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High-stability perovskite solar cell based on oxalic acid passivation and preparation method thereof

A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as dislocation defects, perovskite decomposition and phase transition, impurity defects, etc., to reduce non-radiative recombination, photoelectric Improvement of chemical performance and improvement of humidity stability

Pending Publication Date: 2021-12-17
SUN YAT SEN UNIV
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  • Abstract
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  • Claims
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Problems solved by technology

Example: unstable dangling bonds on the perovskite surface (e.g. uncoordinated Pb 2+ ) is a defect that easily causes perovskite decomposition and phase transition. This defect will act as a recombination center to limit the transport of carriers, resulting in surface recombination and photovoltaic loss; impurity defects and dislocations are easy to form at the perovskite grain boundaries. vacancies
In order to solve such problems, the existing solutions generally passivate the surface of perovskite through chemical methods such as organic molecules and polymers, but these passivation effects are usually through Lewis acid or Lewis base and ammonium ion group pairs. The cations of the perovskite are passivated, and the secondary bonds (such as: hydrogen bonds, weak covalent bonds, and intermolecular forces) between the passivating molecules and the perovskite surface are usually weak and not sufficient for long-term protection of perovskite. Decomposition of mineral materials due to oxygen and water attack defects

Method used

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  • High-stability perovskite solar cell based on oxalic acid passivation and preparation method thereof
  • High-stability perovskite solar cell based on oxalic acid passivation and preparation method thereof
  • High-stability perovskite solar cell based on oxalic acid passivation and preparation method thereof

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Embodiment 1

[0040] Embodiment 1 A kind based on H 2 C 2 o 4 Processed perovskite solar cells

[0041] The battery is composed of ITO conductive base layer, SnO 2 Electron transport layer, FA system perovskite light absorption layer, Spiro-OMeTAD hole transport layer and Au electrode, the FA system perovskite light absorption layer is formed by H 2 C 2 o 4 Treated perovskite light absorbing layer. Its preparation method is as follows:

[0042] (1) Select the ITO (180nm) conductive glass with a square resistance of 20Ω, a transmittance of 85%, and a size of 1.5cm×1.5cm as the substrate. The ITO conductive substrate is ultrasonically passed through deionized water, acetone, and absolute ethanol in sequence. After processing for 15 minutes, dry it with nitrogen gas for later use;

[0043] (2) Preparation of the electron transport layer: SnO with a mass percent concentration of 15% 2 Colloid aqueous solution diluted to 3.75% SnO 2 Precursor solution, then use a pipette gun to pipette...

Embodiment 2

[0047] Embodiment 2 A kind of based on H 2 C 2 o 4 Processed perovskite solar cells

[0048] Except step (3), the preparation method of all the other steps is the same as embodiment 1.

[0049] The step (3) of the present embodiment is specifically: the 0.1mg H 2 C 2 o 4 Dissolve the powder in 1mL of anhydrous ether as an anti-solvent; mix 1.4mmol of FAI and 1.4mmol of PbI 2 , 0.28 mmol of FACl was dissolved in 1 mL of a mixed solvent of DMF and DMSO with a volume ratio of 8:1 to prepare a perovskite precursor solution, and stirred and dissolved at room temperature until clear. Then pipette the SnO 2 Add 40 μL of perovskite precursor solution dropwise on the dense layer, spin coating speed is 5000rmp, time is 30s, drop 0.1mg / mL dissolved H 2 C 2 o 4 1mL of diethyl ether anti-solvent, after the spin coating, the film was annealed on a hot stage at 150°C for 10min to obtain a perovskite film, the surface morphology of which was as follows figure 2 As shown in g-i, it...

Embodiment 3

[0050] Embodiment 3 A kind of based on H 2 C 2 o 4 Processed perovskite solar cells

[0051] Except step (3), the preparation method of all the other steps is the same as embodiment 1.

[0052] The step (3) of the present embodiment is specifically: the FAI of 1.4mmol, the PbI of 1.4mmol 2, 0.28 mmol of FACl was dissolved in 1 mL of a mixed solvent of DMF and DMSO with a volume ratio of 8:1 to prepare a perovskite precursor solution, and stirred and dissolved at room temperature until clear. Then pipette the SnO 2 Add 40 μL of perovskite precursor solution dropwise on the dense layer, spin-coat at a speed of 5000 rpm for 30 s, and then place the spin-coated perovskite film in a place where 20 mgH 2 C 2 o 4 on a solid heating platform, and cover the two with a transparent glass cover, then preliminarily anneal at 100°C for 10 minutes, and then anneal on a heating platform at 150°C for 10 minutes to obtain H 2 C 2 o 4 Treated perovskite light absorbing layer.

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Abstract

The invention belongs to the technical field of perovskite solar cells, and particularly relates to a high-stability perovskite solar cell based on oxalic acid passivation and a preparation method thereof. The perovskite solar cell comprises an ITO conductive substrate layer, an electron transport layer, a perovskite light absorption layer, a hole transport layer and a metal electrode from bottom to top. The perovskite light absorption layer is a perovskite light absorption layer which is subjected to H2C2O4 passivation treatment. When the perovskite light absorption layer is passivated, C2O4<2-> is introduced in the film forming process of the perovskite, so that the C2O4< 2-> and Pb suspended in the perovskite form a PbC2O4 compact layer with higher moisture resistance, the humidity stability of the perovskite light absorption layer is greatly improved, and the crystalline phase of the prepared perovskite cell is more stable; and moreover, defects on the surface of the perovskite are passivated, and meanwhile, the photoelectric property of the perovskite cell is also improved.

Description

technical field [0001] The invention belongs to the technical field of perovskite solar cells, in particular to a highly stable perovskite solar cell based on oxalic acid passivation and a preparation method thereof. Background technique [0002] Perovskite (PVSK) materials have become the research focus of next-generation solar cells due to their high light absorption coefficient, long carrier lifetime, adjustable band gap, easy processing, and low cost. Compared with the most mature, widely used, and highly stable silicon-based batteries, perovskite batteries are prone to serious decomposition in complex environments such as high temperature and high humidity. Therefore, stability issues are limiting the commercialization of perovskite batteries. biggest factor. [0003] In organic-inorganic hybrid lead-based perovskites, the formamidinyl group (CH(NH 2 ) 2+ ,FA + ) perovskites have attracted extensive attention due to their near-ideal bandgap (1.45–1.51eV) and excelle...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42H01L51/46
CPCH10K71/311H10K85/30H10K30/00Y02E10/549
Inventor 高平奇陈甜谢江生
Owner SUN YAT SEN UNIV
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