Organic electroluminescent device and preparation method thereof
An electroluminescent device and electroluminescent technology, which are applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the damage of organic functional layers, poor film formation of lithium fluoride, and reduce the probability of electron and hole recombination And other issues
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[0036] The preparation method of the organic electroluminescence device 100 of an embodiment, it comprises the following steps:
[0037] Step S110 , sequentially forming a hole injection layer 20 , a hole transport layer 30 , a light emitting layer 40 , an electron transport layer 50 and an electron injection layer 60 on the surface of the anode 10 .
[0038] The anode 10 is indium tin oxide glass (ITO), fluorine-doped tin oxide glass (FTO), aluminum-doped zinc oxide glass (AZO) or indium-doped zinc oxide glass (IZO), preferably ITO, with a thickness of 100 nm.
[0039] In this embodiment, before the hole injection layer 20 is formed on the surface of the anode 10, the anode 10 is pretreated. The pretreatment includes: performing photolithography on the anode 10, cutting it into the required size, using detergent, deionized Water, acetone, ethanol, and isopropanone were each ultrasonically cleaned for 15 minutes to remove organic pollutants on the surface of the anode 10 .
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Embodiment 1
[0054] The structure prepared in this example is ITO / MoO 3 / NPB / Alq 3 / Bphen / FeCl 3 / MoO 3 :BCzVBi:Zn / FeBr 3 / Ag organic electroluminescent devices.
[0055] First, carry out photolithography treatment on ITO, cut it into the required size, and then use detergent, deionized water, acetone, ethanol, and isopropanol to sonicate for 15 minutes each to remove organic pollutants on the glass surface; clean the conductive substrate Appropriate treatment: oxygen plasma treatment, the treatment time is 5min, the power is 30W; the hole injection layer is evaporated, and the material is MoO 3 , with a thickness of 60nm; evaporated hole transport layer, made of NPB, with a thickness of 50nm; evaporated luminescent layer, made of BCzVBi, with a thickness of 30nm; evaporated electron transport layer, made of Bphen, with a thickness of 160nm; evaporated electron The injection layer, the electron injection layer is composed of the first iron salt layer, the ternary doped layer and the s...
Embodiment 2
[0061] The structure prepared in this example is IZO / V 2 o 5 / TCTA / DCJTB / TPBi / FeBr 3 / WO 3 :DCJTB:Zn / Fe 2 S 3 / Al organic electroluminescent devices.
[0062] First, use detergent, deionized water, and ultrasound on the IZO glass substrate for 15 minutes to remove organic pollutants on the glass surface; evaporate the hole injection layer: the material is V 2 o 5 , with a thickness of 40nm; evaporated hole transport layer: the material is TCTA, with a thickness of 45nm; evaporated luminescent layer: the selected material is DCJTB, with a thickness of 8nm; evaporated electron transport layer, the material is TPBi, with a thickness of 65nm; evaporated The electron injection layer is plated. The electron injection layer is composed of the first iron salt layer, the ternary doped layer and the second iron salt layer. The first iron salt layer is prepared on the surface of the electron transport layer by thermal resistance evaporation, and the material is FeBr 3 , with a thi...
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