Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method and product of flexible transparent conductive film with high thermal stability

A technology of transparent conductive film and high thermal stability, which is applied in the direction of conductive layer on insulating carrier, cable/conductor manufacturing, circuit, etc., and can solve the problems of decreased thermal stability, poor thermal stability, and low conductivity of conductive polymers, etc. Achieve the effects of increased fracture failure temperature, good ultra-high flexibility, and improved thermal stability

Active Publication Date: 2017-01-25
HUAZHONG UNIV OF SCI & TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, a variety of materials have been proposed as potential alternatives that have been extensively developed, such as indium-doped tin oxide (ITO) and aluminum-doped tin oxide (ITO) sputtered on flexible substrates using conductive oxides. AZO), etc., but there are large defects in the mechanical stability of the film; and in terms of flexibility, more conductive polymers, carbon nanotubes and one-dimensional metal nanomaterials can be used as candidate materials.
However, through comparison, it can be found that: conductive polymers have low conductivity and poor thermal stability; carbon-based materials such as carbon nanotubes have high barriers to electron transmission at intersections due to their surface inertness, resulting in large contact resistance; In contrast, the transparent film based on the one-dimensional metal nanomaterial network structure has a simple preparation process, high conductivity and good flexibility, so it has broad development prospects.
[0004] However, further studies have shown that the above-mentioned existing solutions still have the following defects or deficiencies: First, due to the Rayleigh instability effect in the preparation process of one-dimensional metal nanomaterials, it is often easy to cause its thermal stability to be lower than that of bulk materials. Second, when the commonly used transparent flexible polymer is used as the substrate, such as polyethylene terephthalate (PET), etc., its thermal stability is generally poor, and it is generally unable to withstand many optoelectronic device manufacturing processes. Higher temperature, such as evaporation, annealing heat treatment steps, etc.; finally, even if some materials that can withstand higher temperatures are used as flexible substrates, such as polyimide film (Kapton), etc., but tests show that its visible light transmittance The pass rate is often not high, so it cannot meet the substrate production requirements of transparent conductive films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and product of flexible transparent conductive film with high thermal stability
  • Preparation method and product of flexible transparent conductive film with high thermal stability
  • Preparation method and product of flexible transparent conductive film with high thermal stability

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Use an ethanol solution of silver nanowires with an average aspect ratio of about 1000 to evenly coat the silver nanowires on the silicon wafer with a squeegee tool. The square resistance is set to 70Ω / sq, for example; the coating method can be specifically selected as suction filtration , drop coating, spin coating, scraping film method, spraying method, nanomaterial self-assembly method and so on.

[0040] Next, dissolve the fluorine-containing polyimide powder in N,N-dimethylacetamide to prepare a 5% fluorine-containing polyimide precursor solution by mass ratio; then the fluorine-containing polyimide precursor The liquid is covered on the silicon wafer by the casting and scraping method, and the thickness of the precursor solution is controlled to be about 300 microns; the scraping in this step can also be, for example, adopt the spin coating method in addition to the casting and scraping film forming method;

[0041] Then, for example, the whole is placed in a blas...

Embodiment 2

[0044] Use an ethanol solution of copper nanowires with an average aspect ratio of about 300 to uniformly coat the silver nanowires on the silicon wafer with a squeegee tool, and the square resistance is set to 30Ω / sq, for example;

[0045] Next, dissolve the fluorine-containing polyimide powder in N,N-dimethylacetamide to prepare a fluorine-containing polyimide precursor solution with a mass ratio of 15%; then the fluorine-containing polyimide precursor The liquid is covered on the silicon wafer by casting and scraping film, and the thickness of the precursor liquid is controlled to be about 500 microns;

[0046] Then, for example, the whole is placed in a blast drying oven to heat and solidify. First, keep it warm at 60°C for 40 minutes, and then use steps to raise the temperature to 90°C, 120°C, 150°C, 175°C, and 200°C. Each step is maintained for 40 minutes, so that The fluorine-containing polyimide precursor is cured, and the organic solvent is completely removed at the s...

Embodiment 3

[0049] Use an ethanol solution of gold nanowires with an average aspect ratio of about 800 to uniformly coat the silver nanowires on the silicon wafer with a squeegee tool, and the square resistance is set to 10Ω / sq, for example;

[0050] Next, dissolve the fluorine-containing polyimide powder in N,N-dimethyl sulfoxide to prepare a 6% fluorine-containing polyimide precursor solution by mass ratio; then the fluorine-containing polyimide precursor The liquid is covered on the silicon wafer by casting and scraping film, and the thickness of the precursor liquid is controlled to be about 700 microns;

[0051] Then, for example, the whole is placed in a blast drying oven to heat and solidify. First, heat it at 70°C for 40 minutes, and then use steps to raise the temperature to 90°C, 120°C, 150°C, 175°C, and 200°C. Each step is maintained for 40 minutes. Thus forming a fluorine-containing polyimide transparent film;

[0052] Finally, the film is peeled off from the silicon wafer to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thermal resistanceaaaaaaaaaa
thermal resistanceaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method for a flexible transparent conductive thin film with high thermal stability. The preparation method comprises the steps of step 1, uniformly coating the surface of a tidy and smooth target substrate with a one-dimension-structured conductive metal nanomaterial, and forming a conductive network structure; step 2, performing blade coating on the surface of the target substrate with the conductive network structure to form a precursor coating layer containing fluorinated polyimide; step 3, performing a curing process on the precursor coating layer containing fluorinated polyimide through a gradient temperature rise manner; and step 4, peeling off the cured fluorinated polyimide contained film layer from the target substrate to obtain the required finished product. The invention also discloses a corresponding flexible transparent conductive thin film product and characteristics of the product. Through the preparation method, the flexible transparent conductive thin film can be prepared in an efficient manner, and the quality control can be performed conveniently; and the prepared flexible transparent conductive thin film has the characteristics of low sheet resistance, high visible light transmittance, anti-ultraviolet property, high flexibility, low surface roughness, excellent high-temperature endurance and the like.

Description

technical field [0001] The invention belongs to the field of preparation of photoelectric thin film components, and more specifically relates to a preparation method of a flexible transparent conductive film with high thermal stability and a product thereof. Background technique [0002] With the increasing demand for integration and flexibility of optoelectronic devices, the application technology based on large-area printable flexible optoelectronic thin film devices has become one of the key research contents in the optoelectronic field. As one of the core components, the quality of the transparent flexible electrode has also become one of the key factors affecting the performance of printed solar cells, flexible displays, smart sensors and touch components. These devices require electrodes not only to have excellent and stable optoelectronic properties, but also to be thin, soft, low-cost, adaptable to mass production, and have good repeatable bending mechanical stabilit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01B5/14H01B13/00
CPCH01B5/14H01B13/00
Inventor 胡彬方云生方元行周军
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products