Cold isostatic pressing forming preparation method of tungsten oxide-based ceramic target material

A technology of cold isostatic pressing and ceramic target material, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of not being able to prepare tungsten oxide-based ceramic target material

Inactive Publication Date: 2021-03-12
北京航大微纳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing technology cannot prepare this kind of tungsten oxide-based ceramic target material.

Method used

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  • Cold isostatic pressing forming preparation method of tungsten oxide-based ceramic target material
  • Cold isostatic pressing forming preparation method of tungsten oxide-based ceramic target material
  • Cold isostatic pressing forming preparation method of tungsten oxide-based ceramic target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0094] 1. Preparation of doped submicron tungsten oxide-based powder:

[0095] 1) Prepare raw materials: prepare ammonium metatungstate with a purity ≥ 99.99%, and the doping source element components in this embodiment are calculated as Mo:Li:Zr=5:10:1 according to the molar ratio; prepare MoO with the corresponding element ratio 2 , Li 2 O, ZrO 2 Doping source powder, purity ≥ 99.99%; the mass ratio of ammonium metatungstate added to doping source powder is 87:13.

[0096] It is also feasible to purchase other elemental metals, alloy inorganic salts, and organic salts of corresponding elements for the doping source powder, and the effect is similar.

[0097] 2) preparing a premix solution, fully dissolving pure water, organic monomer acrylamide, and crosslinking agent N'N'-methylenebisacrylamide in a weight ratio of 100:10:1 to form a premix solution;

[0098] 3) Preparation of slurry: Add the pure ammonium metatungstate and doping source powder prepared in step 1) to the...

Embodiment 2

[0120] The difference between this example and Example 1 is that the mass fraction of tungsten in the powder is 85% based on tungsten oxide, and the mass fraction of the doping source is 15%. : Zr=10:5:1;

[0121] The remaining steps are the same as in Example 1. The relative density of the obtained tungsten oxide-based ceramics measured by the drainage method is 98.5%, the average grain size is 4.5 μm, the doping elements enter the ceramic lattice, and there is no obvious second phase. The electrical conductivity of the ceramic body is 15S / cm.

[0122] The electron micrographs of the ceramics prepared in this embodiment are as follows: Figure 5 shown.

Embodiment 3

[0124] 1. Preparation of doped submicron tungsten oxide-based powder:

[0125] 1) Prepare raw materials: prepare ammonium metatungstate with a purity ≥99.99%, and the doping source element components of this embodiment are calculated as Ti:Mo:Zr=10:1:1 according to the molar ratio; prepare the oxidation of the corresponding element ratio Titanium, molybdenum oxide, zirconia doping source powder, purity ≥ 99.999%; the mass ratio of added ammonium metatungstate to doping source powder is 92.2:7.8.

[0126] It is also feasible to purchase other elemental metals, alloy inorganic salts, and organic salts of corresponding elements for the doping source powder, and the effect is similar.

[0127] 2) To prepare a premix solution, the pure water and the organic monomer are a combination of polyvinyl alcohol and polyacrylic acid, wherein the ratio of polyvinyl alcohol to polyacrylic acid is 1:1, and the crosslinking agent is polyethylene glycol, polyethylene glycol A combination of alc...

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Abstract

The invention relates to a cold isostatic pressing forming preparation method of a tungsten oxide-based ceramic target material, which comprises the following steps of raw material preparation: takingprimary mixed powder containing high-purity tungsten oxide and doping source powder, enabling the doping source to be selected from at least three of Ti, Mo, V, Al, Li and Zr, enabling the purity ofthe mixed powder to be greater than 99.95%, enabling the average particle size to be 500nm to 1800nm, and enabling the D50 particle size to be 200-750nm, wherein the quantitative relation of M1, M2, M3, M4 and M5 conforms to the formula as described in the specification, conducting spray drying, powder filling and compaction, pressing, biscuit degumming and sintering, taking out the sintered blankafter heat preservation, and conducting or not conducting machining according to needs. The cold isostatic pressing forming preparation method can be used for preparing the tungsten oxide-based ceramic target material with good conductivity, higher purity, fine grain size and high density.

Description

technical field [0001] The invention relates to a method for preparing a ceramic target material, in particular to a method for preparing an n-type tungsten oxide-based ceramic target material by cold isostatic pressing. Background technique [0002] Tungsten trioxide is an important n-type tungsten oxide semiconductor, which has important applications in the fields of gas-sensing materials, photocatalysis, and new energy. Tungsten trioxide is an anode electrochromic material with excellent performance. The tungsten trioxide ceramic target is prepared into micron and submicron photoelectric thin films by magnetron sputtering, and compounded into thin film photoelectric devices, which can be displayed on large screens and high density. It has broad application prospects in information storage and other fields. Compared with organic photochromic films, WO 3 The film has good stability and low cost. Doping certain elements into WO 3 The density of lattice defects can be eff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495C23C14/35C23C14/08C04B35/64C04B35/622
CPCC04B35/495C23C14/3414C23C14/35C23C14/083C04B35/64C04B35/622C04B2235/6562C04B2235/6567C04B2235/96C04B2235/786C04B2235/77C04B2235/3256C04B2235/3203C04B2235/3244C04B2235/3232
Inventor 高明张虎张花蕊杨本润
Owner 北京航大微纳科技有限公司
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