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ZnO thin film structure and preparation method thereof

A technology of thin film structure and ordered structure, which is applied in the field of ZnO thin film structure and its preparation, can solve the problems of cost control, distribution uniformity and shape controllability, etc., to increase physical and chemical adsorption and expand the scope of application , performance-enhancing effects

Inactive Publication Date: 2020-05-08
JIANGSU HINOVAIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, the technical problem to be solved by the present invention is to overcome the defects of cost control, distribution uniformity and shape controllability in the existing ZnO thin film preparation technology, thereby providing a ZnO thin film structure and its preparation method

Method used

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  • ZnO thin film structure and preparation method thereof
  • ZnO thin film structure and preparation method thereof

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Embodiment 1

[0065] This embodiment provides a method for preparing a ZnO thin film structure, comprising the following steps:

[0066] (1) Spin-coat a 4 μm polyimide layer on a single crystal silicon substrate. During spin-coating, the rotating speed is 2500rpm, and the spin-coating time is 40s. After spin-coating, it is placed on a hot plate for baking. The baking temperature is 120℃, baking time is 10min;

[0067] (2) Utilize plasma cleaning equipment to carry out plasma bombardment process, the plasma used is oxygen plasma and argon plasma, the flow rate of oxygen plasma gas source is 50 sccm, the flow rate of argon plasma gas source is 20 sccm, oxygen chamber The pressure is 5Pa, the argon cavity pressure is 2Pa, the radio frequency power is 350W, the oxygen plasma treatment time is 9min, and the argon plasma treatment time is 25min, and nanofibers are obtained on the substrate, such as figure 1 As shown, the diameter of the nanofiber is 50-100nm, the number of nanofibers per square ...

Embodiment 2

[0070] This embodiment provides a method for preparing a ZnO thin film structure, comprising the following steps:

[0071] (1) Spin-coat a 3 μm polyimide layer on a single crystal silicon substrate. During spin-coating, the rotating speed is 3300rpm, and the spin-coating time is 40s. After spin-coating, place it on a hot plate for baking. The temperature is 120℃, and the baking time is 10min;

[0072] (2) Utilize the plasma cleaning equipment to carry out the plasma bombardment process, the plasma used is oxygen plasma, the flow rate of the oxygen plasma gas source is 50sccm, the cavity pressure is 5Pa, the radio frequency power is 350W, and the oxygen plasma treatment time is 9min , to obtain nanofibrous structures on the substrate, such as figure 1 As shown, the diameter of the nanofiber is 100-150nm, the number of nanofibers per square micrometer is 10-15, and the height of the nanofiber is 0.85 μm;

[0073] (3) Using nanofibers as a mask, reactive ion etching was perform...

Embodiment 3

[0076] The difference between this embodiment and embodiment 2 is that the parameters of each step are different, and a step of wet etching to remove nanofibers is added after step (3), to obtain a nanocone-ZnO film structure.

[0077] (1) Spin-coat a 5 μm polyimide layer on a monocrystalline silicon substrate. During spin-coating, the rotating speed is 2000rpm, and the spin-coating time is 40s. After spin-coating, place it on a hot plate for baking. The temperature is 120℃, and the baking time is 10min;

[0078] (2) Utilize the plasma cleaning equipment to carry out the plasma bombardment process, the plasma used is oxygen plasma, the flow rate of the oxygen plasma gas source is 50sccm, the cavity pressure is 5Pa, the radio frequency power is 350W, and the oxygen plasma treatment time is 9min , to obtain nanofibrous structures on the substrate, such as figure 1 As shown, the diameter of the nanofiber is 100-150nm, and the number of nanofibers in each square micron area is 10...

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Abstract

The invention discloses a ZnO thin film structure which comprises a substrate, a nano forest arranged on the substrate and a ZnO layer deposited on the nano forest. The invention also discloses a preparation method of the ZnO film. The preparation method comprises the following steps of selecting the substrate; coating the substrate with a polymer layer to form a nano forest structure; and finallydepositing the ZnO layer on the nano forest structure. Compared with a traditional ZnO thin film, the ZnO thin film structure provided by the invention has the advantages that raw materials are reduced, the cost is reduced, and meanwhile, the ZnO thin film structure has the characteristics of high porosity and the large specific surface area of the nano forest. According to the preparation methodof the ZnO thin film structure, a magnetron sputtering method and a nano forest preparation process are combined, the thickness, the morphology, the growth direction and the density of the thin filmin the ZnO thin film structure can be adjusted through parameter control, the process is simple, and operation is convenient.

Description

technical field [0001] The invention relates to the field of semiconductor material processing, in particular to a ZnO thin film structure and a preparation method thereof. Background technique [0002] ZnO thin films are widely used because of their good transparent conductivity, piezoelectricity, photoelectricity, gas sensitivity, and pressure sensitivity, such as surface acoustic wave devices, planar optical waveguides, transparent electrodes, ultraviolet light-emitting devices, gas-sensitive sensors etc. [0003] In order to better apply ZnO thin films, the key is to prepare high-quality ZnO thin film structures. The preparation methods of ZnO thin film structures with different morphologies are also different. An excellent ZnO thin film preparation method should not only have uniform distribution and controllable morphology, but also need simple process and low cost. At present, the commonly used ZnO thin film preparation methods include vapor deposition, pulsed laser...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35B05D7/24C09D179/08G01N33/00
CPCB05D7/24C09D179/08C23C14/086C23C14/35G01N33/0036
Inventor 石梦毛海央陈贵东陈大鹏
Owner JIANGSU HINOVAIC TECH CO LTD
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