ZnO thin film structure and preparation method thereof

A technology of thin film structure and ordered structure, which is applied in the field of ZnO thin film structure and its preparation, can solve the problems of cost control, distribution uniformity and shape controllability, etc., to increase physical and chemical adsorption and expand the scope of application , performance-enhancing effects
CN111118450AInactive Publication Date: 2020-05-08JIANGSU HINOVAIC TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
JIANGSU HINOVAIC TECH CO LTD
Publication Date
2020-05-08
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a ZnO thin film structure which comprises a substrate, a nano forest arranged on the substrate and a ZnO layer deposited on the nano forest. The invention also discloses a preparation method of the ZnO film. The preparation method comprises the following steps of selecting the substrate; coating the substrate with a polymer layer to form a nano forest structure; and finallydepositing the ZnO layer on the nano forest structure. Compared with a traditional ZnO thin film, the ZnO thin film structure provided by the invention has the advantages that raw materials are reduced, the cost is reduced, and meanwhile, the ZnO thin film structure has the characteristics of high porosity and the large specific surface area of the nano forest. According to the preparation methodof the ZnO thin film structure, a magnetron sputtering method and a nano forest preparation process are combined, the thickness, the morphology, the growth direction and the density of the thin filmin the ZnO thin film structure can be adjusted through parameter control, the process is simple, and operation is convenient.
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Description

technical field

[0001] The invention relates to the field of semiconductor material processing, in particular to a ZnO thin film structure and a preparation method thereof. Background technique

[0002] ZnO thin films are widely used because of their good transparent conductivity, piezoelectricity, photoelectricity, gas sensitivity, and pressure sensitivity, such as surface acoustic wave devices, planar optical waveguides, transparent electrodes, ultraviolet light-emitting devices, gas-sensitive sensors etc.

[0003] In order to better apply ZnO thin films, the key is to prepare high-quality ZnO thin film structures. The preparation methods of ZnO thin film structures with different morphologies are also different. An excellent ZnO thin film preparation method should not only have uniform distribution and controllable morphology, but also need simple process and low cost. At present, the commonly used ZnO thin film preparation methods include vapor deposition, pulsed laser...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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