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Crystal diamond nitrogen-doped semiconductor composite material and preparation method thereof

A composite material and diamond technology, which is applied in the field of crystalline diamond nitrogen-doped semiconductor composite material and its preparation, can solve the problems of affecting electrical conductivity and cannot be used as a performance semiconductor material, etc., and achieves good crystal quality, low cost, and wide operating pressure range. Effect

Active Publication Date: 2021-08-20
杭州超然金刚石有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, N-type diamond is generally prepared by doping group V elements (N, P) and group VI elements (O, S) as electron donors, trying to obtain semiconductor materials with good performance; wherein nitrogen is used as a natural and The most abundant impurity in synthetic diamond has been widely concerned by scientists; however, due to the strong electronegativity of nitrogen atoms, when nitrogen is replaced and doped into diamond to form a 4C-N configuration with the surrounding four carbon atoms, Unpaired electrons are bound near the nitrogen atom, thus causing N-type diamond to have a deep defect level at 1.7eV (EC-1.7eV) below the conduction band when nitrogen is used as the donor element; this severely affects the conductivity at room temperature , resulting in its inability to be used as a semiconductor material with good performance

Method used

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  • Crystal diamond nitrogen-doped semiconductor composite material and preparation method thereof
  • Crystal diamond nitrogen-doped semiconductor composite material and preparation method thereof
  • Crystal diamond nitrogen-doped semiconductor composite material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1II

[0040] The preparation of embodiment 1IIa type diamond single crystal

[0041] In this embodiment, a type IIa diamond single crystal is prepared by using the temperature gradient method of the high temperature and high pressure method.

[0042] The high-temperature and high-pressure equipment adopts SDP6×1200 six-sided top press, and the carbon source is artificial high-purity graphite (purity 99.9%), which is placed at the high-temperature end of the cavity; the size of the seed crystal is 0.5×0.5mm 2 , the {100} or {111} plane of the seed crystal is used for crystal growth, and FeNi (64:36wt%) is placed between the carbon source and the seed crystal as a catalyst. During the synthesis, the set pressure is 5.6GPa, the temperature is 1436K, the synthesis speed is 1.0mg / h, Ti / Cu (1:0.063) is used as a nitrogen removal agent to remove nitrogen, and a high-quality type IIa diamond single crystal is prepared.

[0043] The result is as figure 1 As shown, the {100} plane of the di...

Embodiment 2

[0044] Embodiment 2 The preparation of crystalline diamond nitrogen-doped semiconductor composite material

[0045] The invention adopts microwave plasma chemical vapor deposition (Microwave plasma chemical vapor deposition, MPCVD) to prepare crystalline diamond nitrogen-doped semiconductor composite material.

[0046] Using the diamond single crystal prepared in Example 1 as the substrate material, at first pretreatment, the substrate material is pretreated to make the surface of the substrate material produce defects that are convenient for diamond growth. These defects have high potential energy and can promote diamond formation. Nucleation increases the nucleation density, and the diamond particles remaining on the surface can also become seeds to promote nucleation.

[0047] The specific operation of the pretreatment of the substrate material is: the diamond single crystal prepared in Example 1 is ground on 1.5 μm diamond powder, so that fine and uniform scratches are pro...

Embodiment 3

[0066] Embodiment 3 The preparation of crystalline diamond nitrogen-doped semiconductor composite material

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Abstract

The invention discloses a nitrogen-doped crystal diamond semiconductor material, and belongs to the field of diamond semiconductors. The nitrogen-doped crystal diamond semiconductor composite material comprises nitrogen-doped crystal diamond grown on a substrate material by taking IIa type diamond crystal prepared by a high-temperature and high-pressure method as the substrate material and taking CH4, Ar and NH3 as gas sources. The invention further discloses a method for preparing the nitrogen-doped crystal diamond semiconductor material. The nitrogen-doped crystal diamond semiconductor material prepared by the method has good electrical properties and semiconductor properties, can promote the development of diamond semiconductor devices, and is also conducive to the industrial development of diamond-based semiconductor devices.

Description

technical field [0001] The invention belongs to the field of diamond semiconductors, and in particular relates to a crystalline diamond nitrogen-doped semiconductor composite material and a preparation method thereof. Background technique [0002] As the material with the highest natural hardness, diamond has many excellent properties such as large band gap (5.5eV), high thermal conductivity, corrosion resistance, good light transmission, high longitudinal wave sound velocity, and dielectric breakdown field strength. Currently the most promising semiconductor material. At present, P-type semiconductors have been obtained by doping boron elements in diamonds, and the technology development is relatively mature. However, there are still major challenges in obtaining high-performance N-type semiconductor diamond. At present, the impurities doped in the N-type diamond film have a deep energy level, resulting in low carrier concentration, small Hall mobility, and high resistivi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/511C30B29/04B01J3/06
CPCC23C16/278C23C16/274C23C16/511C30B29/04B01J3/06B01J2203/061
Inventor 余斌余海粟朱轶方陆骁莹
Owner 杭州超然金刚石有限公司