Novel SINP silicone blue-violet battery and preparation method thereof

Abstract

The invention relates to a novel semiconductor / insulator / np (SINP) silicone blue-violet battery and a preparation method thereof. The invention uses shallow junctions formed from thermally diffused phosphorus, an ultra-thin SiO2 layer grown by a low temperature thermal oxidation and an ITO dereflection / collection electrode film formed by RF magnetron sputtering to prepares a novel ITO / SiO2 / np blue-violet reinforced SINP silicone photo-battery. A preparation method of the invention is to take a silicon single crystal flake which is P type, and has crystallographic orientation of 100, an electric resistivity of 2 omega.cm and a thickness of 220mu m, as a substrate. The substrate is cleaned and is etched by routine chemistry, and then is thermally diffused by POCl3 liquid source to form n regions (the invention prepares two pieces of novel SINP photo-batteries by different thermal diffusion processes, one being a routine SINP photo-battery having emitting region square resistance of 10 Omega / square and junction depth (deep junction) of 1 mu m, and the other one being an SINP silicone blue-violet battery having emitting region square resistance of 37 Omega / square and junction depth (shallow junction) of 0.4 mu m). A phosphorosilicate glass (HF:H2O=1:10) at front face is removed; Al at back of the silicon chip is steamed; the silicon chip is thermally oxidized at 400 to 500 DEG C and under a condition of V2:O2=4:1 for 15 to 30min to generate a layer of 15 to 20 ultra-thin SiO2 layer, and at the same time the Al at the back is alloyed. Then the ITO dereflection / collection electrode film with transmittance and high conductivity is formed by the RF magnetron sputtering (an ITO film is also deposited on the glass to study electrooptical characteristic thereof), and a Cu gate electrode is formed by magnetron sputtering by metal mask direct-current. Finally, the outer edge part of the battery is cut by a diamond excircle downward cutting / a dicing saw so as to prevent short circuit of the edge of the photo-battery.

Description

technical field [0001] The invention relates to a method for preparing a silicon photovoltaic cell with a SINP structure, and belongs to the technical field of methods for preparing a silicon solar cell. Background technique [0002] In today's society where energy is gradually scarce, people urgently need to find a renewable energy to replace non-renewable energy. As we all know, the sun gives the earth endless heat, so people point their targets at the sun. [0003] Blue-violet light-enhanced silicon photovoltaic devices have important applications in solar cells, photometry, chromaticity, and optical precision measurement. In recent years, from the perspective of preventing the global warming effect, protecting the environment and replacing petroleum energy, the use of solar power has received great attention. At present, the output of monocrystalline silicon solar cells ranks first among all kinds of photovoltaic cells, but because the spectral response of conventional...

AI Technical Summary

Problems solved by technology

However, in the n+p junction silicon photocell made by the traditional diffusion method, there is a "dead layer" with high phosphorus concentration near the surface of the emission region; the lattice distortion in this region is large, and the dislocation density is high, which seriously affects the short-wavelength photogenerated carriers. collection efficiency, resulting in a rapid decline in the blue-violet light response of conventional crystalline silicon photocells

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