Preparation method of miniature supercapacitor capable of being used for kHZ alternating current linear filtering

A supercapacitor and linear filtering technology, applied in the manufacture of hybrid/electric double layer capacitors, hybrid capacitor electrodes, etc., can solve the problems of low energy devices that can only be used for energy storage, to enhance adhesion and reduce charge Transmission impedance, the effect of increasing the characteristic frequency

Inactive Publication Date: 2021-06-11
XIDIAN UNIV
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the existing methods for preparing micro-supercapacitors such as screen printing, inkjet printing or laser etching, micro-supercapacitors have the advantages of high material loading and high capacitance, but their disadvantages are that the characteristic frequency is relatively low. Low, it can only be used as an energy device for energy storage, and cannot be used as a filter capacitor to complete the function of an electronic device for AC linear filtering

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of miniature supercapacitor capable of being used for kHZ alternating current linear filtering
  • Preparation method of miniature supercapacitor capable of being used for kHZ alternating current linear filtering
  • Preparation method of miniature supercapacitor capable of being used for kHZ alternating current linear filtering

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Example 1: Making SiO-based 2 Substrated PEDOT / PSS-based kHz planar micro-supercapacitors.

[0028] Step 1, for SiO 2 Substrate pretreatment.

[0029] Select SiO 2 The substrate, as the base of the whole device, was cleaned with deionized water, analytically pure acetone, and analytically pure ethanol in sequence, and then dried with nitrogen gas for later use.

[0030] Step 2, preparing a patterned substrate by photolithography.

[0031] 2a) The pretreated SiO 2 Put the sample on the glue-spinning machine, drip the positive glue AZ4620, rotate it at a speed of 4000r / s for 40s, then put it on the heating plate and dry it at 100°C for 120s to obtain a layer of AZ4620 photoresist with a thickness of 1.5μm , and then use the photolithography machine to make the structure photoresist-SiO 2 The sample was exposed for 4s to obtain a pattern with a microelectrode line width of 2 μm and a distance between electrodes of 5 μm;

[0032] 2b) The exposed photoresist SiO 2 Pu...

Embodiment 2

[0045] Embodiment 2: making a graphene-based kHz planar micro-supercapacitor based on a glass substrate.

[0046] Step 1, pretreating the glass substrate.

[0047] Select the glass substrate as the base of the overall device, and then use deionized water, analytically pure acetone, and analytically pure ethanol to ultrasonically clean several times, and then blow dry with nitrogen for later use;

[0048] Step 2, preparing a patterned substrate by photolithography.

[0049] 2.1) Put the pretreated glass sample on the glue machine, drip it with positive glue AZ6112, rotate it at a speed of 2000r / s for 40s, then put it on a heating plate and dry it at 100°C for 60s to obtain a glass with a thickness of 1.2μm. A layer of AZ6112 photoresist, and then use a photolithography machine to expose the sample with a photoresist-glass structure for 3s, and obtain a pattern with a microelectrode line width of 10 μm and a distance between electrodes of 20 μm.

[0050] 2.2) Put the exposed p...

Embodiment 3

[0063] Embodiment 3: Making a carbon nanotube CNT-based kHz planar micro-supercapacitor based on a PET substrate.

[0064] Step A, pretreating the PET substrate.

[0065] Select the PET substrate as the base of the overall device, and then use deionized water, analytically pure acetone, and analytically pure ethanol to ultrasonically clean each several times, then blow dry with nitrogen for later use;

[0066] In step B, a patterned substrate is prepared by photolithography.

[0067] In the first step, put the PET sample on the glue-spinning machine, drip it with negative glue AZ5214, rotate it at a speed of 4000r / s for 40s, then place it on a heating plate and dry it at 100°C for 120s to obtain a film with a thickness of 1.8μm. A layer of AZ5214 photoresist, and then use a photolithography machine to expose the structure of photoresist-PET for 5s, and obtain a pattern with a microelectrode line width of 50 μm and a distance between electrodes of 50 μm;

[0068] In the secon...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
thicknessaaaaaaaaaa
electrical conductivityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of a miniature supercapacitor capable of being used for kHZ alternating current linear filtering. By the method, the problems that a traditional aluminum electrolytic capacitor is large in size and small in characteristic frequency are mainly solved. According to the implementation scheme, the method comprises the following steps of 1) making a patterned photoresist-target substrate on a target substrate through photoetching; 2) depositing a metal current collector on the patterned substrate by using an electron beam evaporation device to form a metal current collector / photoresist-target substrate structure, and cleaning the metal current collector / photoresist-target substrate structure by using a plasma oxygen device; 3) manufacturing an electrode material coating on the surface of the cleaned metal current collector and removing the photoresist to form an electrode material-metal current collector-target substrate structure; and 4) dispensing an electrolyte on the surface of an electrode material, leading out positive and negative electrode leads, and packaging with PDMS to complete the manufacturing of the miniature supercapacitor device. The manufactured device is small in size and electrode size, the characteristic frequency can reach kHz or above, and the preparation method can be used for manufacturing a miniature rectifying circuit.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a preparation method of a miniature supercapacitor, which can be used for kHz AC linear filtering. Background technique [0002] Obtaining energy from the external environment, such as converting thermal energy and mechanical energy in the external environment into electrical energy, has become the main way to solve the problem of future energy scarcity. As a flexible wearable electronic device, the nano triboelectric generator is an output device that converts mechanical energy into AC pulses. It requires a rectifier circuit at the back end to achieve DC output from AC signals to daily power usage. The commonly used frequency range of this pulsed AC signal is several to several kilohertz, so the rectification circuit for back-end matching needs to work normally within this frequency range. In order to meet the needs of the integration of flexible power...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01G11/84H01G11/86H01G11/28
CPCH01G11/84H01G11/86H01G11/28Y02E60/13
Inventor 宁静冯欣王东张进成马佩军郝跃
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap