Wafer plasma cutting protection liquid, preparation method and application thereof

A technology of plasma and protective liquid, which is applied in semiconductor/solid-state device manufacturing, coating, electrical components, etc., can solve the problems of not being able to apply plasma cutting environment, etc., and achieve the goal of increasing glass transition temperature, low thermal weight loss, and improving adhesion Effect

Active Publication Date: 2021-11-16
ZHEJIANG AUFIRST MATERIAL TECH CO LTD
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The current plasma cutting protective fluid for wafers can improve the cutting efficiency and stability of wafers to a certain extent, avoid chips or cracks, and thermal stress problems, but there is a problem that it cannot be applied to the plasma cutting environment under high working temperature conditions.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer plasma cutting protection liquid, preparation method and application thereof
  • Wafer plasma cutting protection liquid, preparation method and application thereof
  • Wafer plasma cutting protection liquid, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035]With the total mass percentage being 100%wt, the following components were weighed in mass percentage: 1%wt polyethylene oxide with a molecular weight of 100,000 and 4%wt polyacrylic acid with a molecular weight of 5 million, 0.1%wt polyacrylic acid Oxyethylene alkylphenol ether, 0.1%wt polydimethylsiloxane, 0.1%wt2,2,6,6-tetramethylpiperidine, 10%wt absolute ethanol, 84.7%wt water. The material was put into a mixer, and stirred at a speed of 500 rpm at room temperature for 1 hour until uniform and transparent, and a wafer plasma cutting protection solution was prepared, which was named S1, and the above naming rules were used in subsequent examples.

Embodiment 2

[0037] With the total mass percentage being 100%wt, the following components were weighed in mass percentage: 10%wt polyethylene oxide with a molecular weight of 100,000 and 25%wt polyacrylic acid with a molecular weight of 5 million, 1%wt polyacrylic acid Oxyethylene alkylphenol ether, 0.1%wt GPES type defoamer, 1%wt2,2,6,6-tetramethylpiperidine, 10%wt isopropanol, 52.9%wt water. The material was put into a mixer, and stirred at a speed of 500 rpm for 1 hour at room temperature until uniform and transparent, and a wafer plasma cutting protection solution was prepared, which was named S2.

Embodiment 3

[0039] Taking the total mass percentage as 100%wt, weigh the following components in mass percentage respectively: 2%wt polyethylene oxide with a molecular weight of 100,000 and 8%wt polyethylene oxide with a molecular weight of 5 million, 0.5%wt Polyoxyethylene alkylphenol ether, 1.0%wt fatty acid ester, 0.5%wt2,2,6,6-tetramethylpiperidine, 10%wt ethylene glycol butyl ether, 78%wt water. The material was put into a mixer, and stirred at a speed of 500 rpm for 1 hour at room temperature until uniform and transparent, and a wafer plasma cutting protection solution was prepared, which was named S3.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
transition temperatureaaaaaaaaaa
Login to view more

Abstract

The invention provides a wafer plasma cutting protection liquid, a preparation method and application thereof. The wafer plasma cutting protection liquid comprises the following components in parts by weight: 5-40 parts of a water-soluble resin, 0.1-2 parts of a wetting agent, 0.1-2 parts of a defoaming agent, 0.1-2 parts of a free radical capturing agent, 5-20 parts of an organic solvent, and 34-89.7 parts of water. The wafer plasma cutting protection liquid can quickly form a film on the surface of a wafer, and has good heat resistance and removability. During wafer processing, by using the protection liquid, condensed silicon steam or other chippings generated in the processing process can be effectively prevented from being deposited on the surface of a chip. According to the invention, the wafer plasma cutting protection liquid has high thermal stability, the situation that the surface of a wafer is directly exposed to the external environment due to the fact that a protection film is decomposed when plasma cutting is carried out under the thermal effect of laser cutting or the high working temperature can be avoided, and the reliability and the yield of products are effectively improved.

Description

technical field [0001] The invention relates to chip manufacturing technology, in particular to a wafer plasma cutting protection liquid and its preparation method and application. Background technique [0002] Wafer refers to the silicon wafer used in the production of silicon semiconductor integrated circuits. Wafer cutting is the key process of integrated circuit packaging. If the reliability of the wafer surface cannot be improved during the dicing process, it will have a great impact on the subsequent process, thereby reducing the yield rate of chip production. [0003] Although the current wafer cutting has evolved from simple blade cutting to laser cutting and plasma cutting, when the laser irradiates and cuts along the cutting road of the wafer, the heat energy generated is easily absorbed by the wafer. It is easy to cause silicon to melt or thermally decompose, generate silicon vapor to condense and deposit on the wafer, and cause chips to be generated around the e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09D133/00C09D171/02C09D7/65C09D7/20H01L21/683H01L21/78
CPCC09D133/00C09D171/02C09D7/65C09D7/20H01L21/6836H01L21/78H01L2221/68336H01L2221/6834C08L2201/08C08L2205/025C08L2205/035C08L71/02
Inventor 侯军贺剑锋
Owner ZHEJIANG AUFIRST MATERIAL TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap