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Determination method and determination kit for ultra-trace metal impurities in high-silicon matrix solvent

A metal impurity, ultra-trace technology

Pending Publication Date: 2022-04-12
NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, hydrofluoric acid is added to this method. On the one hand, hydrofluoric acid reacts violently with the sample, is easy to splash, and is extremely dangerous. It has high requirements for operators and protective equipment, and it is easy to cause sample splash loss and test results. Inaccurate; on the other hand, hydrofluoric acid is highly corrosive, and a special corrosion-resistant system is required. In addition, the purity of hydrofluoric acid itself is high (such as ultra-clean and high-purity reagents), thus increasing the detection cost
In addition, the sample processing process of this method is complicated, there are many operation steps, and the risk of introducing contamination is high

Method used

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  • Determination method and determination kit for ultra-trace metal impurities in high-silicon matrix solvent
  • Determination method and determination kit for ultra-trace metal impurities in high-silicon matrix solvent
  • Determination method and determination kit for ultra-trace metal impurities in high-silicon matrix solvent

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Determination method of metal impurities in hexafluorodisilane, metal impurities to be tested are Ag (silver), As (arsenic), Au (gold), Ba (barium), Be (beryllium), Bi (bismuth), Cd (cadmium) , Fe (iron), Ge (germanium), In (indium), K (potassium), Li (lithium), Mo (molybdenum), Na (sodium), Ni (nickel), Pb (lead), Pt (platinum) , Sb (antimony), Sn (tin), Sr (strontium), Ta (tantalum), Ti (titanium), Tl (thallium), W (tungsten), Zn (zinc), Zr (pick), the impurity limit is 100ppt.

[0033] 1. Solution preparation

[0034] ①Sample solution Weigh 50g of hexachlorodisilane sample into a clean PFA bottle in an ultra-clean bench, and accurately weigh to 0.0001g. Place the PFA bottle on a heating plate and heat at 180°C until the solution in the PFA bottle is completely evaporated to dryness. After cooling to room temperature, 10 mL of diluent (2% aqueous nitric acid) was added for dissolution. Prepare 3 copies in parallel.

[0035] ②The blank solution is the same as ① ex...

Embodiment 2

[0057] In order to further compare the hydrofluoric acid desiliconization method of the prior art with the evaporation desiliconization method of the present invention, the contriver gets the organic solvent containing silane, measures the silicon content and several susceptible environments and artificially with these two kinds of methods respectively Factors Contamination of metal impurities (K, Na, Zn).

[0058] Take the silane-containing organic solvent and record it as it is. Take the original samples and prepare 3 parts of sample solutions (same as Example 1), which are recorded as 1# sample evaporated to dryness, 2# sample evaporated to dryness, and 3# sample evaporated to dryness. In order to prevent ICP-MS from being polluted by excessive silicon content, ICP-OES (inductively coupled plasma optical emission spectrometer) was used to detect Si (silicon). At the same time, the inventor removed silicon by adding hydrofluoric acid digestion method, took the original samp...

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Abstract

The invention is applicable to the technical field of semiconductors, and provides a method for determining ultra-trace metal impurities in a high-silicon matrix solvent, which is characterized in that the high-silicon matrix solvent is heated, so that the high-silicon matrix solvent is completely evaporated, and the heating temperature is lower than the boiling point of the metal impurities and is the same as or higher than the boiling point of the high-silicon matrix solvent. According to the method, the metal impurities in the high-silicon matrix solvent can be accurately determined, hydrofluoric acid is not used, the operation is simple and convenient, the safety problem caused by hydrofluoric acid is avoided, and the detection cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for measuring ultra-trace metal impurities in a high-silicon matrix solvent and a test kit for the detection. Background technique [0002] The integrated circuit industry is the basic industry of advanced manufacturing, and its downstream applications cover major industries such as automobiles, communications, electrical appliances, computers, aerospace, military and photovoltaics. Semiconductor raw materials are the cornerstone of the integrated circuit industry. Semiconductor raw materials are used in all links of integrated circuit production. For example, masks, photoresists and various wet chemicals for cleaning are required in photolithography. to silicon wafers, electron gases, etc. With the continuous advancement of integrated circuit technology nodes, the requirements for the purity, size and a series of physical and chemical properties of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/31G01N27/626G01N1/44
Inventor 陈伟琴应长春顾大公陈情丽陈玲李珊珊许从应毛智彪
Owner NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
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