Preparation method of nanoscale silicon carbide single crystal
A silicon carbide single and nano-scale technology, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, can solve the problems of industrial production gap, impurities in products, complex process, etc., and achieve good crystallinity and dispersibility. Good, simple craftsmanship
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[0040] A method for preparing a nanoscale silicon carbide single crystal provided in an embodiment of the present application includes the following steps:
[0041] The plasma equipment is used as the reactor, the tungsten rod is selected as the cathode, and the silicon carbide rod is used as the anode;
[0042]The reactor is evacuated, and a reaction atmosphere is introduced into the reactor;
[0043] Cooling reduces the temperature of the reactor wall and adjusts the reactor voltage and current;
[0044] Turn on the power of the reactor, move the anode, draw the arc from the cathode, keep the arc stable, and keep the set distance between the cathode and the anode;
[0045] After reacting for a certain period of time, turn off the reactor power supply and continue to cool the reactor wall so that the product condenses on the inner wall of the reactor;
[0046] The product on the inner wall of the reactor is nano-scale silicon carbide single crystal.
[0047] In this applic...
Embodiment 1
[0060] Close the ventilation holes of the hydrogen arc plasma equipment, and vacuumize for 30 minutes, to 10 -3 Pa; pass argon and hydrogen into the reactor, and control the ratio of the two gases to 5:2; pass cooling water and adjust the voltage and current to 45V and 20A; when the outside of the reactor wall is fully cooled, turn on the power switch and move The anode makes it draw the arc from the cathode; keep the arc stable, and keep the distance between the cathode and the anode at 2 mm; turn off the power after 3 minutes of reaction, and continue to pass cooling water until the outer wall of the reactor is fully cooled; collect the products on the inner wall of the reaction chamber to obtain nano Grade silicon carbide single crystal powder.
Embodiment 2
[0062] Close the ventilation holes of the hydrogen arc plasma equipment, and vacuumize for 30 minutes, to 10 -3 Pa; pass argon and hydrogen into the reactor, and control the ratio of the two gases to 5:1; pass cooling water and adjust the voltage and current to 45V and 20A; when the outside of the reactor wall is fully cooled, turn on the power switch and move The anode makes it draw the arc from the cathode; keep the arc stable, and keep the distance between the cathode and the anode at 2 mm; turn off the power after 3 minutes of reaction, and continue to pass cooling water until the outer wall of the reactor is fully cooled; collect the products on the inner wall of the reaction chamber to obtain nano Grade silicon carbide single crystal powder.
[0063] Such as figure 2 Shown is the X-ray diffraction pattern of the nanoscale silicon carbide single crystal prepared in Example 1 of the present application, figure 2 The middle diffraction peak is clear and sharp, and the 2...
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