Production method for forming semiconductor device
A semiconductor and device technology, applied in the field of semiconductor device manufacturing, can solve problems such as damage to the substrate and impact on yield
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no. 1 example
[0029] The first embodiment of the present invention consists of forming a silicon oxide film by depositing a product obtained by the decomposition of organosilane, which deposition can be achieved by any CVD method, such as thermal CVD, plasma CVD, photo CVD and photo-plasma CVD; then irradiate the deposited film with a pulsed laser beam to improve its characteristics. In particular, the properties are improved by removing carbon atoms and hydrocarbon groups in the film so that the film loses trapping centers. In this way, a silicon oxide film suitable for use as a gate insulating film of a TFT can be obtained. The lasers used in the present invention are pulsed lasers, and preferably ultraviolet emitting lasers, such as excimer lasers, eg KrF, ArF, XeCl and XeF lasers.
[0030] The bright light is preferably ultraviolet or infrared light. As will be described later, ultraviolet light is effective for removing carbon atoms and hydrocarbon groups in the film. The infrared l...
example 1
[0055] Referring to FIG. 1, a method of manufacturing a TFT (a semiconductor device) according to the present invention will be described as follows. First, a silicon oxide film 102 with a thickness of 100 to 300 nm is deposited on a Corning 7059 substrate 101 (300mm×300mm in size, or 100mm×100mm in size) as an underlying oxide film. The oxide film may be deposited by sputtering in an oxygen atmosphere or by plasma CVD, which involves decomposing TEOS and depositing the resultant, followed by annealing the film at a temperature in the range of 450 to 650°C.
[0056] Thereafter, an amorphous silicon film 103 is deposited by plasma CVD method or LPCVD method, and the thickness of this film is 30 to 150 nm, preferably 50 to 100 nm. Next, the thin film was irradiated with a KrF excimer laser operating at a wavelength of 248 nm and a pulse width of 20 ns, as shown in FIG. 1(A), to improve the crystallinity of the silicon thin film 103. The laser irradiation apparatus used here is ...
example 2
[0069] Referring to FIG. 2, the process of preparing a TFT on a soda-lime glass substrate to form an AMLCD element according to the present invention will be described below. First, a silicon nitride film 202 was deposited as a barrier layer on the entire surface of a substrate 201 made of a soda lime glass plate having a thickness of 1.1 mm and a size of 300 mm x 400 mm. Since soda-lime glass is rich in sodium, a silicon nitride film as a barrier layer is deposited by plasma CVD with a film thickness of 5 to 50 nm, preferably 5 to 20 nm, to prevent sodium diffusion in the TFT. This technique of forming a barrier layer by coating a substrate with a thin film of silicon nitride or aluminum oxide is disclosed in Japanese Patent Application Nos. Hei-3-238710 and Hei-3-238714 filed by the present applicant.
[0070] After the oxide (silicon oxide) underlayer 203 is formed, a silicon film 204 is deposited with a thickness of 30 to 150 nm, preferably 30 to 50 nm, by LPCVD or plasma ...
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Abstract
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