Method for preparing magnetic germanium quantum dots
A quantum dot and magnetic technology, which is applied in the field of preparing magnetic germanium quantum dots, can solve the problems of expensive equipment and complicated technology, and achieve the effect of strong magnetic characteristics and uniform surface
Inactive Publication Date: 2012-09-19
SUZHOU UNIV OF SCI & TECH
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Problems solved by technology
Foreign countries also mainly use molecular beam epitaxy to prepare germanium quantum dots. This kind of equipment is expensive and the technology is complicated.
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[0024] A method for preparing magnetic germanium quantum dots of the present invention, the specific preparation method is as follows:
[0025] The experimental device for preparing manganese (Mn) doped germanium quantum dots is as follows: figure 1 , the growth system used is a reactive magnetron sputtering system, which consists of six parts: deposition chamber, pumping system, heating system, gas flow control system, plasma radio frequency system and magnetron sputtering system.
[0026] Select an n-type silicon wafer (100 crystal planes) as the substrate, ultrasonically clean it with acetone, ethanol, and deionized water in sequence, then dry it with nitrogen, and put it into the center of the cathode of the plasma in the deposition chamber. High-purity germane GeH4 (purity 99.9999%) is used as the reaction gas, and argon (Ar) is used as the dilution and sputtering gas. High-purity manganese targets (purity 99.9999%) are used as doping targets.
[0027] The experiment of...
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Abstract
The invention discloses a method for preparing magnetic germanium quantum dots; according to the method, germanium quantum dots are deposited on a silicon chip by the chemical vapor deposition method firstly, and then the germanium quantum dots are subjected to in-situ doping by the magnetron sputtering method. The magnetron sputtering system is free in the grow process of the germanium quantum dots, and Mn ions are doped in situ by the magnetron sputtering technology after the germanium quantum dots are formed. The Ge : Mn magnetic germanium quantum dots generated by the chemical vapor deposition and sputtering method are uniformly dispersed on the silicon chip in an attractive and highly symmetrical spherical shape and have very high saturation magnetization strength and coercivity so as to present very strong ferromagnetism characteristic. The Ge:Mn magnetic germanium quantum dots are suitable for the preparation of each electromagnetic diode, electromagnetic triode, field effect transistor and the like.
Description
technical field [0001] The invention relates to the field of semiconductors, in particular to a method for preparing magnetic germanium quantum dots. Background technique [0002] In recent years, magnetic particles have been doped into semiconductors, so that electrons in semiconductors not only have the charge characteristics of electrons, but also have spin characteristics. This kind of semiconductor is called dilute magnetic semiconductor. Due to the high Curie temperature of semiconductor germanium, its dilute magnetic properties have attracted people's research interest. A higher Curie temperature is very important for the preparation of germanium-based electromagnetic devices. Due to the high compatibility of semiconductor germanium and Si integrated circuit manufacturing technology, it is easy for people to use Si technology to manufacture various advanced electronic and magnetic storage devices. [0003] At present, the structure and electromagnetic properties o...
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IPC IPC(8): H01L21/02B82Y25/00
Inventor 马锡英
Owner SUZHOU UNIV OF SCI & TECH