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Synthesis method of zno nanocrystals co-doped with in and ga

A synthesis method and nanocrystal technology, applied in the field of nanomaterials, can solve the problems of limited application scope, poor controllability and poor dispersion, and achieve the effects of strong controllability, low cost and good dispersion.

Active Publication Date: 2018-09-18
KUSN INFOVISION OPTOELECTRONICS
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Problems solved by technology

However, the above-mentioned preparation method has the following disadvantages: expensive equipment, complicated process, poor dispersion, poor controllability, uneven doping, etc., especially In and Ga co-doped ZnO nanocrystalline materials prepared by physical methods cannot be applied in low temperature solution process In optoelectronic devices such as solar cells and light-emitting diodes, it severely limits its application range

Method used

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  • Synthesis method of zno nanocrystals co-doped with in and ga
  • Synthesis method of zno nanocrystals co-doped with in and ga
  • Synthesis method of zno nanocrystals co-doped with in and ga

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preparation example Construction

[0023] The synthetic method of the ZnO nanocrystal of In, Ga co-doping comprises the following steps:

[0024] First, put fatty acid indium, gallium salt, fatty acid zinc and organic solvent in a reactor, stir evenly with magnetic force, heat up to 80-150°C, vacuumize to remove water vapor and oxygen in the reaction system, and then place the reaction system under an inert protective atmosphere. Heating to 200-350°C;

[0025] Next, quickly inject alcohol at a temperature of 100-200°C into the reactor, keep it warm for 30-120 minutes, and cool to room temperature;

[0026] Finally, the reaction mixture was centrifuged to obtain In and Ga co-doped ZnO nanocrystals.

[0027] Indium fatty acid can be indium stearate, indium myristate, indium myristate, indium isooctanoate, indium laurate, indium acetate, indium hexanoate, indium octanoate, indium gluconate, indium laurate, indium palmitate, or at least one of indium citrate.

[0028] The gallium salt may be at least one of gall...

Embodiment 1

[0037] First, weigh 0.1mmol indium laurate, 0.05mmol gallium myristate, 1mmol zinc stearate (that is, the molar ratio is 10:5:100) and 15ml octadecyl vinyl ether in a 50ml reaction flask, Under magnetic stirring, the temperature was raised to 140°C, and then the reaction flask was evacuated for 25 minutes to remove water vapor and oxygen in the reaction system, and the reaction solution was rapidly heated to 300°C under a protective atmosphere with a purity of 99.99% helium;

[0038] Secondly, the stearyl alcohol with a temperature of 180° C. was quickly injected into the reaction flask, and kept for 40 minutes, and the reaction solution was cooled to room temperature with a water bath;

[0039] Finally, the reaction mixture was centrifuged at 6000 rpm / min to obtain In and Ga co-doped ZnO nanocrystals.

[0040] After drying the obtained white In and Ga co-doped ZnO nanocrystal product, XRD (X-ray diffraction) test, TEM electron microscope photography, EDS test, and ultraviolet...

Embodiment 2

[0046]First, weigh 0.05mmol indium myristate, 0.05mmol gallium nitrate, 1mmol zinc isooctanoate (that is, the molar ratio is 5:5:100) and 15ml 1-eicosene in a 50ml reaction flask, and heat up to 150°C, then vacuumize the reaction flask for 30 minutes to remove water vapor and oxygen in the reaction system, and rapidly raise the temperature of the reaction solution to 260°C under a protective atmosphere with a purity of 99.99% helium;

[0047] Secondly, the pentadecyl alcohol with a temperature of 200° C. was quickly injected into the reaction flask, and kept warm for 70 minutes, and the reaction solution was cooled to room temperature with a water bath;

[0048] Finally, the reaction mixture was centrifuged at 4000 rpm / min to obtain In and Ga co-doped ZnO nanocrystals.

[0049] After measurement, the obtained In and Ga co-doped ZnO nanocrystals have a diameter of 7-11 nm.

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Abstract

The invention provides a method for synthesizing In and Ga co-doped ZnO nanometer crystal. The method includes steps of mixing indium fatty acid, gallium salt, zinc fatty acid and organic solvents with one another to obtain mixtures, arranging the mixtures in reactors, magnetically uniformly stirring the mixtures, heating the mixtures until the temperatures of the mixtures reach 80-150 DEG C, then vacuumizing the reactors to remove steam and oxygen in reaction systems and heating the mixtures in inert protective atmosphere until the temperatures of the mixtures reach 200-350 DEG C; quickly injecting alcohol with the temperature of 100-200 DEG C into the reactors, preserving heat for 30-120 minutes and cooling the reactors until the temperatures of the reactors reach the room temperature; centrifugally separating reaction mixtures to obtain the In and Ga co-doped ZnO nanometer crystal. The method has the advantages that the method is simple in preparation process, low in cost and good in repeatability, industrial production can be facilitated, the diameter of the In and Ga co-doped ZnO nanometer crystal is 5-15 nm, and the In and Ga co-doped ZnO nanometer crystal is good in dispersibility, high in controllability and uniform in doping.

Description

technical field [0001] The invention relates to the technical field of nanometer materials, in particular to a method for synthesizing In and Ga co-doped ZnO nanocrystals. Background technique [0002] ZnO (zinc oxide) is a II-VI compound semiconductor material with a band gap of 3.37eV at room temperature and an exciton binding energy of 60meV. It is ideal for semiconductor lasers, ultraviolet detectors, and blue-violet light at room temperature and higher temperatures Ideal material for Light Emitting Diodes (LEDs) etc. Due to the quantum confinement effect, surface effect, piezoelectric effect and other optical, electrical and piezoelectric properties of ZnO one-dimensional nanomaterials, ZnO has become a hot spot in the field of optoelectronic information research. [0003] The co-doping of In (indium) and Ga (gallium) in ZnO nanocrystals can realize the adjustment of its energy band between 3.3-3.7eV under the premise of maintaining the wurtzite structure, and at the s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/16C30B7/14
CPCC30B7/14C30B29/16
Inventor 金一政梁骁勇虞健王欣
Owner KUSN INFOVISION OPTOELECTRONICS
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