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CIGS (Copper Indium Gallium Selenide) film and preparation method thereof

A technology of copper indium gallium selenide and thin film, which is applied in the field of copper indium gallium selenide thin film and its preparation, can solve the problems of restricting large-scale application and production, and achieve the effect of easy to achieve large-area deposition, low cost, and good film morphology

Active Publication Date: 2015-04-22
SHENZHEN DANBANG INVESTMENT GROUP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, new technical contradictions have arisen: KCN, as a highly toxic chemical substance, greatly limits the large-scale application and production of copper indium gallium selenide prepared by electrochemical deposition.

Method used

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  • CIGS (Copper Indium Gallium Selenide) film and preparation method thereof
  • CIGS (Copper Indium Gallium Selenide) film and preparation method thereof
  • CIGS (Copper Indium Gallium Selenide) film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The Mo (molybdenum) glass substrate is plated with Cu (copper) with a thickness of 50 nm by a sputtering process. The solute composition is 0.15mol / L Cu(NO 3 ) 2 , 0.30mol / L InCl 3 , 0.5mol / L GaCl 3 , 0.30mol / L H 2 SeO 3 , 1mol / L potassium chloride, 500ml aqueous solution of 1mol / L trisodium citrate, adjust its pH to 0.3 with dilute hydrochloric acid to form the electrolyte system required for step S2; take Cu-plated Mo glass as the working electrode, The large-area Pt mesh is the counter electrode, and the saturated calomel electrode (SCE) is the reference electrode; the working electrode potential is set to 0.5V (between SCE), the temperature of the electrolyte system is 80 °C, and the working electrode is the copper-plated molybdenum substrate. Electrochemical deposition (deposition time 10 minutes) of copper-poor copper, indium, gallium, and selenium was carried out on the surface, and then the deposited molybdenum substrate was placed in an argon gas containin...

Embodiment 2

[0039] In this embodiment, a Cu layer with a thickness of 105 nm is plated on a Mo glass substrate by an electrochemical deposition process. The solute composition is 0.02mol / L CuSO 4 , 0.04mol / L In 2 (SO 4 ) 3 , 0.1mol / L Ga 2 (SO 4 ) 3 , 0.04mol / L SeO 2 , in a mixed system of 500ml dimethyl sulfoxide (DMSO) of 1mol / L sodium sulfate and water, adjust its pH to 13 with sodium hydroxide to form the electrolyte system required for step S2; take the Mo glass plated with Cu as The working electrode, a large-area Pt mesh was used as the counter electrode, and the saturated calomel electrode (SCE) connected by a double salt bridge system was used as the reference electrode. Adjust the potential of the working electrode to -2.5V (with SCE), the temperature of the electrolyte system is 80°C, and electrochemically deposit copper, indium, gallium, and selenium with poor copper on the working electrode substrate (deposition time 90 minutes), and then deposit treatment. The treated...

Embodiment 3

[0041] Substitute dimethylformamide (DMF) for dimethyl sulfoxide (DMSO) and water in Example 2, and other process parameters are the same as in Example 2, and finally a copper-poor copper indium gallium selenide semiconductor thin film material can be prepared. Through SEM (scanning electron microscope) to observe the film morphology, it is found that the CIGS film crystalline particles prepared in this example are such as figure 1 The crystalline grains of the films shown are large.

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Abstract

The invention discloses a CIGS (Copper Indium Gallium Selenide) film and a preparation method thereof. The preparation method comprises the following steps: S1) plating one layer of copper with the thickness of 10-1000nm on a molybdenum substrate; and S2) in an electrolyte system, adopting an electrochemical deposition method to carry out deposition on the molybdenum substrate subjected to copper plating processing in the step S1) to a form poor-copper CIGS film. When the method is adopted to prepare a light absorption layer material CIGS film used for a solar battery, the shortages of complex technology and equipment, high cost, difficulty in large-scale production since a PVD (Physical Vapor Deposition) method or a CVD (Chemical Vapor Deposition) method is adopted can be avoided, a problem that a traditional electrochemical deposition method must use virulent etching agent can be effectively overcome, the large-area continuous deposition etching-free preparation of the CIGS film is realized, the CIGS film can be favorably subjected to large-scale industrial popularization and application, and an etching-free poor-copper CIGS film which has equivalent quality with a traditional electrochemical deposition KCN (Potassium Cyanide) etching copper-rich film is obtained.

Description

technical field [0001] The invention relates to a light absorption layer of a solar cell, in particular to a copper indium gallium selenide film used as a light absorption layer of a solar cell and a preparation method thereof. Background technique [0002] Currently CuInSe 2 (CIS) thin film solar cells have become one of the most important and promising solar cells, CuInSe 2 The film is a direct energy gap semiconductor material with an energy gap of 1.05eV, and can be formed by doping Ga to form copper indium gallium selenide Cu(In,Ga)Se 2 (CIGS) enables continuous adjustment of the energy gap width within 1.05 ~ 1.67eV, which is suitable for the photoelectric conversion requirements of sunlight; copper indium gallium selenide Cu(In,Ga)Se 2 The film has a high light absorption coefficient (up to 10 5 cm -1 ), with stable performance and no light decay effect, so it has been widely concerned by the photovoltaic industry. [0003] At present, there are vacuum and non-va...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/0322Y02E10/541Y02P70/50
Inventor 刘萍
Owner SHENZHEN DANBANG INVESTMENT GROUP