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Laser stripping material as well as preparation method and application thereof

A technology of laser lift-off and laser irradiation, which is applied in semiconductor/solid-state device manufacturing, adhesive types, polyether adhesives, etc., can solve the problems of unstable dispersion system, poor heat resistance and chemical resistance, and high laser power and other problems, to solve the effects of poor chemical resistance and thermal stability, avoid dispersion instability, and high laser absorption rate

Active Publication Date: 2020-08-14
深圳市化讯半导体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the material mainly has the following problems: 1) The chemical resistance and thermal stability of urethane acrylate oligomers are poor, and they are easily corroded or thermally degraded in some processes, which may cause reliability problems ; 2) The solid content of the material needs to reach 60%-90%. If the content is too low, it will cause insufficient cohesive force and layering in the process, and the liquid medicine will penetrate. The viscosity rises, and there is a problem that it is difficult to apply uniformly, and it is still difficult to separate after laser irradiation; 3) The laser energy density used in the photodecomposition layer is relatively high, such as the laser energy density in the ultraviolet band must be greater than 1000mj / cm 2 , it is easy to cause the device layer to be damaged by the laser
This patented technology also has the following problems: 1) The material also uses polymers such as polyurethane, polyester, polyorthoester, polyvinylpyrrolidone, silicone resin, and block copolymers containing polyurethane units, and also has heat resistance. and poor chemical resistance; 2) Due to the thermal decomposition of the resin, a large laser power is required and a large amount of heat is generated, which may cause damage to the device; 3) The photothermal replacement layer passes through Filling carbon black and other light-absorbing agents to absorb laser light, the filling amount is relatively large, generally 20%-60%, a large amount of carbon black filling will affect the UV curing effect of the light-thermal replacement layer, and at the same time, it is easy to cause the dispersion system. Stable, 4) In this patent, a colorless transparent agent needs to be added to prevent laser debonding and then bonding

Method used

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  • Laser stripping material as well as preparation method and application thereof
  • Laser stripping material as well as preparation method and application thereof
  • Laser stripping material as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] This embodiment provides a laser lift-off material and a preparation method thereof.

[0051] The laser peeling material includes 20% of polyamic acid, 5% of nano-carbon black light absorbing agent and 75% of N'N-dimethylformamide based on the total mass of 100%.

[0052] Preparation:

[0053] The polyamic acid, nano-carbon black light absorbing agent and N'N-dimethylformamide were mixed at 23° C. for 2 hours at a stirring speed of 200 rpm to obtain the laser lift-off material.

Embodiment 2

[0055] This embodiment provides a laser lift-off material and a preparation method thereof.

[0056] The laser peeling material includes 15% of polyamide, 8% of carbon nanotube light absorbing agent and 77% of N'N-dimethylacetamide based on the total mass of 100%.

[0057] Preparation:

[0058] The polyamide, the carbon nanotube light absorbing agent and N'N-dimethylacetamide were mixed at 25° C. for 2.5 hours at a stirring speed of 300 rpm to obtain the laser lift-off material.

Embodiment 3

[0060] This embodiment provides a laser lift-off material and a preparation method thereof.

[0061] The laser lift-off material includes 10% of polyphenylene sulfide, 4% of graphite powder (light absorbing agent) and 86% of dimethyl sulfoxide, based on the total mass of 100%.

[0062] Preparation:

[0063] The poly(phenylene ether sulfone), graphite powder light absorbing agent and dimethyl sulfoxide were mixed at 30° C. for 3 hours at a stirring speed of 100 rpm to obtain the laser lift-off material.

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Abstract

The invention provides a laser stripping material as well as a preparation method and application thereof. The total mass of the laser stripping material is 100%. The laser stripping material comprises 1-40% of matrix resin, 0.1-10% of a light absorbing agent and 55-98% of a solvent, wherein the matrix resin comprises any one or a combination of at least two of polysulfone, polyamide, polyamide acid, polyimide, maleimide, polyetherimide, polybenzimidazole, polyacrylonitrile, polyetheretherketone, polyphenyl ether sulfone, polybenzoxazole, polyphenylene sulfide or polyetheretherketone. The laser stripping material is good in chemical resistance, excellent in heat resistance and high in laser absorptivity, the technical effect of low-energy laser debonding can be achieved, and damage of laser to a device layer is effectively avoided. Besides, when the laser stripping material is applied to preparation of a multi-layer ultrathin flexible device, the thickness of a stripping layer is small, cleaning is easy after laser scanning, and no material is left.

Description

technical field [0001] The invention relates to the technical field of laser peeling materials, in particular to a laser peeling material and its preparation method and application. Background technique [0002] With the development of thinner and lighter semiconductor devices, the processing technology of ultra-thin devices is also facing huge challenges. For example, when a thin wafer is thinned to a certain thickness, it may curl or even crack due to its own tension. This shape change It may also cause alignment accuracy problems in subsequent processing, as well as sheet holding problems during the entire process. [0003] CN103715126A discloses a bonding and peeling treatment method for wafer laminates, device wafers, and carrier wafers. The method mainly utilizes urethane acrylate oligomers with photopolymerizable double bonds in the molecule, and polymerizes them by light irradiation. And curing to achieve the purpose of laser response. However, the material mainly ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09J179/08C09J177/00C09J181/02C09J181/06C09J171/10C09J11/04H01L21/683
CPCC09J179/08C09J177/00C09J181/02C09J181/06C09J171/00C09J11/04H01L21/6835H01L2221/68386C08K2201/011C08K2003/2275C08K3/04C08K3/041C08K3/22C08K3/08Y02E10/549
Inventor 夏建文黄明起刘彬灿
Owner 深圳市化讯半导体材料有限公司
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