Ternary Zn-Ni-Mn phosphorizing solution

A phosphating solution, zinc-nickel-manganese technology, applied in the coating process of metal materials, etc., can solve the problems of unsuitable cathodic electrophoretic coating automation operation, working temperature not satisfying low-temperature phosphating, and unsuitable coating automatic assembly line, etc., to achieve The effects of enhancing market competitiveness, optimizing matching, and simplifying formula composition

Inactive Publication Date: 2006-10-18
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The main problems of zinc-nickel-manganese ternary phosphating solution currently used in cathodic electrophoretic coating are: high working temperature, many phosphating residues; complex composition ratio, narrow range of process parameters, and difficult to control; nickel, High manganese content, high cost, poor market competitiveness, and nickel and manganese are toxic heavy metals, which is not conducive to environmental protection; slow phosphating speed, not suitable for automatic painting assembly line operations
Chinese patent CN1221043A "Zinc-nickel-manganese ternary system medium-temperature phosphating solution" has simple composition, good film formation, and low requirements for accelerators, but the concentration of phosphating solution is high, th

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Take 0.65 g of zinc oxide (0.05% of zinc ions), adjust it into a paste with 3-10 mL of water, and stir evenly. Get 12.5 grams of industrial phosphoric acid (phosphate root 1.0%) and 1.1 grams of 68% concentrated nitric acid, add drop by drop in the zinc oxide that has been transferred into paste, stir while adding, until dissolving. Add 0.5 gram nickel nitrate hexahydrate (nickel ion 0.01%) successively again, 0.65 gram content is the manganese nitrate solution (manganese ion 0.01%) of 50%, 0.64 gram sodium chlorate (chlorate radical 0.05%), 1.74 gram sodium nitrate ( Total nitrate ion 0.2%), 0.165 g sodium fluorosilicate (fluoride ion 0.001%), 0.5 g sodium nitrite (0.05%), 0.5 g tartaric acid (0.05%), 0.5 g sodium gluconate (0.05%), add water Dilute to 1000 grams.

[0031] Adjust the free acidity of the phosphating solution to 0.5, the total acidity to 16, and the temperature to 35°C according to the process conditions; the workpiece can be phosphated after degreasing...

Embodiment 2

[0033]Take 1.5 grams of zinc oxide (0.12% of zinc ions), adjust it into a paste with 3-10 mL of water, and stir evenly. Get 16 grams of industrial phosphoric acid (phosphate root 1.3%) and 2.15 grams of 68% concentrated nitric acid, add dropwise in the zinc oxide that has been transferred into a paste, stir while adding, until dissolving. Add 1.5 gram of nickel nitrate hexahydrate (nickel ion 0.03%) successively again, 1.95 gram content is the manganese nitrate solution (manganese ion 0.03%) of 50%, 1 gram of sodium chlorate (chlorate radical 0.08%), 11.7 gram of sodium nitrate ( Total nitrate ion 1%), 1.1 grams of sodium fluoride (fluoride ion 0.05%), 2 grams of hydroxylamine sulfate (0.2%), 0.3 grams of sodium citrate (0.3%), 0.01 grams of OP emulsifier (0.001%), 0.2 g mannitol (0.02%), diluted with water to 1000 grams. According to the process conditions, adjust the free acidity of the phosphating solution to 0.8, the total acidity to 18, and the temperature to 40°C, and t...

Embodiment 3

[0035] Take 1.5 grams of zinc oxide and 1.5 grams of zinc nitrate (zinc ion 0.17%), mix them into a paste with 3-10 mL of water, and stir evenly. Get 20 grams of industrial phosphoric acid (phosphate root 1.65%) and 3.2 grams of 68% concentrated nitric acid, add drop by drop in the zinc oxide that has been transferred into paste, stir while adding, until dissolving. Add 4.0 gram nickel nitrate hexahydrate (nickel ion 0.08%) successively again, 3.9 gram content is the manganese nitrate solution (manganese ion 0.06%) of 50%, 1.53 gram sodium chlorate (chlorate radical 0.12%), 17.6 gram sodium nitrate ( Total nitrate ion 1.5%), 1.58 grams of hydrofluoric acid (fluoride ion 0.15%), 1 gram of sodium nitrite (0.1%), 2 grams of sodium polyphosphate (0.2%), 0.5 grams of phytic acid (0.5%), Add water to dilute to 1000 grams, adjust the free acidity of the phosphating solution to 1.0, the total acidity to 20, and the temperature to 42°C before use.

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Abstract

The present invention discloses one kind of ternary Zn-Ni-Mn phosphorizing solution and its preparation process. The ternary Zn-Ni-Mn phosphorizing solution consists of zinc ion, phosphate radical ion, nickel ion, manganese ion, chlorate radical ion, nitrate radical ion, fluorine ion, promoter A, additive B and complexing agent C in certain proportion. The present invention can form compact and homogeneous phosphide film with high base resistance and high corrosion resistance, and is suitable for the phosphorizing treatment of cathode before electrophoresis coating.

Description

technical field [0001] The invention belongs to the metal surface chemical conversion coating treatment technology, and more specifically relates to a zinc-nickel-manganese ternary phosphating solution, which is suitable for the pre-coating of automobiles, electrical appliances, precision instruments, instruments and other products that require high coating protection. Phosphating, especially suitable for phosphating before cathodic electrophoretic coating. Background technique [0002] As one of the core technologies of pre-painting treatment, phosphating has been widely used in the world for nearly a hundred years. At present, the most used phosphating technology is zinc-based phosphating technology, and the main component of the phosphating film formed is zinc phosphate, namely Zn 3 (PO 4 ) 2 4H 2 O, referred to as [H] film. However, as domestic large-scale coating production lines generally adopt the cathodic electrophoretic coating process, ...

Claims

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Application Information

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IPC IPC(8): C23C22/07C23C22/36
Inventor 李保松林安甘复兴
Owner WUHAN UNIV
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