A kind of interface atomic memristor and preparation method thereof

A memristor and interface technology, applied in the field of microelectronics, can solve problems such as poor consistency, high power consumption, and complicated operation, and achieve the effects of reducing defects and vacancies, low power consumption, and improving consistency

Active Publication Date: 2022-06-14
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the defects of the prior art, the purpose of the present invention is to solve the technical problems of high power consumption, complex operation and poor consistency of existing memristor devices

Method used

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  • A kind of interface atomic memristor and preparation method thereof
  • A kind of interface atomic memristor and preparation method thereof
  • A kind of interface atomic memristor and preparation method thereof

Examples

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preparation example Construction

[0063] The method for preparing another interface-type atomic memristor based on two-dimensional atomic crystals includes the following steps:

[0064] 1) Prepare graphene or other semi-metallic two-dimensional atomic crystal materials by mechanical exfoliation method or chemical vapor deposition method;

[0065] 2) using ultraviolet lithography or electron beam lithography to prepare and design the shape of the bottom electrode of graphene or other semi-metallic two-dimensional atomic crystal materials on the substrate;

[0066] 3) Using an etching process, the excess graphene or other semi-metallic two-dimensional atomic crystal materials are etched cleanly;

[0067] 4) Preparation of two-dimensional atomic crystal materials by means of mechanical lift-off, chemical vapor deposition (CVD), chemical vapor transport (CVT), molecular beam epitaxy (MBE) or laser thinning;

[0068] 5) using oxygen ion treatment, natural oxidation, thermal oxidation or ultraviolet ozone treatment...

Embodiment 1

[0088] 1) Preparation of gold bottom electrode: first spin a layer of AZ5214 photoresist on the substrate with a glue spinner at 1500 r / min for 15 seconds and 4000 r / min for 30 s, and expose a strip of AZ5214 photoresist with a photolithography machine. Electrode pattern (line width is about 3μm), the pattern is revealed with developer, then 30nm gold electrode is grown on the substrate by electron beam evaporation, and finally put into acetone, alcohol and deionized water respectively to remove excess photoresist .

[0089] 2) Preparation and transfer of hafnium diselenide dielectric: using mechanical peeling method to peel off the hafnium diselenide thin film to SiO 2 On the surface of the / Si substrate, the thickness of the thin film is about 20 nm, and then the surface treatment of hafnium diselenide is performed by the oxygen ion treatment method, and the thickness of the oxide layer is about 5 nm.

[0090] 3) Transfer the hafnium diselenide thin film on the substrate to...

Embodiment 2

[0099] 1) Preparation of gold bottom electrode: first spin a layer of AZ5214 photoresist on the substrate with a glue spinner at 1500 r / min for 15 seconds and 4000 r / min for 30 s, and expose a strip of AZ5214 photoresist with a photolithography machine. Electrode pattern (line width is about 3μm), the pattern is revealed with developer, and then 30nm gold electrode is grown on the substrate by electron beam evaporation, and finally put into acetone, alcohol and deionized water, respectively, to remove excess photoresist .

[0100] 2) Preparation and transfer of titanium diselenide dielectric: the titanium diselenide film was exfoliated to SiO by mechanical exfoliation 2 On the surface of the / Si substrate, the thickness of the film is about 20 nm, and then the titanium diselenide is surface-treated by a surface oxidation treatment method.

[0101] 3) Transfer the titanium diselenide film on the substrate to the gold bottom electrode prepared in step 1).

[0102]4) Preparatio...

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Abstract

The invention discloses an interface type atomic memristor and a preparation method thereof. The memristor structure is a sandwich structure with a bottom electrode / dielectric layer / top electrode on the substrate and a top protective layer; the bottom electrode is made of an inert metal material such as platinum , gold, palladium, flexible conductive materials such as indium tin oxide, graphene and other semi-metallic two-dimensional atomic crystal materials or semiconductor two-dimensional atomic crystals; the top electrode is an active metal material such as silver, copper, titanium, tungsten, titanium nitride The medium layer is composed of two-dimensional atomic crystal material, wherein the surface of the two-dimensional atomic crystal material is oxidized; the substrate includes silicon oxide, silicon nitride, aluminum oxide, polyimide or polydimethylsiloxane. The memristor provided by the present invention has the characteristics of large switching ratio, low switching voltage, stable resistance state, and excellent cycle durability through the use of the interface between the specific two-dimensional atomic crystal surface oxide layer and the atomic level of the active metal top electrode, and has a wide range of application prospects.

Description

technical field [0001] The invention relates to the technical field of microelectronics, and more particularly, to an interface-type atomic memristor and a preparation method thereof. Background technique [0002] Memristor is a passive circuit element related to magnetic flux and charge, and is considered to be the fourth basic circuit element besides resistance, capacitance and inductance. As early as the 1970s, Professor Cai Shaotang deduced the existence of such components from the point of view of logic and axioms, but it was not until 2008 that this "lost device" was first used by Hewlett-Packard Labs in a single TiO 2 implemented in the device. Memristors have excellent properties such as non-volatility, small size, low power consumption, multi-resistance states, and good CMOS compatibility, making them show great potential in storage and brain-like neural computing. [0003] Discrete memristive devices are generally sandwich structures with top electrodes, bottom e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/881H10N70/011
Inventor 徐明刘龙杨哲缪向水
Owner HUAZHONG UNIV OF SCI & TECH
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