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Grinding composition used for gallium nitride material, and its preparation method

A composition, gallium nitride technology, applied in chemical instruments and methods, other chemical processes, etc., can solve problems such as new products, provide technical support, etc., achieve high-efficiency grinding effect, excellent surface smoothness, and good industrial application prospects and market value effects

Active Publication Date: 2014-05-28
WUXI YANAO ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Although there are various lapping liquids or lapping compositions for gallium nitride wafer processing in the prior art, the speed and surface roughness of these lapping liquids or lapping compositions for processing wafers still need further improvement or perfection, so that they can meet The requirements of the era of rapid technological development do not provide technical support for new products

Method used

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  • Grinding composition used for gallium nitride material, and its preparation method
  • Grinding composition used for gallium nitride material, and its preparation method
  • Grinding composition used for gallium nitride material, and its preparation method

Examples

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Embodiment 1

[0039] According to the weight ratio, 120g of zirconia abrasive grains (with a particle size of 0.3 μm), 100g of [N-(4-perfluoro-(1,3-dimethyl-2-isopropyl)-1-butenyloxy ) benzenesulfonylamino]ethyldiethylmethylammonium iodide, 40g 1-butyl-1-methylpyrrolidine tetrafluoroborate, 20g polyvinyl alcohol, 10g N-methyldiisopropanolamine, 15g Tetrabutylphosphine bromide, 25g of dibenzo-14-crown-4, 5g of 2-nitroethanol, 8g of carboxymethyl cellulose, and 5g of rhamnolipid were added to the mixing kettle and heated to 40°C, stirred for 15min; Cool to room temperature, add 20 g of glycine, 15 g of pentaerythritol triacrylate and 100 g of deionized water to the above mixed solution according to the weight ratio in turn and continue to stir for 10 min to uniformly disperse to obtain the grinding composition YM-1 of the present invention. .

Embodiment 2

[0041] According to the weight ratio, 150g of zirconia abrasive grains (particle size is 0.5μm), 120g of 2-[N-methyl-[perfluoro-2-[2-(propoxy)-propoxy]propionylamino]- Sodium ethyl sulfate, 80g 1-butyl-1-methylpyrrolidine bromide, 10g polyvinyl alcohol, 30g N-ethyldiisopropanolamine, 20g tetrabutylphosphine chloride, 10g dibenzo-14 - Crown-4, 10g 2-nitroethanol, 5g carboxymethyl cellulose, 10g rhamnolipid were added in the mixing kettle and heated to 35°C, stirred for 20min; then naturally cooled to room temperature, 30g alanine, 18g ethylenedi The alcohol diacrylate and 120 g of deionized water were sequentially added to the above mixed solution according to the weight ratio and continued to stir for 5 min, and then dispersed evenly to obtain the grinding composition YM-2 of the present invention.

Embodiment 3

[0043] According to the weight ratio, 180g of zirconia abrasive grains (particle size is 0.4μm), 80g of [N-[4-[perfluoro-(1,3-dimethyl-2-isopropyl)-1-butene] Oxybenzenesulfonamido] ethyldiethylmethylammonium iodide, 60g 1-butyl-1-methylpyrrolidine nitrate, 15g polyvinyl alcohol, 20g N-propyl diisopropanolamine, 30g tetramine Butyl phosphine acetate, 15g dibenzo-14-crown-4, 20g 2-nitroethanol, 10g carboxymethyl cellulose, 8g rhamnolipid were added to the mixing kettle and heated to 45°C, stirred for 18min; then cooled naturally to At room temperature, 40g of tryptophan, 20g of pentaerythritol triacrylate and 150g of deionized water were sequentially added to the above mixed solution according to the weight ratio and continued to stir for 8min, and uniformly dispersed to obtain the grinding composition YM-3 of the present invention. . Comparative Examples 1-3

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Abstract

The invention relates to a grinding composition used for a gallium nitride material, and its preparation method. The grinding composition comprises abrasive particles, a surfactant, a pyrrolidine ionic liquid, polyvinyl alcohol, N-alkyl-dialkylhydramine, quaternary phosphonium salt, crown ether, 2-nitroethanol, carboxymethyl cellulose, rhamnolipid, a grinding accelerant, an assistant and deionized water according to a certain mass ratio. The novel grinding composition is obtained through appropriate choosing of the types of components and compounding according to a proper ratio, can realize the rapid grinding and high surface precision in gallium nitride wafer processing, can satisfy the practical demands of the semiconductor industry, and has a wide application prospect and a market value in the industrial production.

Description

technical field [0001] The invention relates to an abrasive composition and a preparation method thereof, more specifically to an abrasive composition for gallium nitride materials and a preparation method thereof, and belongs to the field of high-performance wafer processing. Background technique [0002] Gallium nitride is a semiconductor with a large band gap. It is an excellent material for microwave power transistors and a semiconductor with important application value in blue light-emitting devices. The third-generation semiconductor materials represented by gallium nitride have a unique band gap range, excellent optical and electrical properties, and excellent material mechanical properties, making them suitable for light-emitting devices, electronic devices, and semiconductor devices that work under special conditions. It has wide application value. [0003] Gallium nitride-based devices are not only widely used in civilian applications, but also have significant ap...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14
Inventor 唐余武
Owner WUXI YANAO ELECTRONICS TECH
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