MoON coating and preparation method and application thereof
A coating and pulse magnetic technology, applied in coating, metal material coating process, ion implantation plating, etc., can solve the problem of electrochemical electrode energy storage performance affecting electrodes, difficult flexible electrodes and flexible energy storage devices, Reduce the effective specific surface area of the electrode and other issues to achieve the effect of improving electrical contact, excellent comprehensive electrochemical performance, and good conductivity
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Embodiment 1
[0037] 1. Fix the pretreated P-doped conductive silicon or flexible graphite film substrate on the workpiece turret in the coating chamber, so that the substrate is facing the surface of the molybdenum target, the distance between the target and the base is 26cm, and the rotation speed of the turret is adjusted to 10rpm. The speed is 0rpm, turn on the heater to raise the temperature to 300°C, and pre-pump the background vacuum to 5.0×10 -3 Pa;
[0038] 2. Open the Ar gas flow valve, adjust the air pressure to 0.5Pa, turn on the DC pulse bias power supply, adjust the substrate bias voltage to -600V, duty cycle 30%, frequency 40kHz, open the anode layer ion source and adjust the current 5A to conduct Ion source etching and cleaning for 5 minutes;
[0039] 3. Reduce the substrate bias to -150V, turn on Ar, N 2 Gas flow valve, adjust Ar / N 2 The flow ratio is 1:4, adjust the total air pressure to 0.9Pa, turn on the Cr arc target, adjust the target current to 80A, and deposit for...
Embodiment 2
[0049] 1. Fix the pretreated P-doped conductive silicon or flexible graphite film substrate on the workpiece turret in the coating chamber, so that the substrate is facing the surface of the molybdenum target, the distance between the target and the base is 26cm, and the rotation speed of the turret is adjusted to 10rpm. The speed is 0rpm, turn on the heater to raise the temperature to 300°C, and pre-pump the background vacuum to 5.0×10 -3 Pa;
[0050] 2. Open the Ar gas flow valve, adjust the air pressure to 0.5Pa, turn on the DC pulse bias power supply, adjust the substrate bias voltage to -600V, duty cycle 30%, frequency 40kHz, open the anode layer ion source and adjust the current 5A to conduct Ion source etching and cleaning for 5 minutes;
[0051] 3. Reduce the substrate bias to -150V, turn on Ar, N 2 Gas flow valve, adjust Ar / N 2 The flow ratio is 1:4, adjust the total air pressure to 0.9Pa, turn on the Cr arc target, adjust the target current to 80A, and deposit for...
Embodiment 3
[0055] The MoON coating was prepared by the pulse magnetron sputtering deposition method in Example 1, and the atomic percentage content of each element in the layer was: Mo: 26 at.%, O: 40 at.%, N: 34 at.%.
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