deposited by an atomic layer and a TCO thin film modified by low-work function ultrathin metal are respectively used as an electron transmission layer and an upper electrode, and a back field with small thermal stress and an back electrode is built through depositing a metal aluminum thin film by magnetron sputtering and combining subsequent low-temperature annealing. The ultrathin silicon solar cell has the advantages that the cell structure is simple, and no warping phenomenon is generated; and compared with a traditional high-temperature thermal diffusionprocess, the low-temperature process has the advantages that the operation difficulty of cell preparation can be greatly reduced, the debris rate of the cell is reduced, and the low-temperature process is an ultrathin crystal silicon battery preparation technology having potential application.

Description

technical field [0001] The invention relates to an ultra-thin crystalline silicon solar cell and a preparation method thereof, which belongs to the field of semiconductor devices and also relates to the field of solar cells. Background technique [0002] At present, hard crystalline silicon solar cells with a thickness of 160-200 μm dominate the photovoltaic market due to their advantages of high efficiency and stability, but the price of power generation is more expensive than ordinary power generation, which is still a bottleneck restricting its further market promotion. For hard crystalline silicon solar cells, crystalline silicon material accounts for at least 25% of the cost. Therefore, by reducing the amount of silicon used (the thickness of the silicon wafer is reduced to less than 50 μm), the power generation cost per watt of the crystalline silicon cell module can be greatly reduced, and its market competitiveness can be improved. In addition, ultra-thin crystallin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236H01L31/0224H01L31/074H01L31/18B82Y40/00
CPCH01L31/02363H01L31/074H01L31/02245H01L31/1804B82Y40/00Y02E10/547Y02P70/50
Inventor 沈鸿烈唐群涛
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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